RM400DY-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Super Fast Recovery Dual Diode Module 400 Amperes/1200 Volts A D L (4 PLACES) K K K U G C2E1 G2 E2 C1 E2 B E H N J E1 G1 M (3 PLACES) F G Z F X U Q P P Q Y V T P S W C LABEL R G2 (NC) E2 (NC) Di1 E2 C2E1 C1 Di2 E1 (NC) G1 (NC) Tolerance Otherwise Specified Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 Outline Drawing and Circuit Diagram Dimensions Inches A 4.33 110.0 3.15 80.0 B C Millimeters 1.14+0.04/-0.02 29.0+1.0/-0.5 Dimensions Inches N 1.18 Millimeters 30.0 P 0.71 18.0 Q 0.28 7.0 D 3.66±0.01 93.0±0.25 R 0.83 21.2 E 2.44±0.01 62.0±0.25 S 0.30 7.5 F 0.98 G 0.24 H 0.59 J 0.81 K 0.55 L 0.26 Dia. M M6 Metric 5/12 Rev. 0 T 0.02 0.5 U 0.16 4.0 15.0 V 0.11 2.8 20.5 W 0.33 8.5 14.0 X 0.21 5.3 Dia. 6.5 Y 0.47 12.0 Z 0.85 21.5 25.0 6.0 M6 Description: Powerex Super Fast Recovery Dual Diode modules are designed for use in applications requiring fast switching. The modules are isolated for easy mounting with other components on common heatsinks. Features: £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Copper Baseplate for Easy Heat Sinking £ RoHS Compliant Applications: £ AC Motor Control £ Motion/Servo Control £UPS £ Welding Power Supplies £ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. RM400DY-24S is a 1200V (VCES), 400 Ampere Super Fast Recovery Dual Diode Power Module. Type Current Rating Amperes VCES Volts (x 50) RM 400 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com RM400DY-24S Super Fast Recovery Dual Diode Module 400 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics SymbolRatingUnits Repetitive Peak Reverse Voltage VRRM 1200Volts Non-repetitive Peak Reverse Voltage VRSM 1200Volts Reverse DC Blocking Voltage VR(DC)960Volts DC Forward Current (DC, TC = 68°C)*1,*2IDC 400Amperes Surge Non-repetitive Forward Current 2000Amperes IFSM (1 Cycle of Half Wave at 60Hz, Peak Value, Tj = 25°C Start, VRM = 0V) I2t Current Square Time for Fusing 1.66 x 104 A2s (t w = 8.3ms, Tj = 25°C Start, Value for One Cycle of Surge Current) Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) Junction VISO 2500Volts Temperature*1T Storage Temperature *1 Junction temperature (Tj) should not increase beyond Tj(max) rating. *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. j -40 ~ +150 °C Tstg -40 ~ +125 °C 58.4 Di1 45.0 35.3 31.8 Di1 Di2 Di2 Di2 Di1 65.8 46.6 20.6 33.6 0 0 LABEL SIDE Di1 / Di2: FWDi Each mark points to the center position of each chip. 2 5/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com RM400DY-24S Super Fast Recovery Dual Diode Module 400 Amperes/1200 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IRRM VR = VRRM, Tj = 125°C — — 10 mA Reverse Current 25°C*3 Forward Voltage VF — 2.6 3.3 Volts Reverse Recovery Time trr VRM = 600V, IF = 400A, — — 250 ns Reverse Recovery Charge Qrr di/dt = 3500 A/µs, Inductive Load — 19 — µC Reverse Recovery Energy per Pulse Err Tj = 125°C, Inductive Load — 34 — mJ RAA' + KK' Main Terminals-Chip, — 0.75 — mΩ — — 0.062 K/W — 0.018 — K/W 35 40 in-lb Internal Lead Resistance IF = 400A, Tj = Per Diode,TC = 25°C Thermal Resistance Characteristics, Tj = 25°C unless otherwise specified Thermal Resistance, Junction to Case*2 Rth(j-c)D Contact Thermal Resistance, Rth(c-s) Case to Per Diode Thermal Grease Applied*4 Heatsink*2 (Per 1/2 Module) Mechanical Characteristics Mt Main Terminals, M6 Screw 31 Ms Mounting to Heatsink, M6 Screw 31 35 40 in-lb — 580 — Grams -100 — +100 µm On Centerline X, Y*5 – CONCAVE + CONVEX *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *3 Pulse width and repetition rate should be such as to cause negligible temperature rise. *4 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *5 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. Y BOTTOM HEATSINK SIDE HEATSINK SIDE 5/12 Rev. 0 – CONCAVE Di1 45.0 35.3 31.8 Di1 Di2 Di2 Di2 Di1 0 3 mm X 58.4 65.8 ec 46.6 Flatness of Baseplate 20.6 m 33.6 Weight 0 Mounting Torque LABEL SIDE Di1 / Di2: FWDi Each mark points to the center position of each chip. + CONVEX 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com RM400DY-24S Super Fast Recovery Dual Diode Module 400 Amperes/1200 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 0 1.0 2.0 3.0 102 102 101 4.0 102 102 101 101 103 102 FORWARD CURRENT, IDC, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) 102 VRM = 600V IF = 400A Tj = 25°C Inductive Load Irr trr 101 102 103 104 103 102 VRM = 600V IF = 400A Tj = 125°C Inductive Load Irr trr 101 102 103 104 100 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 10-2 10-1 100 10-2 103 RATE OF CURRENT CHARGE, di/dt, (A/μs) 104 10-3 100 101 102 103 FORWARD CURRENT, IF, (AMPERES) 101 10-1 10-1 101 100 102 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) VRM = 600V IF = 400A Inductive Load Tj = 25°C Tj = 125°C VRM = 600V -di/dt = 3500 A/μs Inductive Load Tj = 25°C Tj = 125°C 101 102 RATE OF CURRENT CHARGE, di/dt, (A/μs) REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) REVERSE RECIVERY ENERGY, Err, (mJ/PULSE) 103 FORWARD CURRENT, IDC, (AMPERES) RATE OF CURRENT CHARGE, di/dt, (A/μs) 4 101 103 102 103 VRM = 600V -di/dt = 3500 A/μs Tj = 125°C Inductive Load Irr trr FORWARD VOLTAGE, VF, (VOLTS) 103 102 104 REVERSE RECIVERY ENERGY, Err, (mJ/PULSE) REVERSE RECOVERY CURRENT, Irr (AMPERES) REVERSE RECOVERY TIME (ns) 101 VRM = 600V -di/dt = 3500 A/μs Tj = 25°C Inductive Load Irr trr 103 102 REVERSE RECOVERY CURRENT, Irr (AMPERES) REVERSE RECOVERY TIME (ns) FORWARD CURRENT, IDC, (AMPERES) Tj = 25°C Tj = 125°C REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, trr (ns) REVERSE RECOVERY CURRENT, Irr (AMPERES) 104 REVERSE RECOVERY CURRENT, Irr (AMPERES) 103 REVERSE RECOVERY TIME, trr (ns) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (CHIP - TYPICAL) Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.062°K/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 5/12 Rev. 0