CM300DY-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBTMOD™ A-Series Module 300 Amperes/1200 Volts A F F W X G2 B G E2 E N L (4 PLACES) H E1 C2E1 E2 C1 K K K G G1 P P Q Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. M NUTS (3 PLACES) D Q T THICK U WIDTH P S C V LABEL R G2 E2 C2E1 E2 Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.25 108.0 N 1.18 30.0 B 2.44 62.0 P 0.71 18.0 Q 0.28 7.0 C Inches Millimeters 1.18+0.4/-0.02 30.0+1.0/-0.5 Dimensions D 3.66±0.01 93.0±0.25 R 0.87 22.2 E 1.89±0.01 48.0±0.25 S 0.33 8.5 F 0.98 25.0 T 0.02 0.5 G 0.24 6.0 U 0.110 2.8 H 0.59 15.0 V 0.16 4.0 K 0.55 14.0 W 0.85 21.5 L 0.26 Dia. Dia. 6.5 X 0.94 24.0 M M6 Metric M6 10/10 Rev. 1 Applications: £ AC Motor Control £ UPS £ Battery Powered Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM300DY-24A is a 1200V (VCES), 300 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 300 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM300DY-24A Dual IGBTMOD™ A-Series Module 300 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol CM300DY-24A Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts IC 300 Amperes ICM 600** Amperes Collector Current (DC, TC = 80°C*) Peak Collector Current Emitter Current*** IE 300 Amperes Peak Emitter Current*** IEM 600** Amperes Maximum Collector Dissipation (TC = 25°C*, Tj ≤ 150°C) PC 1890 Watts Mounting Torque, M6 Main Terminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb Weight — 400 Grams VISO 2500 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1.0 mA IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 6.0 7.0 8.0 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C — 2.1 3.0 Volts IC = 300A, VGE = 15V, Tj = 125°C — 2.4 — Volts Total Gate Charge QG VCC = 600V, IC = 300A, VGE = 15V — 1350 — nC Emitter-Collector Voltage** VEC IE = 300A, VGE = 0V — — 3.8 Volts Test Conditions Min. Typ. Max. Units — — 47 nf VCE = 10V, VGE = 0V — — 4 nf Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres — — Inductive Turn-on Delay Time td(on) — — Load Rise Time Switch Turn-off Delay Time Time Fall Time 0.9 550 nf ns tr VCC = 600V, IC = 300A, — — 180 ns td(off) VGE1 = VGE2 = 15V, RG = 1.0Ω, — — 600 ns tf Inductive Load — — 350 ns Diode Reverse Recovery Time*** trr Switching Operation, — — 250 ns Diode Reverse Recovery Charge*** Qrr IE = 300A — 9.0 — µC *TC, Tf measured point is just under the chips. **Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. ***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 10/10 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM300DY-24A Dual IGBTMOD™ A-Series Module 300 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case* Rth(j-c)Q Per IGBT 1/2 Module — — 0.066 °C/W Thermal Resistance, Junction to Case* Rth(j-c)D Per FWDi 1/2 Module — — 0.12 °C/W Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.02 — °C/W 1.0 — 16 Ω Contact Thermal Resistance External Gate Resistance RG *TC, Tf measured point is just under the chips. 15 450 12 300 11 150 10 9 0 2 4 6 8 1 0 300 150 450 8 6 IC = 300A 4 IC = 120A 2 0 600 IC = 600A 6 8 10 12 14 16 18 COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 102 CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 2 Tj = 25°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 102 Tj = 25°C Tj = 125°C 101 3 0 10 VGE = 15V Tj = 25°C Tj = 125°C 0 1 2 3 4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10/10 Rev. 1 td(on) 101 Coes 100 Cres tf tr 102 VCC = 600V VGE = 15V RG = 1.0Ω Tj = 125°C Inductive Load VGE = 0V 5 10-1 10-1 100 101 20 td(off) Cies SWITCHING TIME, (ns) 0 10 4 Tj = 25°C 13 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 600 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 101 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM300DY-24A Dual IGBTMOD™ A-Series Module 300 Amperes/1200 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) Irr trr 103 102 101 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) 0 500 0 1000 1500 2000 ESW(on) ESW(off) 100 101 102 103 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 102 101 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 VCC = 600V VGE = 15V RG = 1.0Ω Tj = 125°C Inductive Load C Snubber at Bus 102 Err 101 100 101 102 EMITTER CURRENT, IE, (AMPERES) GATE RESISTANCE, RG, (Ω) 10-3 5 101 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 101 100 10-2 VCC = 600V 10 COLLECTOR CURRENT, IC, (AMPERES) ESW(on) ESW(off) 10-1 15 VCC = 600V VGE = 15V RG = 1.0Ω Tj = 125°C Inductive Load C Snubber at Bus GATE CHARGE, QG, (nC) VCC = 600V VGE = 15V IC = 300A Tj = 125°C Inductive Load C Snubber at Bus 10-3 VCC = 400V 102 EMITTER CURRENT, IE, (AMPERES) 102 100 IC = 300A REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 101 101 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 VCC = 600V VGE = 15V RG = 1.0Ω Tj = 25°C Inductive Load REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) REVERSE RECOVERY TIME, trr, (ns) 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE CHARGE VS. VGE 103 101 Err VCC = 600V VGE = 15V IC = 300A Tj = 125°C Inductive Load C Snubber at Bus 100 100 101 102 GATE RESISTANCE, RG, () 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.066°C/W (IGBT) Rth(j-c) = 0.12°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 4 10/10 Rev. 1