DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1720 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The µ PA1720 is N-Channel MOS Field Effect Transistor designed for DC / DC Converters and power management application of notebook computers. FEATURES • Low On-Resistance RDS(on)1 = 25.0 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 33.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)3 = 38.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) • Low Ciss : Ciss = 800 pF TYP. • Built-in G-S Protection Diode • Small and Surface Mount Package (Power SOP8) ORDERING INFORMATION PART NUMBER PACKAGE µ PA1720G Power SOP8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.) Drain to Source Voltage (VGS = 0) VDSS 30 V Gate to Source Voltage (VDS = 0) VGSS ±20 V Drain Current (DC) ID(DC) ±8 A ID(pulse) ±32 A Drain Current (Pulse) Note1 Total Power Dissipation (TA = 25 °C) Note2 PT 2.0 W Single Avalanche Current Note3 IAS 8.0 A Single Avalanche Energy Note3 EAS 6.4 mJ Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to + 150 °C Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm 3. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G13888EJ2V0DS00 (2nd edition) Date Published March 2000 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1998, 1999 µ PA1720 ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 4.0 A 20.0 25.0 mΩ RDS(on)2 VGS = 4.5 V, ID = 4.0 A 25.5 33.0 mΩ RDS(on)3 VGS = 4.0 V, ID = 4.0 A 29.0 38.0 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 4.0 A 3.0 7.0 Drain Leakage Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±16 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 800 pF Output Capacitance Coss VGS = 0 V 250 pF Reverse Transfer Capacitance Crss f = 1 MHz 96 pF Turn-on Delay Time td(on) ID = 4.0 A 20 ns VGS(on) = 10 V 80 ns td(off) VDD = 15 V 40 ns tf RG = 10 Ω 40 ns Gate to Source Cut-off Voltage Rise Time tr Turn-off Delay Time Fall Time S Total Gate Charge QG ID = 8 A 14 nC Gate to Source Charge QGS VDD = 24 V 2.3 nC Gate to Drain Charge QGD VGS = 10 V 3.6 nC VF(S-D) IF = 8 A, VGS = 0 V 0.86 V Reverse Recovery Time trr IF = 8 A, VGS = 0 V 30 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 40 nC Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS(on) 10 % 90 % VDD ID 90 % 90 % IAS ID VGS 0 BVDSS ID VDS ID τ VDD Starting Tch τ = 1 µs Duty Cycle ≤ 1 % TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10 % 10 % Wave Form RL VDD Data Sheet G13888EJ2V0DS00 td(on) tr ton td(off) tf toff µ PA1720 TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 2.8 100 80 60 40 20 0 20 40 60 80 Mounted on ceramic substrate of 1200 mm2 × 2.2 mm 2.4 2.0 1.6 1.2 0.8 0.4 0 100 120 140 160 TA - Ambient Temperature - ˚C 20 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 0 µs 1 1200 mm × 2.2 mm m 2 s s m 10 0 rD m s iss n io at ip 1 Remark Mounted on ceramic substrate of 10 = we RD (V S(on) GS L = imit 10 ed V) 10 = = PW Po m Li 0.1 d 0.1 0.01 ite TA = 25 ˚C Single Pulse 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A = PW ID(DC) = 8 A PW 10 PW ID(DC) = 32 A Rth(ch-A) = 62.5 ˚C/W 10 1 0.1 0.01 0.0001 Mounted on ceramic substrate of 1200 mm2 x 2.2 mm Single Pulse 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - s Data Sheet G13888EJ2V0DS00 3 µ PA1720 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS Pulsed Pulsed ID - Drain Current - A ID - Drain Current - A 100 10 TA = 150˚C 75˚C 25˚C −25˚C 1 VDS = 10 V 0.1 0 1 2 3 4 5 30 VGS = 10 V 4.5 V 4.0 V 20 10 0 0.0 6 100 TA = −25˚C 25˚C 75˚C 150˚C 1 0.1 0.01 VDS =10 V Pulsed 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID- Drain Current - A ★ Pulsed 80 VGS = 4.0 V 60 4.5 V 10 V 20 0 0.1 1 10 100 1.6 Pulsed 80 ID = 4 A 8A 60 40 20 0 0 5 10 15 VGS - Gate to Source Voltage - V 100 3.0 VDS = 10 V ID = 1 mA 2.0 1.0 0.0 −50 0 50 100 Tch - Channel Temperature - ˚C ID - Drain Current - A 4 1.2 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 100 40 0.8 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cut-off Voltage - V |yfs| - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - mΩ VGS - Gate to Source Voltage - V 10 0.4 VDS - Drain to Source Voltage - V Data Sheet G13888EJ2V0DS00 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50 ISD - Diode Forward Current - A 100 40 VGS = 4.0 V 30 4.5 V 10 V 20 10 -50 0 50 100 VGS = 10 V 0V 10 1 0.1 0.0 150 0.5 1.0 1.5 Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT 10000 Ciss, Coss, Crss - Capacitance - pF SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 VGS = 0 V f = 1 MHz 1000 trr - Reverse Recovery Time - ns RDS(on) - Drain to Source On-state Resistance - mΩ µ PA1720 Ciss Coss 100 Crss 10 0.01 0.1 1 10 100 10 1 0.1 100 di / dt = 100 A /µ s VGS = 0 V 1 10 100 IF - Drain Current - A VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 14 30 12 VGS VDD = 24 V 15 V 6V 20 10 8 6 4 10 2 ID = 8 A VDS 0 0 5 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V 40 0 10 15 20 25 QG - Gate Charge - nC Data Sheet G13888EJ2V0DS00 5 µ PA1720 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 10 RG = 25 Ω VDD = 15 V VGS = 20 V 0 V Starting Tch = 25˚C IAS = 8 A EAS = 6.4 mJ 1 10µ 100µ 1m L - Inductive Load - H 6 10m 120 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 SINGLE AVALANCHE ENERGY DERATING FACTOR RG = 25 Ω VDD = 15 V VGS = 20 V IAS 8 A 100 0V 80 60 40 20 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C Data Sheet G13888EJ2V0DS00 µ PA1720 PACKAGE DRAWING (Unit : mm) Power SOP8 8 EQUIVALENT CIRCUIT 5 1 2, 3 4 5, 6, 7, 8 ; ; ; ; Non Connect Source Gate Drain Drain Body Diode Gate 6.0 ±0.3 4 4.4 5.37 Max. 0.8 0.15 +0.10 –0.05 1.44 0.05 Min. 1.8 Max. 1 Remark 1.27 0.40 0.78 Max. +0.10 –0.05 Gate Protection Diode Source 0.5 ±0.2 0.10 0.12 M The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage Exceeding the rated voltage may be applied to this device. Data Sheet G13888EJ2V0DS00 7 µ PA1720 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8