DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3062 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3062 TO-220AB FEATURES 2SK3062-S TO-262 • Low on-state resistance 2SK3062-ZJ TO-263 designed for high current switching applications. RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 5200 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS(AC) ±20 V Gate to Source Voltage (VDS = 0 V) VGSS(DC) +20, −10 V ID(DC) ±70 A ID(pulse) ±280 A Total Power Dissipation (TC = 25°C) PT 100 W Total Power Dissipation (TA = 25°C) PT 1.5 W Channel Temperature Tch 150 °C Drain Current (DC) Drain Current (Pulse) Note1 Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 35 A Single Avalanche Energy Note2 EAS 122.5 mJ Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE Channel to Case Rth(ch-C) 1.25 °C/W Channel to Ambient Rth(ch-A) 83.3 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13101EJ1V0DS00 (1st edition) Date Published April 1999 NS CP(K) Printed in Japan © 1998,1999 2SK3062 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 35 A 6.3 8.5 mΩ RDS(on)2 VGS = 4.0 V, ID = 35 A 8.2 12 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.5 2.0 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 35 A 20 87 Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 5200 pF Output Capacitance Coss VGS = 0 V 1300 pF Reverse Transfer Capacitance Crss f = 1 MHz 480 pF Turn-on Delay Time td(on) ID = 35 A 75 ns VGS(on) = 10 V 1150 ns td(off) VDD = 30 V 360 ns tf RG = 10 Ω 480 ns Total Gate Charge QG ID = 70 A 95 nC Gate to Source Charge QGS VDD = 48 V 13 nC Gate to Drain Charge QGD VGS(on) = 10 V 30 nC Gate to Source Cut-off Voltage Rise Time tr Turn-off Delay Time Fall Time Body Diode Forward Voltage S VF(S-D) IF = 70 A, VGS = 0 V 0.97 V Reverse Recovery Time trr IF = 70 A, VGS = 0 V 70 ns Reverse Recovery Charge Qrr di/dt = 100 A / µs 140 nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL RG RG = 10 Ω PG. VDD VGS Wave Form 0 VGS(on) 10 % 90 % VDD ID 90 % 90 % BVDSS IAS ID VGS 0 ID VDS ID τ VDD Starting Tch τ = 1 µs Duty Cycle ≤ 1 % TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10 % 10 % Wave Form RL VDD Data Sheet D13101EJ1V0DS00 td(on) tr ton td(off) tf toff 2SK3062 TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 25 50 75 120 100 80 60 40 20 0 100 125 150 175 200 25 50 75 100 125 150 175 200 TC - Case Temperature - °C TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1000 Pulsed s 0µ s 1m Lim s S( DC RD Di 10 m 0m s ipa s tio n Lim ite d ss 10 TC = 25˚C Single Pulse 1 0.1 0µ 10 ite ) on =1 ID - Drain Current - A ID - Drain Current - A 1 S= VG @ ( d ID(DC)=70 A 100 PW ID(pulse)=280 A ) 0V 1 10 10 100 VGS = 10 V 200 VGS = 4.0 V 100 0 1 2 3 4 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 100 10 TA = 125˚C 75˚C 25˚C −25˚C 1 0.1 0 1 2 3 Pulsed VDS = 10 V 4 5 VGS - Gate to Source Voltage - V Data Sheet D13101EJ1V0DS00 3 2SK3062 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1000 100 Rth(ch-A)= 83.3 ˚C/W 10 Rth(ch-C)= 1.25 ˚C/W 1 0.1 0.01 TC = 25˚C Single Pulse 0.001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 100 Tch = −25˚C 25˚C 75˚C 125˚C 10 1 0.1 1.0 VDS = 10 V Pulsed 100 10 RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 20 10 ID = 35 A 0 Pulsed 30 20 VGS = 4.0 V 10 10 V 0 0.1 1 10 100 10 15 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA 2.0 1.5 1.0 0.5 0 ID - Drain Current - A 4 5 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ PW - Pulse Width - s −50 0 50 100 150 Tch - Channel Temperature - ˚C Data Sheet D13101EJ1V0DS00 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE VGS = 4.0 V 15 10 V 10 5 Ciss, Coss, Crss - Capacitance - nF 0V 10 1 0.1 ID = 35 A −50 0 50 100 Pulsed 0 150 0.5 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS VGS = 0 V f = 1 MHz 10 Ciss 1 Coss Crss 1 10 VDS = 30 V VGS = 10 V RG = 10 Ω 10000 100 tr 1000 tf td(off) td(on) 100 10 1 0.1 VDS - Drain to Source Voltage - V di/dt = 100 A /µ s VGS = 0 V 100 10 1 10 100 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 1000 10 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 1.5 1 Tch - Channel Temperature - ˚C 100 0.1 0.1 VGS = 4.0 V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 16 ID = 70 A 14 60 12 VDD = 12 V 30 V 48 V 40 10 8 6 4 20 2 0 25 50 75 100 VGS - Gate to Source Voltage - V 0 100 ISD - Diode Forward Current - A 20 SOURCE TO DRAIN DIODE FORWARD VOLTAGE td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3062 0 QG - Gate Charge - nC IF - Drain Current - A Data Sheet D13101EJ1V0DS00 5 2SK3062 SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 160 IAS = 35 A EAS 10 =1 22. 5m 120 100 80 60 40 20 1m L - Inductive Load - H 6 J 1.0 RG = 25 Ω VDD = 30 V VGS = 20 V → 0 V Starting Tch = 25 °C 0.1 10 µ 100 µ VDD = 30 V RG = 25 Ω VGS = 20 V → 0 V IAS ≤ 35 A 140 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 10 m 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C Data Sheet D13101EJ1V0DS00 2SK3062 PACKAGE DRAWINGS (Unit : mm) 4.8 MAX. φ 3.6±0.2 (10) 1.3±0.2 10.0 4.8 MAX. 1.3±0.2 1 1 2 3 3 12.7 MIN. 6.0 MAX. 1.3±0.2 1.3±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP. 2 12.7 MIN. 4 15.5 MAX. 5.9 MIN. 4 8.5±0.2 3.0±0.3 10.6 MAX. 2)TO-262 (MP-25 Fin Cut) 1.0±0.5 1)TO-220AB (MP-25) 0.5±0.2 2.8±0.2 2.54 TYP. 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3)TO-263 (MP-25ZJ) 4.8 MAX. (10) 1.3±0.2 EQUIVALENT CIRCUIT 5.7±0.4 1.4±0.2 0.7±0.2 2 3 2.54 TYP. 2.8±0.2 2.54 TYP. 1 Remark Drain 8.5±0.2 1.0±0.5 4 (0 ) .5R ) .8R (0 Body Diode Gate 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) Gate Protection Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D13101EJ1V0DS00 7 2SK3062 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8