DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1756 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. PACKAGE DRAWING (Unit : mm) 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 FEATURES 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 PACKAGE µ PA1756G Power SOP8 6.0 ±0.3 4 4.4 0.8 0.15 +0.10 –0.05 5.37 Max. 0.05 Min. ORDERING INFORMATION PART NUMBER 1.44 1 1.8 Max. • Dual MOS FET chips in small package • 2.5-V gate drive type and low on-resistance RDS(on)1 = 30 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 40 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A) • Low Ciss Ciss = 800 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 1.27 0.40 0.5 ±0.2 0.10 0.78 Max. +0.10 –0.05 0.12 M ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS ±12.0 V Drain Current (DC) ID(DC) ±6.0 A ID(pulse) ±24 A Total Power Dissipation (1 unit)Note2 PT 1.7 W Total Power Dissipation (2 unit)Note2 PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Current (Pulse)Note1 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1 % 2. TA = 25 °C, Mounted on ceramic substrate of 2000 mm2 x 1.1 mm The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D12909EJ1V0DS00 (1st edition) Date Published February 1999 NS CP (K) Printed in Japan © 1999 µ PA1756 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 4.5 V, ID = 3.0 A 20.0 30 mΩ RDS(on)2 VGS = 2.5 V, ID = 3.0 A 25.8 40 mΩ VGS(off) VDS = 10 V, ID = 1.0 mA 0.5 0.7 1.5 V 4.0 12 Gate to Source Cut-off Voltage Forward Transfer Admittance | yfs | VDS = 10 V, ID = 3.0 A Drain Leakage Current IDSS VDS = 20 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±12.0 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 800 pF Output Capacitance Coss VGS = 0 V 360 pF Reverse Transfer Capacitance Crss f = 1 MHz 70 pF Turn-on Delay Time td(on) ID = 3.0A 110 ns VGS(on) = 4.0 V 425 ns td(off) VDD = 10 V 1050 ns tf RG = 10 Ω 1200 ns Total Gate Charge QG ID = 6.0 A 11 nC Gate to Source Charge QGS VDD = 16 V 2.0 nC Gate to Drain Charge QGD VGS = 4.0 V 4.6 nC IF = 6.0 A, VGS = 0 V 0.8 V Rise Time tr Turn-off Delay Time Fall Time Body Diode Forward Voltage VF(S-D) TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 PG. VDD ID 90 % 90 % 10 % 0 10 % Wave Form τ = 1µ s Duty Cycle ≤ 1 % tr td(on) ton IG = 2 mA RL 50 Ω VDD 90 % ID τ 2 VGS(on) 10 % ID VGS 0 S td(off) tf toff Data Sheet D12909EJ1V0DS00 µ PA1756 TYPICAL CHARACTERISTICS (TA = 25 °C) TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 100 10 1 0.1 0.01 0.001 Mounted on ceramic substrate of 2000mm 2 x 1.1mm Single Pulse , 1 unit 10µ 100 µ 1m 10 m 100 m 1 10 100 1 000 100 VDS=10V Pulsed TA = -50 ˚C -25 ˚C 25 ˚C 10 TA = 75 ˚C 125 ˚C 150 ˚C 1 0.1 1 10 100 RDS(on) - Drain to Source On-State Resistance - mΩ ID- Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 60 40 VGS=2.5V VGS=4V 20 0 VGS=4.5V 1 10 100 VGS(off) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - mΩ PW - Pulse Width - S DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 75 Pulsed 50 25 ID=3A 2 0 4 8 6 10 12 14 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 1.0 VDS = 10 V ID = 1 mA 0.5 0 ID - Drain Current - A - 50 0 50 100 150 Tch - Channel Temperature -˚C Data Sheet D12909EJ1V0DS00 3 RDS(on) - Drain to Source On-State Resistance - mΩ µ PA1756 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed ISD - Diode Forward Current - A VGS=2.5V 40 VGS=4V 30 VGS=4.5V 20 10 100 VGS=4V 10 VGS=2.5V VGS=0V 1 0.1 ID= 3A 0 0 - 50 50 100 0 150 Tch - Channel Temperature -˚C td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS 10 000 VGS = 0 V f = 1 MHz 1 000 Ciss Coss 100 Crss 10 0.1 1 10 100 tf 1 000 td(on) 10 0.1 4 VGS 10 2 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V 6 VDD=16V 10V 4V VDS 0 4 8 12 0 16 QG - Gate Charge - nC 4 tr 1 VDD =10V VGS(on) = 4V RG =10Ω 10 100 ID - Drain Current - A DYNAMIC INPUT/OUTPUT CHARACTERISTICS 8 40 ID= 6A 20 td(off) 100 VDS - Drain to Source Voltage - V 30 1.5 1.0 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000 0.5 Data Sheet D12909EJ1V0DS00 µ PA1756 80 60 40 20 20 40 60 80 100 120 140 160 PT - Total Power Dissipation - W/package 100 0 2.8 Mounted on ceramic substrate of 2000mm 2 x 1.1mm 2.4 2.0 2 unit 1 unit 1.6 1.2 0.8 0.4 0 20 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 ID - Drain Current - A TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on ceramic substrate of 2000mm x 1.1mm2 1unit d ite V) ID(pulse)=24A Lim 4.5 n) o = ( S S RD t VG (a ID(DC)=6A 10 1 Pulsed 25 ID - Drain Current - A dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA m s 10 m s 10 0m Po s we rD iss 1 DC ipa tio n Lim ite VGS=4V 20 VGS=4.5V 15 10 VGS=2.5V 5 d TA = 25 ˚C Single Pulse 0.1 0.1 1 10 100 0 VDS - Drain to Source Voltage - V 0.2 0.4 0.6 0.8 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 100 Pulsed 10 TA=150˚C 125˚C 1 75˚C TA=25˚C -25˚C -50˚C 0.1 0 1 2 VDS=10V 3 VGS - Gate to Source Voltage - V Data Sheet D12909EJ1V0DS00 5 µ PA1756 [MEMO] 6 Data Sheet D12909EJ1V0DS00 µ PA1756 [MEMO] Data Sheet D12909EJ1V0DS00 7 µ PA1756 • The information in this document is subject to change without notice. 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