DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC324 LOW POWER QUAD OPERATIONAL AMPLIFIER DESCRIPTION FEATURES The µPC324 is a quad operational amplifier which is • Internal frequency compensation designed to operate from a single power supply over a • Wide output voltage swing V– to V+–1.5 V wide range of voltages. • Common Mode input voltage range includes V– Operation from split power supplies is also possible and the power supply current • Wide supply range drain is very low. Further advantage, the input common- 3 V to 30 V (Single) mode voltage can also swing to ground in the linear ±1.5 V to ±15 V (Split) mode. • Output short circuit protection EQUIVALENT CIRCUIT (1/4 Circuit) PIN CONFIGURATION (Top View) 100 µ A 6 µA 6 µA OUT1 1 Q5 II Q1 Q2 Q3 µ PC324C, 324G2 V+ Q4 CC Q6 II1 2 Q7 IN OUTPUT Q13 Q10 Q8 Q9 1 –+ 4 +– IN1 3 RSC Q11 14 OUT4 + V 12 IN4 11 V– 4 IN2 5 Q12 50 µA II2 6 V– 13 II4 10 IN3 –+ 2 +– 3 OUT2 7 9 II3 8 OUT3 ORDERING INFORMATION Part Number Package µPC324C 14-pin plastic DIP (300 mil) µPC324G2 14-pin plastic SOP (225 mil) The information in this document is subject to change without notice. Document No. G11763EJ3V0DS00 (3rd edition) (Previous No. IC-1985) Date Published April 1997 N Printed in Japan The mark shows major revised points. © 1997 µPC324 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter + Voltage between V and V Symbol – + Note 1 V –V Differential Input Voltage Ratings – Unit –0.3 to +32 V VID ±32 V Input Voltage Note 2 VI V––0.3 to V–+32 V Output Voltage Note 3 VO V––0.3 to V++0.3 V Note 4 PT Power Dissipation C Package G2 Package Note 5 Output Short Circuit Duration Note 6 570 mW 550 mW Indefinite sec Operating Ambient Temperature TA –20 to +80 °C Storage Temperature Tstg –55 to + 125 °C Notes 1. Reverse connection of supply voltage can cause destruction. 2. The input voltage should be allowed to input without damage or destruction independent of the magnitude of V+. Either input signal should not be allowed to go negative by more than 0.3 V. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. 3. This specification is the voltage which should be allowed to supply to the output terminal from external without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics. 4. Thermal derating factor is –7.6 mW/°C when operating ambient temperature is higher than 50 °C. 5. Thermal derating factor is –5.5 mW/°C when operating ambient temperature is higher than 25 °C. 6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and Note 5. RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage (Split) – Supply Voltage (V = GND) Symbol MIN. MAX. Unit V± ±1.5 ±15 V 3 30 V V + TYP. ELECTRICAL CHARACTERISTICS (TA = 25 °C, V+ = 5 V, V– = GND) Parameter Symbol Input Offset Voltage VIO Input Offset Current IIO Input Bias Current Note 7 Conditions MIN. RS = 0 Ω IB Large Single Voltage Gain AV RL ≥ 2 kΩ Supply Current ICC RL = ∞, IO = 0 A, All Amplifiers 25 TYP. ±2 ±7 mV ±50 nA 45 250 100 CMR 65 85 SVR 65 100 Output Current (SOURCE) Output Current (SINK) VO RL = 2 kΩ (Connect to GND) VICM + – 2 mA dB dB + 0 V – 1.5 V 0 V+ – 1.5 V IO SOURCE VIN = +1 V, VIN = 0 V 20 40 mA IO SINK VIN – = +1 V, VIN+ = 0 V 10 20 mA 50 µA 120 dB – + VIN = +1 V, VIN = 0 V, VO = 200 mV Channel Separation nA V/mV 1.0 Supply Voltage Rejection Ratio Common Mode Input Voltage Range Unit ±5 Common Mode Rejection Ratio Output Voltage Swing MAX. f = 1 kHz to 20 kHz 12 Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage. 2 µPC324 TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25 °C, TYP.) POWER DISSIPATION SUPPLY CURRENT 1000 4 V + ICC 324C 600 3 ICC - Supply Current - mA PT - Total Power Dissipation - mW A 800 324G2 400 – + 2 TA = 0 to 70 °C 1 200 TA = –20 °C 0 20 40 60 80 100 0 10 20 30 INPUT OFFSET VOLTAGE INPUT OFFSET VOLTAGE 3 5 V+ = 5 V 2 TA = 25 °C 1 VIO - Input Offset Voltage - mV 4 VIO - Input Offset Voltage - mV 40 V+ - Supply Voltage - V (V– = GND) TA - Operating Ambient Temperature - °C 3 2 1 0 –1 –2 –3 0 0 10 20 30 V+ - Supply Voltage - V (V– = GND) –4 –50 40 100 75 50 TA = +25 °C 25 IB - Input Bias Current - nA 80 IB - Input Bias Current - nA 100 50 INPUT BIAS CURRENT INPUT BIAS CURRENT 100 0 0 TA - Operating Ambient Temperature - °C V+ = +15 V V– = GND 60 40 20 10 20 30 40 V+ - Supply Voltage - V (V– = GND) 0 –50 0 50 100 TA - Operating Ambient Temperature - °C 3 µPC324 OUTPUT SINK