DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1770 SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The µPA1770 is a P-channel MOS Field Effect Transistor designed for power management applications of portable machines. PART NUMBER PACKAGE µPA1770G Power SOP8 FEATURES • Dual chip type • Low on-resistance RDS(on)1 = 37 mΩ MAX. (VGS = –4.5 V, ID = –3.0 A) RDS(on)2 = 39 mΩ MAX. (VGS = –4.0 V, ID = –3.0 A) RDS(on)3 = 59 mΩ MAX. (VGS = –2.5 V, ID = –3.0 A) • Low input capacitance Ciss = 1300 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage VDSS –20 V Gate to Source Voltage VGSS ! 12 V Drain Current (DC) ID(DC) ! 6.0 A ID(pulse) ! 24 A Total Power Dissipation (1 unit) Note2 PT 0.40 W Total Power Dissipation (2 unit) Note2 PT 0.75 W Total Power Dissipation (1 unit) Note3 PT 1.7 W Total Power Dissipation (2 unit) Note3 PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Drain Current (pulse) ★ ★ Note1 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on FR4 Board of 1600 mm x 1.6 mm, Drain Pad size : 4.5 mm x 35 µm, TA = 25°C 2 ★ 2 2 3. Mounted on ceramic substrate of 1200 mm x 2.2 mm, TA = 25°C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G14055EJ1V0DS00 (1st edition) Date Published November 1999 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1999 µ PA1770 ★ ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = –4.5 V, ID = –3.0 A 28 37 mΩ RDS(on)2 VGS = –4.0 V, ID = –3.0 A 29.5 39 mΩ RDS(on)3 VGS = –2.5 V, ID = –3.0 A 44 59 mΩ VGS(off) VDS = –10 V, ID = 1 mA –0.5 –1.0 –1.5 V Forward Transfer Admittance | yfs | VDS = –10 V, ID = –3.0 A 5.0 11 Drain Leakage Current IDSS VDS = –20 V, VGS = 0 V –1 µA Gate to Source Leakage Current IGSS VGS = ! 12 V, VDS = 0 V ! 10 µA Input Capacitance Ciss VDS = –10 V 1300 pF Output Capacitance Coss VGS = 0 V 325 pF Reverse Transfer Capacitance Crss f = 1 MHz 155 pF Turn-on Delay Time td(on) ID = –3.0 A 25 ns VGS(on) = –4.5 V 110 ns VDD = –10 V 130 ns tf RG = 10 Ω 140 ns Total Gate Charge QG ID = –6.0 A 11 nC Gate to Source Charge QGS VDD = –16 V 2.0 nC Gate to Drain Charge QGD VGS = –4.5 V 4.0 nC VF(S-D) IF = 6.0 A, VGS = 0 V 0.8 V Reverse Recovery Time trr IF = 6.0 A, VGS = 0 V 60 ns Reverse Recovery Charge Qrr di/dt = 100 A / µs 40 nC Gate to Source Cut-off Voltage Rise Time tr Turn-off Delay Time td(off) Fall Time Body Diode Forward Voltage TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 PG. VDD ID Wave Form 90 % 90 % τ = 1µ s Duty Cycle ≤ 1 % 10 % 0 10 % tr td(on) ton IG = 2 mA RL 50 Ω VDD 90 % ID τ 2 VGS(on) 10 % ID VGS 0 S td(off) tf toff Data Sheet G14055EJ1V0DS00 µ PA1770 TYPICAL CHARACTERISTICS(TA = 25 °C, All terminals are connected.) TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1000 Rth(ch-A) = 73.5 ˚C/W 100 10 1 0.1 0.01 0.001 0.00001 Mounted on ceramic Single Pulse substrate of 1200 mm 2 × 2.2 mm Single Pulse , 1 unit 0.0001 0.001 0.01 0.1 1 10 100 1000 100 10 VDS = −10 V Pulsed TA = −50˚C TA = −25˚C TA = 25˚C TA = 75˚C TA = 125˚C TA = 150˚C 1 0 −0.1 −1 −10 −100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 Pulsed VGS = −2.5 V 60 VGS = −4.0 V 40 VGS = −4.5 V 20 0 −0.1 −1 −10 −100 VGS(off) - Gate