APOLLOELECTRON BTB12-600

TF12A80
Standard Triac
Symbol
○
TO-220F
VDRM = 800V
2.T2
IT(RMS) = 12 A
▼▲
○
ITSM = 126A
3.Gate
1.T1 ○
1
2
3
Features
Repetitive Peak Off-State Voltage : 800V
R.M.S On-State Current ( IT(RMS)= 1 A )
◆ High Commutation dv/dt
◆
◆
General Description
This device is suit able for low power AC switching application, phase control application such a s fan
speed and temperature modulation control, lighting control and static switching relay where high sensitivity is required in all four quadrants.
This device may substitute for BTA12-600, BTB12-600, BT138-600, BCR12CM12L, TM1261M/S series.
Absolute Maximum Ratings
Symbol
VDRM
( Tj = 25°C unless otherwise specified )
Parameter
Condition
Repetitive Peak Off-State Voltage
Sine wave, 50 to 60 Hz
IT(RMS)
R.M.S On-State Current
Tj = 125 °C, Full Sine wave
ITSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
I2 t
Ratings
800
Units
V
12
A
120/126
A
tp = 10ms
72
A 2s
Average Gate Power Dissipation
Tj=125°C
1
W
IGM
Peak Gate Current
Tj=125°C
2
A
TJ
Operating Junction Temperature
- 40 ~ 125
°C
Storage Temperature
- 40 ~ 150
°C
I2 t
PG(AV)
TSTG
1/6
J u l y, 2010. Rev.2
copyright @ Apollo Electron Co., Ltd. All rights reserved.
TF12A80
Electrical Characteristics (Tj=25 °C unless otherwise specified)
Symbol
Conditions
Ratings
Min.
Max.
---
2 .0
mA
---
1.55
V
─
─
30
─
─
30
Repetitive Peak Off-State
Current
VD = VDRM, Single Phase, Half Wave
Tj = 125 °C
---
VTM
Peak On-State Voltage
ITM = 17 A, tp=380㎲
---
I+GT1
Ⅰ
I -GT1
Ⅱ
I -GT3
Ⅲ
─
─
30
V+GT1
Ⅰ
─
─
1.5
V-GT1
Ⅱ
─
─
1.5
V-GT3
Ⅲ
─
─
1.5
─
-
dv/dt
IH
Gate Trigger Current
Gate Trigger Voltage
VD = 12V, RL=30 Ω
VD = 12 V, RL=30 Ω
Unit
Typ.
IDRM
VGD
2/6
Items
Non-Trigger Gate Voltage
TJ = 125 °C, VD = VDRM RL=3.3kΩ
0.2
Critical Rate of Rise Off-State
Voltage
TJ = 125 °C
VD=2/3 VDRM
200
Holding Current
IT=0.2A
─
─
--
─
50
mA
V
V
V/㎲
mA
TF12A80
Fig 1. Gate Characteristics
2
10
VGM (10V)
1
10
On-State Current [A]
PGM (5W)
PG(AV) (1W)
25 ℃
0
IGM (2A)
Gate Voltage [V]
Fig 2. On-State Voltage
10
o
TJ = 125 C
1
10
o
TJ = 25 C
0
10
VGD (0.2V)
-1
10
1
2
10
0.5
3
10
10
1.0
1.5
16
π
θ
o
θ = 180 o
θ = 150
o
θ = 120
2π
θ
12
360°
10
θ : Conduction Angle
8
Allowable Case Temperature [ oC]
Power Dissipation [W]
3.0
3.5
130
14
6
θ = 90
o
θ = 60
o
θ = 30
o
4
2
0
2
4
6
8
10
12
120
110
100
2π
θ
90
80
θ : Conduction Angle
0
2
4
θ = 30
o
θ = 60
o
θ
θ
θ
θ
360°
70
14
θ
π
RMS On-State Current [A]
6
8
10
12
o
= 90
o
= 120o
= 150 o
= 180
14
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
10
200
60Hz
0
0
10
V
_
o
o
100
50
VGT (25 C)
150
VGT (t C)
Surge On-State Current [A]
2.5
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On State Current vs.
Maximum Power Dissipation
0
2.0
On-State Voltage [V]
Gate Current [mA]
V
V
50Hz
1
10
Time (cycles)
2
10
GT3
1
0.1
-50
+
GT1
_
GT1
0
50
100
150
o
Junction Temperature [ C]
3/6
TF12A80
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 8. Transient Thermal Impedance
10
o
o
IGT (t C)
IGT (25 C)
o
Transient Thermal Impedance [ C/W]
10
I
1
I
I
0.1
-50
0
50
Junction Temperature [ C]
4/6
_
GT3
100
o
+
GT1
_
GT1
150
1
0.1
-2
10
-1
10
0
10
Time (sec)
1
10
2
10
TF12A80
TO-220F Package Dimension
Sym bol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MIN
9.88
15.30
2.95
10.30
0.95
1.81
0.50
3.00
4.35
6.20
0.41
2.30
2.53
2.34
IN C H ES
TYP
10.08
15.50
3.00
10.50
1.08
1.84
0.70
3.20
4.45
6.40
0.51
2.50
2.73
2.54
MAX
10.28
15.70
3.05
10.70
1.20
1.87
0.90
3.40
4.55
6.60
0.61
2.70
2.93
2.74
MILLIMETER S
MIN
25.10
25.60
39.37
38.86
7.49
7.62
26.16
26.67
2.41
2.74
4.60
4.67
1.27
1.78
7.62
8.13
11.05
11.30
15.75
16.26
1.03
1.28
5.84
6.35
6.43
6.93
5.94
6.45
TYP
26.11
39.88
7.75
27.18
3.05
4.75
2.29
8.64
11.56
16.76
1.54
6.86
7.44
6.96
5/6
TF12A80
TO-220F Package Dimension, Forming
Dim.
mm
Typ.
Min.
10.4
6.18
9.55
8.4
6.05
1.26
3.17
1.87
2.57
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Max.
10.6
6.44
9.81
8.66
6.15
1.36
3.43
2.13
2.83
Inch
Typ.
Min.
0.409
0.243
0.376
0.331
0.238
0.050
0.125
0.074
0.101
2.54
5.08
0.100
0.200
2.51
1.23
0.45
0.65
2.62
1.36
0.63
0.78
0.099
0.048
0.018
0.0025
0.103
0.054
0.025
0.031
5.0
3.7
3.2
1.5
φ
φ 1
φ 2
0.197
0.146
0.126
0.059
A
E
F
I
H
B
φ
φ1
C
φ2
L
G
M
1
D
2
3
N
O
J
P
K
6/6
Max.
0.417
0.254
0.386
0.341
0.242
0.054
0.135
0.084
0.111
1. T1
2. T2
3. Gate