CURRENT LIMIT OUTPUT SOURCE CURRENT LIMIT 5 10 V+ ∆VO - Output Voltage to V+ - V VO - Output Voltage - V V+ = 15 V 1.0 V+ 0.1 V+/2 IO SINK – + 0.01 0.01 0.1 1.0 VO 10 V+/2 4 2 1 IO SINK - Output Sink Current - mA 0.1 1.0 10 100 IO SOURCE - Output Source Current - mA OUTPUT SHORT CIRCUIT CURRENT OPEN LOOP FREQUENCY RESPONSE 140 70 10 MΩ – AV - Open Loop Voltage Grain - dB IO SHORT - Output Short Circuit Current - mA IO SOURCE 3 0 0.01 100 ∆VO + – IO SHORT 60 + 50 40 30 –20 120 0.1 µF 100 V+ – VIN VO + V+/2 80 60 V+ = 30 V 40 V+ = 10 to 15 V 20 0 0 40 20 60 80 TA - Operating Ambient Temperature - °C 1 10 100 1k 10 k 100 k 1 M 10 M f - Frequency - Hz OPEN LOOP VOLTAGE GAIN LARGE SIGNAL FREQUENCY RESPONSE 20 160 Vom - Output Voltage Swing - Vp-p 100 kΩ AV - Open Voltage Gain - dB RL = 20 kΩ 120 RL = 2 kΩ 80 40 0 4 10 20 30 V+ - Supply Voltage - V (V– = GND) 40 1 kΩ 15 VIN 7V +15 V – VO + 2 kΩ 10 5 0 1k 3 5 10 k 30 50 100 k f - Frequency - Hz 300 500 1 M µPC324 COMMON MODE REJECTION RATIO VOLTAGE FOLLOWER PULSE RESPONSE Output Voltage - V 4 100 80 RL ≥ 2 kΩ V+ = 15 V 3 2 1 0 60 3 40 Input Voltage - V CMR - Common Mode Rejection Ratio - dB 120 20 0 100 1k 10 k 100 k f - Frequency - Hz 1M 2 1 0 20 40 Time - µs 60 80 SLEW RATE SR– SR - Slew Rate - V/ µ s 0.3 SR+ 0.2 0.1 V± = ±15 V VO = ±10 V 0 –50 0 50 100 TA - Operating Ambient Temperature - °C 5 µPC324 PACKAGE DRAWINGS 14PIN PLASTIC DIP (300 mil) 14 8 1 7 A K L I J H C G B M R F D N M NOTES 1) Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition. 2) ltem "K" to center of leads when formed parallel. ITEM MILLIMETERS INCHES A B 20.32 MAX. 2.54 MAX. 0.800 MAX. 0.100 MAX. C 2.54 (T.P.) 0.100 (T.P.) D 0.50±0.10 0.020 +0.004 –0.005 F 1.2 MIN. 0.047 MIN. G H 3.6±0.3 0.51 MIN. 0.142±0.012 0.020 MIN. I J 4.31 MAX. 5.08 MAX. 0.170 MAX. 0.200 MAX. K 7.62 (T.P.) 0.300 (T.P.) L 6.4 0.252 M 0.25 +0.10 –0.05 0.010 +0.004 –0.003 N 0.25 0.01 R 0~15 ° 0~15° P14C-100-300B1-1 6 µPC324 14 PIN PLASTIC SOP (225 mil) 14 8 P detail of lead end 1 7 A H I E K F G J N C D M L B M NOTE Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS INCHES A 10.46 MAX. 0.412 MAX. B 1.42 MAX. 0.056 MAX. C 1.27 (T.P.) 0.050 (T.P.) D 0.40 +0.10 –0.05 0.016 +0.004 –0.003 E 0.1±0.1 0.004±0.004 F 1.8 MAX. 0.071 MAX. G 1.49 0.059 H 6.5±0.3 0.256±0.012 I 4.4 0.173 J 1.1 0.043 K 0.15 +0.10 –0.05 0.006 +0.004 –0.002 L 0.6±0.2 M 0.12 0.005 N 0.10 0.004 P 3 ° +7° –3° 3° +7° –3° 0.024 +0.008 –0.009 S14GM-50-225B, C-4 7 µPC324 RECOMMENDED SOLDERING CONDITIONS When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices. For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (C10535E). Surface mount device µPC324G2: 14-pin plastic SOP (225 mil) Process Conditions Symbol Infrared ray reflow Peak temperature: 230 °C or below (Package surface temperature), Reflow time: 30 seconds or less (at 210 °C or higher), Maximum number of reflow processes: 1 time. IR30-00-1 Vapor Phase Soldering Peak temperature: 215 °C or below (Package surface temperature), Reflow time: 40 seconds or less (at 200 °C or higher), Maximum number of reflow processes: 1 time. VP15-00-1 Wave Soldering Solder temperature: 260 °C or below, Flow time: 10 seconds or less, Maximum number of flow processes: 1 time, Pre-heating temperature: 120 °C or below (Package surface temperature). WS60-00-1 Partial heating method Pin temperature: 300 °C or below, Heat time: 3 seconds or less (Per each side of the device). – Caution Apply only one kind of soldering condition to a device, except for “partial heating method”, or the device will be damaged by heat stress. Through-hole device µPC324C: 14-pin plastic DIP (300 mil) Process Conditions Wave soldering (only to leads) Solder temperature: 260 °C or below, Flow time: 10 seconds or less. Partial heating method Pin temperature: 300 °C or below, Heat time: 3 seconds or less (per each lead.) Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered. 8 µPC324 REFERENCE DOCUMENTS QUALITY GRADES ON NEC SEMICONDUCTOR DEVICES C11531E SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL C10535E IC PACKAGE MANUAL C10943X GUIDE TO QUALITY ASSUARANCE FOR SEMICONDUCTOR DEVICES MEI-1202 SEMICONDUCTORS SELECTION GUIDE X10679E NEC SEMICONDUCTOR DEVICE RELIABILITY/ IEI-1212 QUALITY CONTROL SYSTEM - STANDARD LINEAR IC 9 µPC324 [MEMO] 10 µPC324 [MEMO] 11 µPC324 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 2