APOLLOELECTRON BT131

TN1A80
Sensitive Triac
Symbol
○
TO-92
VDRM = 800V
3.T2
IT(RMS) = 1A
▼▲
○
ITSM = 10A
2.Gate
1
1.T1 ○
2
3
Features
Repetitive Peak Off-State Voltage : 800V
R.M.S On-State Current ( IT(RMS)= 1 A )
◆ High Commutation dv/dt
◆
◆
General Description
This device is suit able for low power AC switching application, phase control application such a s fan
speed and temperature modulation control, lighting control and static switching relay where high sensitivity is required in all four quadrants.
This device may substitute for Z0107MA, BT131, BCR1AM-12 series.
Absolute Maximum Ratings
Symbol
( Tj = 25°C unless otherwise specified )
Parameter
Condition
Ratings
Units
V
Repetitive Peak Off-State Voltage
Sine wave, 50 to 60 Hz
800
IT(RMS)
R.M.S On-State Current
Tj = 110°C, Full Sine Wave
1.0
A
ITSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
10
A
0.41
A2s
Peak Gate Power Dissipation
1
W
Average Gate Power Dissipatio
0.1
W
1
A
VDRM
I2 t
PGM
PG(AV)
I2t for Fusing
tp = 10ms
IGM
Peak Gate Current
TJ
Operating Junction Temperature
- 40 ~ 125
°C
TSTG
Storage Temperature
- 40 ~ 150
°C
1/6
May., 2010. Rev.1
copyright @ Apollo Electron Co., Ltd. All rights reserved.
TN1A80
Electrical Characteristics (Tj =25°C unless otherwise specified)
Ratings
Symbol
Items
Conditions
Unit
Min.
IDRM
Repetitive Peak Off-State
Current
VD = VDRM, Single Phase, Half Wave
VTM
Peak On-State Voltage
ITM = 1 A, tp=380㎲
I+GT1
I
I -GT1
II
I -GT3
III
I+GT3
IV
V+GT1
I
V-GT1
,,
V-GT3
III
V+GT3
IV
VGD
dv/dt
IH
2/6
Gate Trigger Current
VD = 12V, RL=100 Ω
Gate Trigger Voltage
VD = 12V, RL=100 Ω
-
Typ.
Max.
-
0.5
mA
-
1.6
V
-
-
10
-
-
10
-
-
10
­
mA
-
-
30
-
-
1.8
-
-
1.8
-
-
1.8
-
-
2.0
V
Non-Trigger Gate Voltage
VD=1/2 VDRM
0.1
-
-
V
Critical Rate of Rise Off-State
Voltage
Tj = 110 °C
VD=2/3 VDRM
5
-
-
V/㎲
Holding Current
VD=12V, IT=0.1A
-
­
25
mA
TN1A80
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
1
10
1
VGM (6V)
25 ℃
I
25 ℃
0
10
I
I
I
On-State Current [A]
PGM (1W)
PG(AV) (0.1W)
+
GT3
+
I GM (1A)
Gate Voltage [V]
10
GT1
_
GT1
_
GT3
o
TJ = 125 C
0
10
o
TJ = 25 C
VGD(0.2V)
-1
-1
10
0
1
10
2
10
10
3
10
10
0.5
1.0
1.5
2.0
Allowable Case Temperature [ oC]
1.5
Power Dissipation [W]
o
π
θ
θ = 180o
θ = 150
o
θ = 120
o
θ = 90
2π
θ
360°
0.9
θ : Conduction Angle
θ = 60
o
θ = 30
o
0.6
0.3
0.0
0.0
0.2
0.4
0.6
3.0
3.5
4.0
0.8
1.0
120
110
100
90
80
π
θ
θ
θ
θ
θ
θ
2π
360°
60
θ : Conduction Angle
50
40
0.0
1.2
θ
θ
70
0.2
0.4
0.6
0.8
o
= 30
o
= 60
o
= 90
o
= 120o
= 150
o
= 180
1.0
1.2
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
10
12
10
V
V
o
6
50Hz
V
V
o
VGT (25 C)
60Hz
8
VGT (t C)
Surge On-State Current [A]
5.0
130
RMS On-State Current [A]
4
4.5
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On State Current vs.
Maximum Power Dissipation
1.2
2.5
On-State Voltage [V]
Gate Current [mA]
1
+
GT1
_
GT1
+
GT3
_
GT3
2
0
0
10
1
10
Time (cycles)
2
10
0.1
-50
0
50
100
150
o
Junction Temperature [ C]
3/6
TN1A80
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 8. Transient Thermal Impedance
10
3
Rθ (J-A)
o
Transient Thermal Impedance [ C/W]
10
IGT (25 oC)
IGT (t oC)
I
I
I
1
I
0.1
-50
+
GT3
2
10
Rθ (J-C)
1
10
0
0
50
100
o
Junction Temperature [ C]
4/6
+
GT1
_
GT1
_
GT3
150
10
-2
10
-1
10
0
10
1
10
Time (sec)
2
10
3
10
TN1A80
TO-92 Package Dimension
Dim.
mm
Min.
Inch
Typ.
A
Max.
Min.
4.2
Typ.
Max.
0.165
B
3.7
0.146
C
4.43
4.83
0.174
0.190
D
14.07
14.87
0.554
0.585
E
F
0.4
4.43
4.83
G
0.016
0.174
0.190
0.45
0.017
H
2.54
0.100
I
2.54
0.100
J
0.33
0.48
A
0.013
0.019
E
B
F
C
G
1
D
2
3
H
I
1. T1
2. Gate
3. T2
J
5/6
TN1A80
TO-92 Package Dimension, Forming
Dim.
mm
Min.
Inch
Typ.
A
Max.
Min.
Typ.
4.2
0.165
B
3.7
0.146
C
4.43
4.83
0.174
0.190
D
14.07
14.87
0.554
0.585
E
F
0.4
4.43
4.83
G
0.016
0.174
0.190
0.45
0.017
H
2.54
0.100
I
2.54
0.100
J
0.33
0.48
0.013
0.019
K
4.5
5.5
0.177
0.216
L
7.8
8.2
0.295
0.323
M
1.8
2.2
0.070
0.086
N
1.3
1.7
0.051
0.067
A
E
B
F
C
N
M
G
D
1
L
2
3
K
H
6/6
Max.
I
J
1. T1
2. Gate
3. T2