STT3458N 3.4 A, 60 V, RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A E L 4 B F 1 2 3 C Low RDS(on) provides higher efficiency and extends battery life. Low gate charge Fast switch Miniature TSOP-6 surface mount package saves board space H J K DG FEATURES 5 6 Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. A B C D E F REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. PACKAGE INFORMATION Package MPQ LeaderSize TSOP-6 3K 7’ inch D D D D G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA= 25°C TA= 70°C 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Symbol Ratings Unit VDS VGS 60 ±20 3.4 2.7 ±15 1.7 2 1.3 -55 ~ 150 V ID IDM IS TA= 25°C TA= 70°C Power Dissipation 1 PD Tj, Tstg Thermal Resistance Ratings Operating Junction and Storage Temperature Range Maximum Junction to Ambient 1 Notes 1. 2. t ≦ 5 sec Steady State RJA 62.5 110 V A A A W °C °C / W Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 30-Dec-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 STT3458N 3.4 A, 60 V, RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Symbol Min. Typ. Max. Unit Test Conditions VGS(th) 1 - - V VDS=VGS, ID= 250uA Gate-Body Leakage IGSS - - ±100 nA VDS= 0V, VGS= ±20V - - 1 Zero Gate Voltage Drain Current IDSS - - 50 10 - - - - 92 On-State Drain Current 1 Drain-Source On-Resistance 1 ID(on) RDS(ON) A A - 107 VDS= 48V, VGS= 0V, TJ= 55°C VDS = 5V, VGS= 10V mΩ - VDS= 48V, VGS= 0V VGS= 10V, ID= 3.4A VGS= 4.5V, ID= 3.1A Forward Transconductance 1 gfs - 8 - S VDS= 4.5V, ID= 3.4A Diode Forward Voltage VSD - 1.10 - V IS= 1.7A, VGS= 0V Dynamic 2 Total Gate Charge Qg - 3.6 - Gate-Source Charge Qgs - 1.8 - Gate-Drain Charge Qgd - 1.3 - Turn-on Delay Time Td(on) - 10 - Tr - 10 - Td(off) - 20 - Tf - 10 - Rise Time Turn-off Delay Time Fall Time Notes 1. 2. nC VDS= 30V, VGS= 5V, ID= 3.4A nS VDD= 30V, VGEN= 10V, RL= 30, ID= 1A Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 30-Dec-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 2