NEC UPA1722G

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1722
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
DESCRIPTION
The µPA1722 is N-Channel MOS Field Effect
8
Transistor designed for DC/DC converters and power
5
management applications of notebook computers.
1,2,3 ; Source
; Gate
4
5,6,7,8 ; Drain
FEATURES
• Low on-resistance
RDS(on)1 = 21.0 mΩ MAX. (VGS = 10 V, ID = 4.5 A)
0.05 MIN.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
4.4
5.37 MAX.
0.8
+0.10
–0.05
• Low Ciss: Ciss = 980 pF TYP.
6.0 ±0.3
4
0.15
RDS(on)3 = 32.0 mΩ MAX. (VGS = 4.0 V, ID = 4.5 A)
1.44
1
RDS(on)2 = 29.0 mΩ MAX. (VGS = 4.5 V, ID = 4.5 A)
1.8 MAX.
•
•
•
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
• ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1722G
Power SOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
ID(DC)
±9
A
ID(pulse)
±36
A
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Drain Current (pulse)
Note1
Total Power Dissipation (TA = 25°C)
Note2
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2
2. Mounted on ceramic substrate of 1200 mm x 2.2 mm
Remark
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G13890EJ1V0DS00 (1st edition)
Date Published November 1999 NS CP(K)
Printed in Japan
The mark • shows major revised points.
©
1998, 1999
µ PA1722
ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)
CHARACTERISTICS
•
SYMBOL
Drain to Source On-state Resistance
TYP.
MAX.
UNIT
VGS = 10 V, ID = 4.5 A
14.0
21.0
mΩ
RDS(on)2
VGS = 4.5 V, ID = 4.5 A
19.0
29.0
mΩ
RDS(on)3
VGS = 4.0 V, ID = 4.5 A
22.0
32.0
mΩ
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 4.5 A
5.0
9.2
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0 V
10
µA
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
µA
Input Capacitance
Ciss
VDS = 10 V
980
pF
Output Capacitance
Coss
VGS = 0 V
320
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
125
pF
Turn-on Delay Time
td(on)
ID = 4.5 A
20
ns
VGS(on) = 10 V
80
ns
td(off)
VDD = 15 V
60
ns
tf
RG = 10 Ω
30
ns
Rise Time
tr
Turn-off Delay Time
Fall Time
•
MIN.
RDS(on)1
Gate to Source Cut-off Voltage
•
TEST CONDITIONS
S
Total Gate Charge
QG
ID = 9 A
20
nC
Gate to Source Charge
QGS
VDD = 24 V
2.3
nC
Gate to Drain Charge
QGD
VGS = 10 V
6.0
nC
VF(S-D)
IF = 9 A, VGS = 0 V
0.84
V
Reverse Recovery Time
trr
IF = 9 A, VGS = 0 V
35
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/ µs
45
nC
Body Diode Forward Voltage
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
RL
RG
RG = 10 Ω
PG.
VGS
VGS
Wave Form
0
PG.
90 %
90 %
ID
VGS
0
ID
10 %
0 10 %
Wave Form
τ
τ = 1µ s
Duty Cycle ≤ 1 %
tr
td(on)
ton
RL
50 Ω
VDD
90 %
VDD
ID
2
VGS(on)
10 %
IG = 2 mA
td(off)
tf
toff
Data Sheet G13890EJ1V0DS00
µ PA1722
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
2.8
100
80
60
40
20
0
20
40
60
80
2.0
1.6
1.2
0.8
0.4
0
100 120 140 160
Mounted on ceramic
substrate of
1200 mm 2 × 2.2 mm
2.4
TA - Ambient Temperature - ˚C
20
40
60
80
100 120 140 160
TA - Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
Remark
ID(pulse)
10
Mounted on ceramicsubstrate of 1200 mm × 2.2 mm
s
ID(DC)
10
10
s
0µ
2
1m
RDS(on) Limited
(VGS=10V)
s
m
10
s
we
0m
Po
io
at
ip
iss
rD
1
n
TA = 25 ˚C
Single Pulse
0.2
0.02
0.1
d
ite
m
Li
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
rth(t) - Transient Thermal Resistance - ˚C/W
ID - Drain Current - A
•
Rth(ch-A) = 62.5˚C/W
100
10
1
0.1
0.01
100µ
Mounted on ceramic substrate
of 1200 mm2 x 2.2 mm
Single Pulse
TA = 25˚C
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G13890EJ1V0DS00
3
µ PA1722
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
100
36
Pulsed
ID - Drain Current - A
ID - Drain Current - A
32
10
TA = 150˚C
75˚C
25˚C
−25˚C
1
4.5 V
VGS = 10 V
Pulsed
4.0 V
28
24
20
16
12
8
4
0.1
0
VDS = 10 V
6
8
4
2
0
VGS - Gate to Source Voltage - V
100
10
TA = −25˚C
25˚C
75˚C
150˚C
VDS =10 V
Pulsed
0.1
0.01
0.1
1
10
100
RDS(on) - Drain to Source On-state Resistance - mΩ
|yfs| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1
0.8
0.4
1.2
1.6
2.0
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
Pulsed
90
80
70
ID = 9 A
4.5A
60
50
40
30
20
10
5
0
10
15
VGS - Gate to Source Voltage - V
4
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80
Pulsed
60
VGS = 4.0 V
40
4.5 V
20
0
0.1
10 V
1
10
100
VGS(off) - Gate to Source Cut-off Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
ID- Drain Current - A
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
5
VDS = 10 V
ID = 1 mA
4
3
2
1
0
−50
0
50
100
150
Tch - Channel Temperature - ˚C
ID - Drain Current - A
Data Sheet G13890EJ1V0DS00
200
100
50
IF - Diode Forward Current - A
ID = 4.5 A
40
VGS = 4.0 V
30
4.5 V
20
10 V
10
0
−50
0
50
100
VGS = 10 V
1
100
1000
Crss
0.1
1
10
1.0
1.2
1.4
di/dt = 100A /µs
VGS = 0 V
10
1
0.1
100
1
10
100
14
VGS
30
VDD = 24 V
15 V
6V
12
10
8
6
4
10
2
VGS - Gate to Source Voltage - V
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
VDS - Drain to Source Voltage - V
0.8
100
VDS - Drain to Source Voltage - V
ID = 9 A
VGS
4
0.6
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
Ciss
0
0.4
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Coss
0
Pulsed
0.2
VSD - Source to Drain Voltage - V
1000
20
0V
Tch - Channel Temperature - ˚C
VGS = 0 V
f = 1 MHz
10
0.01
10
0.1
0
150
10000
Ciss, Coss, Crss - Capacitance - pF
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
trr - Reverse Recovery Diode - ns
RDS(on) - Drain to Source On-state Resistance - mΩ
µ PA1722
8
12
16
20
24
28
0
32
QG - Gate Charge - nC
Data Sheet G13890EJ1V0DS00
5
µ PA1722
[MEMO]
6
Data Sheet G13890EJ1V0DS00
µ PA1722
[MEMO]
Data Sheet G13890EJ1V0DS00
7
µ PA1722
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8