CM300DY-24NFH Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ NFH-Series Module 300 Amperes/1200 Volts TC MEASURED POINT (BASEPLATE) A F F W X G2 B G E2 E N L (4 PLACES) H E1 C2E1 E2 C1 K K K G G1 M NUTS (3 PLACES) D P Q P Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Q T THICK U WIDTH P S C V LABEL R G2 E2 C2E1 E2 C1 Features: £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches A 4.25 108.0 2.44 62.0 B C Millimeters 1.18+0.04/-0.02 30.0+1.0/-0.5 Dimensions Inches Millimeters N 1.18 30.0 P 0.71 18.0 Q 0.28 7.0 Applications: £ Power Supplies £ Induction Heating £ Welders F 0.98 25.0 T 0.02 0.5 G 0.24 6.0 U 0.110 2.8 H 0.59 15.0 V 0.16 4.0 K 0.55 14.0 W 0.85 21.5 Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM300DY-24NFH is a 1200V (VCES), 300 Ampere Dual IGBTMOD™ Power Module. L 0.26 Dia. Dia. 6.5 X 0.94 24.0 Type M M6 Metric M6 Current Rating Amperes VCES Volts (x 50) CM 300 24 D 3.66±0.01 93.0±0.25 R 0.87 22.2 E 1.89±0.01 48.0±0.25 S 0.33 8.5 Rev. 01/06 1 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DY-24NFH Dual IGBTMOD™ NFH-Series Module 300 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM300DY-24NF Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts IC 300* Amperes ICM 600* Amperes Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) Units IE 300* Amperes IEM 600* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 1130 Watts Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C) PC 1900 Watts Mounting Torque, M6 Main Terminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb — 400 Grams VISO 2500 Volts Peak Emitter Current** Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 1.0 µA Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts IC = 300A, VGE = 15V, Tj = 125°C — 5.0 — Volts Total Gate Charge QG VCC = 600V, IC = 300A, VGE = 15V — 1360 — nC Emitter-Collector Voltage** VEC IE = 300A, VGE = 0V — — 3.5 Volts Min. Typ. Max. Units — — 47 nf — — 4.0 nf — — 0.9 nf — — 300 ns — — 80 ns Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Time Fall Time tr Test Conditions VCE = 10V, VGE = 0V VCC = 600V, IC = 300A, td(off) VGE1 = VGE2 = 15V, RG = 1.0Ω, — — 500 ns tf Inductive Load Switching Operation, — — 150 ns Diode Reverse Recovery Time** trr IE = 300A — — 250 ns Diode Reverse Recovery Charge** Qrr — 13 — µC * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 22 Rev. 01/06 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DY-24NFH Dual IGBTMOD™ NFH-Series Module 300 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module, TC Reference — — 0.11 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, TC Reference — — 0.18 °C/W Thermal Resistance, Junction to Case Rth(j-c)'Q — — 0.066 °C/W Thermal Resistance, Junction to Case Rth(j-c)'D Per FWDi 1/2 Module, — — 0.1 °C/W Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.04 — °C/W 1.0 — 10 Ω Point per Outline Drawing Point per Outline Drawing Per IGBT 1/2 Module, TC Reference Point Under Chips TC Reference Point Under Chips Contact Thermal Resistance External Gate Resistance RG OUTPUT CHARACTERISTICS (TYPICAL) 12 400 300 11 200 10 100 9 0 8 0 4 6 8 500 400 300 200 100 0 10 5 0 10 15 7 6 5 4 3 2 1 0 20 VGE = 15V Tj = 25°C Tj = 125°C 8 100 0 200 300 400 500 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 IC = 600A 8 6 IC = 300A 4 IC = 120A 2 600 102 Tj = 25°C Tj = 125°C Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 2 9 VGE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 13 15 500 600 14 VGE = 20V COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 600 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 102 Cies 101 Coes 100 Cres VGE = 0V 0 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) Rev. 01/06 20 101 0 1 2 3 4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DY-24NFH Dual IGBTMOD™ NFH-Series Module 300 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) tr VCC = 600V VGE = 15V RG = 1.0Ω Tj = 125C Inductive Load 100 101 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 102 101 102 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) 10-2 10-3 101 103 102 VCC = 400V VCC = 600V 12 8 4 0 0 400 800 1200 1600 2000 GATE CHARGE, QG, (nC) SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) 102 103 COLLECTOR CURRENT, IC, (AMPERES) 10-1 VCC = 600V VGE = 15V RG = 1.0Ω Tj = 25C Inductive Load 16 EMITTER CURRENT, IE, (AMPERES) VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 10-3 101 101 103 102 IC = 300A COLLECTOR CURRENT, IC, (AMPERES) 100 101 100 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 102 102 VCC = 600V VGE = ±15V IC = 300A Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 101 100 100 101 GATE RESISTANCE, RG, (Ω) 102 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 101 Irr trr 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY TIME, trr, (ns) tf 102 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) SWITCHING TIME, (ns) td(off) td(on) GATE CHARGE VS. VGE 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 103 Err 101 100 101 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load C Snubber at Bus 102 103 EMITTER CURRENT, IE, (AMPERES) 101 10-1 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.11C/W (IGBT) Rth(j-c) = 0.18C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 44 Rev. 01/06