to Source Cut-off Voltage - V |yfs| - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ PW - Pulse Width - s RDS(on) - Drain to Source On-state Resistance - mΩ ★ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 80 Pulsed 70 ID = −6.0 A 60 50 40 ID = −3.0 A 30 20 10 0 0 −2 −4 −6 −8 −10 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE −1.5 VDS = −10 V ID = 1 mA −1.0 −0.5 −0 −75 −50 −25 ID - Drain Current - A 0 25 50 75 100 125 150 Tch - Channel Temperature - ˚C Data Sheet G14055EJ1V0DS00 3 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100.0 100 VF(S−D) - Diode Forward Current - A 80.0 60.0 VGS = −2.5 V VGS = −4.0 V 40.0 VGS = −4.5 V 20.0 0.0 −50 ID = −3.0 A −25 0 25 50 75 100 VGS = −2.5 V 10 VGS = 0 V 1 0.1 0.01 0.00 125 150 0.50 Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS Coss 100 Crss 10 1 −0.1 VGS = 0 V f = 1 MHz −1 −10 td(on), tr, td(off), tf - Switching Time - ns 1000 Ciss 1000 td(off) 100 tf tr td(on) 10 VDD = −16 V VGS = −4.5V RG = 10 Ω 1 −0.1 −100 −1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS trr - Reverse Recovery Time - ns di/dt = 100 A/ns VGS = 0 V 1000 100 10 1 10 100 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 −30 −6 −25 −5 VGS −20 VDD = −16 V VDD = −10 V VDD = −4 V −15 −2 −5 0 0 −1 VDS 2 4 6 8 10 12 QG - Gate Charge - nC Data Sheet G14055EJ1V0DS00 −4 −3 −10 ID - Drain Current - A 4 −10 ID - Drain Current - A VDS - Drain to Source Voltage - V 10000 1.50 1.00 VSD - Source to Drain Voltage - V 10000 Ciss, Coss, Crss - Capacitance - pF Pulsed 14 0 16 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ µ PA1770 µ PA1770 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 2.8 100 80 60 40 20 Mounted on ceramic substrate of 1200 mm 2 × 2.2 mm 2.4 2 unit 2.0 1 unit 1.6 1.2 0.8 0.4 0 0 0 20 40 60 80 100 120 140 160 0 TA - Ambient Temperature - ˚C −30 PW TA = 25 ˚C Single Pulse ID - Drain Current - A 1 s m 10 PW m 0 10 s = (a RDS t V (o n) G L S = im −4 ite .5 d V) µs = = ID(DC) m s Po we −1 100 120 140 160 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed VGS = −4.5 V −20 VGS = −4.0 V −15 VGS = −2.5 V −10 d ite Lim −0.1 0 80 −5 n Mounted on ceramic substrate of 2 1200 mm × 2.2 mm −0.1 1unit tio ipa iss rD ID - Drain Current - A 0 10 PW PW −10 60 −25 = ID(pulse) 40 TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA −100 20 −1 −10 −100 −0 −0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A −100 VDS = −10 V Pulsed −10 −1 −0.1 TA = 150˚C TA = 125˚C TA = 75˚C −0.01 −0.001 0 TA = 25˚C TA = −25˚C TA = −50˚C −1 −2 −3 VGS - Gate to Source Voltage - V Data Sheet G14055EJ1V0DS00 5 µ PA1770 PACKAGE DRAWING (Unit : mm) Power SOP8 8 5 EQUIVALENT CIRCUIT 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 (1/2 circuit) 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 4.4 0.15 Remark 6 4 5.37 MAX. 1.27 0.78 MAX. 0.40 +0.10 –0.05 Body Diode Gate 6.0 ±0.3 0.8 Gate Protection Diode +0.10 –0.05 1.44 0.05 MIN. 1.8 MAX. 1 Drain Source 0.5 ±0.2 0.10 0.12 M The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet G14055EJ1V0DS00 µ PA1770 [MEMO] Data Sheet G14055EJ1V0DS00 7 µ PA1770 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8