2SC5130 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Ratings Unit VCB=500V 100max µA VEB=10V 10max µA IC=25mA 400min ICBO VCEO 400 V IEBO VEBO 10 V V(BR)CEO 5(Pulse10) A hFE VCE=4V, IC=1.5A 10 to 30 10.1±0.2 V A VCE(sat) IC=1.5A, IB=0.3A 0.5max 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.3A 20typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 30typ pF Tstg 3.9 2 PC ø3.3±0.2 a b V IB 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 133 1.5 10 –5 0.15 –0.3 1max 2max 0.3max VCE(sat)–IC Characteristics (Typical) 1 2 3 0.05 0.1 0.5 1 0 5 2 10 1 5 t s tg 1 Transient Thermal Resistance t on• t s t g • t f (µ s) –55˚C Swi tchi ng T im e 0.5 t on tf V C C 200V I C :I B 1 :–I B2 =10:1:2 0.1 0.1 0.5 1 3 0.5 0.4 50 ) (Case Temp mp) 100 1000 P c – T a Derating ite he at si nk Without Heatsink Natural Cooling L=3mH –IB2=0.5A Duty:less than 1% 20 fin Without Heatsink Natural Cooling 1 0.5 e Te 10 In 1 0.5 1 ith 5 s 1.4 30 10 µs 1.2 W 5 0µ Co lle ctor Cu rre nt I C ( A) 10 1.0 Time t(ms) 20 20 0.8 1 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 0.6 5 Collector Current I C (A) Collector Current I C (A) 10 0.4 θ j-a – t Characteristics Maximu m Power Dissi pation P C ( W) DC C urrent G ain h FE 25˚C 0.5 0.2 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 125˚C 0.1 0 Collector Current I C (A) (V C E =4V) 0.05 p) –55˚C (Case Temp) 0 0.01 4 h FE – I C Characteristics (Typical) 5 0.01 em 1 Collector-Emitter Voltage V C E (V) 50 eT 25˚C (Case Temp) θ j - a (˚ C/W) 0 2 –55˚C I B =50mA 1 125˚C (Case Temp) 0.5 3 Cas 2 1.0 (Cas 15 0m A 4 ˚C ( 30 0m A 3 I C / I B =5 Const. 25˚C 50 0m A 5 1.5 125 mA 4 Collector Current I C (A) I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s at) (V ) 800 Collecto r Cur ren t I C (A) Weight : Approx 2.0g a. Part No. b. Lot No. B C E (V C E =4V) 5 0 2.4±0.2 2.2±0.2 VCC (V) I C – V CE Characteristics (Typical) 4.2±0.2 2.8 c0.5 4.0±0.2 V 0.8±0.2 Unit 600 ±0.2 Conditions Ratings VCBO IC External Dimensions FM20(TO220F) 8.4±0.2 Symbol Application : Switching Regulator and General Purpose (Ta=25°C) 16.9±0.3 Symbol ■Electrical Characteristics 13.0min ■Absolute maximum ratings (Ta=25°C) 10 Without Heatsink 2 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 130 500 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150