DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1760 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING (Unit : mm) The µPA1760 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management 8 5 application of notebook computers. 1 2 7, 8 ; Source1 ; Gate1 ; Drain1 FEATURES 3 4 5, 6 ; Source2 ; Gate2 ; Drain2 • Dual Chip Type RDS(on)3 = 42.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) 0.05 Min. RDS(on)2 = 36.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) 4.4 0.8 +0.10 –0.05 ★ 6.0 ±0.3 4 5.37 Max. 0.15 RDS(on)1 = 26.0 mΩ MAX. (VGS = 10 V, ID = 4.0 A) 1.8 Max. ★ ★ 1.44 1 • Low On-Resistance • Low Ciss : Ciss = 760 pF TYP. 1.27 0.40 0.5 ±0.2 0.10 0.78 Max. +0.10 –0.05 0.12 M • Built-in G-S Protection Diode • Small and Surface Mount Package (Power SOP8) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) ID(DC) ±8.0 A ID(pulse) ±32 A PT 1.7 W PT 2.0 W Tch 150 °C Drain Current (Pulse) Note1 Total Power Dissipation (1 unit) Note2 Total Power Dissipation (2 unit) Note2 Channel Temperature Storage Temperature ★ ★ Tstg –55 to + 150 °C Single Avalanche Current Note3 IAS 8 A Single Avalanche Energy Note3 EAS 6.4 mJ EQUIVALENT CIRCUIT (1/2 Circuit) Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % ★ ★ 2 2. TA = 25 °C, Mounted on ceramic substrate of 2000 mm x 1.6 mm 3. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage Exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G13891EJ1V0DS00 (1st edition) Date Published November 1999 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1998,1999 µPA1760 ★ ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 4.0 A 20.5 26.0 mΩ RDS(on)2 VGS = 4.5 V, ID = 4.0 A 27.0 36.0 mΩ RDS(on)3 VGS = 4.0 V, ID = 4.0 A 31.0 42.0 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.1 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 4.0 A 3.0 7.5 Drain Leakage Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±16 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 760 pF Output Capacitance Coss VGS = 0 V 250 pF Reverse Transfer Capacitance Crss f = 1 MHz 95 pF Turn-on Delay Time td(on) ID = 4.0 A 20 ns VGS(on) = 10 V 140 ns td(off) VDD = 15 V 50 ns tf RG = 10 Ω 30 ns Total Gate Charge QG ID = 8.0 A 14 nC Gate to Source Charge QGS VDD = 24 V 2.0 nC Gate to Drain Charge QGD VGS = 10 V 5.0 nC VF(S-D) IF = 8.0 A, VGS = 0 V 0.86 V Reverse Recovery Time trr IF = 8.0 A, VGS = 0 V 30 ns Reverse Recovery Charge Qrr di/dt = 100A/µs 20 nC Gate to Source Cut-off Voltage Rise Time tr Turn-off Delay Time Fall Time Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω S VGS RL RG RG = 10 Ω PG. VDD VGS Wave Form 0 VGS(on) 10 % 90 % VDD ID 90 % 90 % BVDSS IAS ID VGS 0 ID VDS ID τ VDD Starting Tch τ = 1 µs Duty Cycle ≤ 1 % TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10 % 10 % Wave Form RL VDD Data Sheet G13891EJ1V0DS00 td(on) tr ton td(off) tf toff µPA1760 ★ TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 Pulsed VGS=10 V Pulsed VGS=4.5 V ID - Drain Current - A ID - Drain Current - A 30 10 TA=125˚C TA=75˚C 1 TA=25˚C TA=−25˚C 25 VGS=4.0 V 20 15 10 5 VDS = 10 V 0.1 1 2 3 4 0 0.0 5 10 TA =75˚C TA =125˚C 0.1 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID- Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 80 VGS=4.0V 60 VGS=4.5V 40 20 0.1 VGS=10V 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ TA = −25˚C TA = 25˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 Pulsed 90 ID=4 A 80 ID=8 A 70 60 50 40 30 20 10 0 5 0 15 10 VGS - Gate to Source Voltage - V VGS(off) - Gate to Source Cut-off Voltage - V |yfs| - Forward Transfer Admittance - S VDS=10V Pulsed 1 1.6 1.2 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 0.8 0.4 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3.0 VDS=10 V ID=1 mA 2.0 1.0 − 50 0 50 100 150 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet G13891EJ1V0DS00 3 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50 VGS=4.5V 30 VGS=10V 20 10 − 50 0 50 100 10 1 0.1 0.0 150 1000 Ciss Coss 100 Crss 10 10 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 100 10 1.4 tf td(off) td(on) 10 1 0.1 1 10 VDS = 15 V VGS = 10 V RG = 10 Ω 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 40 ID = 8 A 14 35 12 30 25 20 VDD=24 V VDD=15 V VDD=6 V VGS 10 8 15 6 10 4 100 5 0 0 2 VDS 5 10 15 20 QG - Gate Charge - nC ID - Drain Current - A 4 1.2 ID - Drain Current - A di/dt = 100 A/µs VGS = 0 V 1 1.0 100 100 REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 0.8 tr VDS - Drain to Source Voltage - V 1000 0.6 1000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 0.4 SWITCHING CHARACTERISTICS VGS = 0 V f = 1 MHz 1 0.2 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 0.1 VGS=10V VGS=0V Tch - Channel Temperature - ˚C 10000 Pulsed Data Sheet G13891EJ1V0DS00 25 0 30 VGS - Gate to Source Voltage - V 40 100 IF - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ µPA1760 µPA1760 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W/package dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 20 40 60 80 100 120 140 160 2.8 Mounted on ceramic substrate of 2000 mm2×1.6 mm 2.4 2.0 2 unit 1 unit 1.6 1.2 0.8 0.4 0 20 TA - Ambient Temperature - ˚C 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA D R 10 Mounted on ceramic substrate of 2000mm2×1.6mm, 1 unit ID(pulse) d ite Lim V) n) 0 o S( = 1 PW S G (V PW ID(DC) Po we r PW =1 =1 0 0µ s s m s ipa tio n Lim ite d TA = 25 ˚C Single Pulse 0.1 0.1 m s =1 00 Di PW =1 0m ss 1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A 100 1 000 Rth(ch-A) = 73.5˚C/W 100 10 1 0.1 0.01 100 µ Mounted on ceramic substrate of 2000mm2 × 1.6mm Single Pulse, 1 unit, TA=25˚C 1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s Data Sheet G13891EJ1V0DS00 5 µPA1760 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 10 RG = 25 VDD = 15 V VGS = 20 V 0 V Starting Tch = 25˚C IAS = 8 A EAS = 6.4 mJ 1 10 100 1m 120 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 SINGLE AVALANCHE ENERGY DERATING FACTOR 100 0V 80 60 40 20 10m L - Inductive Load - H 6 RG = 25 VDD = 15 V VGS = 20 V IAS 8 A 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C Data Sheet G13891EJ1V0DS00 µPA1760 [MEMO] Data Sheet G13891EJ1V0DS00 7 µPA1760 • The information in this document is subject to change without notice. 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