AOP604 Complementary Enhancement Mode Field Effect Transistor General Description The AOP604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses. Features n-channel p-channel VDS (V) = 30V -30V ID = 7.5A -6.6A RDS(ON) < 28mΩ < 35mΩ (VGS = 10V) < 43mΩ < 58mΩ (VGS = 4.5V) Schottky VDS=30V, I F=3A, VF<0.5V@1A PDIP-8 S1/A G1 S2 G2 D2 D1 K 1 2 3 4 D1/K D1/K D2 D2 8 7 6 5 N-ch G2 P-ch A G1 S2 S1 Absolute Maximum Ratings T A=25°C unless otherwise noted Symbol Parameter Max n-channel VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain Current A TA=25°C TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C ID IDM PD Max p-channel -30 ±20 7.5 -6.6 6 -5.3 30 -30 2.5 2.5 1.6 1.6 -55 to 150 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Parameter Reverse Voltage Continuous Forward Current A Symbol VDS Maximum Schottky 30 TA=25°C TA=70°C Pulsed Forward Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range 1 / 11 Units V V A W °C Units V 4 ID IDM PD TJ, TSTG 2.7 A 20 2.5 1.6 -55 to 150 W °C www.freescale.net.cn AOP604 Thermal Characteristics: n-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Thermal Characteristics: p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Thermal Characteristics: Schottky Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol RθJA RθJL Symbol RθJA RθJL Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 40 67 33 Max 50 80 40 Units °C/W °C/W °C/W Typ 38 66 30 Max 50 80 40 Units °C/W °C/W °C/W Typ 42 70 34 Max 50 80 40 Units °C/W °C/W °C/W A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. 2 / 11 www.freescale.net.cn AOP604 n-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Typ 30 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 30 VGS=10V, ID=7.5A Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS Schottky+ Body Diode Forward Voltage IS=1A Maximum Body-Diode+Schottky Continuous Current VGS=4.5V, ID=6.0A 12 µA 100 nA 1.8 3 V 22.6 28 33 43 A TJ=125°C VDS=5V, ID=7.5A Units V VDS=24V, VGS=0V RDS(ON) Max 16 mΩ mΩ S V DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance. (Schottky+FET) Coss Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg Total Gate Charge Qgs Gate Source Charge 0.45 0.5 4 680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=7.5A A pF 102 pF 77 pF 3 Ω 13.84 nC 6.74 nC 1.82 nC Qgd Gate Drain Charge 3.2 nC tD(on) Turn-On DelayTime 4.6 ns tr Turn-On Rise Time 4.1 ns 20.6 ns 5.2 ns 16.5 ns 7.8 nC tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=2.0Ω, RGEN=6Ω trr Body Diode Reverse Recovery time IF=7.5A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery charge IF=7.5A, dI/dt=100A/µs SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=1.0A 0.45 0.5 0.007 0.05 Irm Maximum reverse leakage current VR=30V VR=30V, TJ=125°C 3.2 10 VR=30V, TJ=150°C Junction Capacitance VR=15V 12 37 20 CT V mA pF 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. 3 / 11 www.freescale.net.cn AOP604 p-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.2 ID(ON) On state drain current VGS=-10V, VDS=-5V 30 RDS(ON) Static Drain-Source On-Resistance TJ=55°C VGS=-10V, ID=-6.6A TJ=125°C VGS=-4.5V, ID=-5A gFS Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-6.6A Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) µA -5 -2 ±100 nA -2.4 V A 28 35 37 45 44 58 mΩ mΩ 13 -0.76 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Units -1 Zero Gate Voltage Drain Current VSD Max V VDS=-24V, VGS=0V IDSS IS Typ VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-6.6A S -1 V -4.2 A 920 pF 190 pF 122 pF 3.6 Ω 18.5 nC 9.6 nC 2.7 nC Qgs Gate Source Charge Qgd Gate Drain Charge 4.5 nC tD(on) Turn-On DelayTime 7.7 ns tr Turn-On Rise Time 5.7 ns 20.2 ns 9.5 ns ns nC VGS=-10V, VDS=-15V, RL=2.3Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-6.6A, dI/dt=100A/µs 20 Qrr Body Diode Reverse Recovery Charge IF=-6.6A, dI/dt=100A/µs 8.8 A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. 4 / 11 www.freescale.net.cn AOP604 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 10V 25 20 6V 5V 4.5V VDS=5V 16 4V ID(A) ID (A) 20 15 3.5V 12 8 10 125°C 4 VGS=3V 5 25°C 0 0 0 1 2 3 4 0 5 0.5 Normalized On-Resistance 1.6 50 RDS(ON) (mΩ) 1.5 2 2.5 3 3.5 4 4.5 1.7 60 VGS=4.5V 40 30 20 VGS=10V VGS=10V ID=7.5A 1.5 1.4 VGS=4.5V 1.3 1.2 1.1 1 0.9 10 0 5 10 15 0.8 20 0 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 70 60 ID=7.5A 1.0E+00 50 IS Amps RDS(ON) (mΩ) 1 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 125°C 40 30 125°C 1.0E-01 1.0E-02 25°C 25°C 20 1.0E-03 10 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 5 / 11 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body diode characteristics MOSFET+Schottky www.freescale.net.cn 1.0 AOP604 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 1000 10 VDS=15V ID=7.5A 800 Capacitance (pF) VGS (Volts) 8 f=1MHz VGS=0V 900 6 4 2 700 Ciss 600 500 400 300 Coss(FET+Schottky) 200 100 0 0 2 4 6 8 10 12 Crss 0 14 0 Qg (nC) Figure 7: Gate-Charge characteristics 100 20 25 30 TJ(Max)=150°C TA=25°C 30 10µs 10ms 0.1s 1 15 40 Power W 100µs 1ms ID (Amps) 10 10 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C RDS(ON) limited 5 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) Z θJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 6 / 11 www.freescale.net.cn 1000 AOP604 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V 25 -6V -5V VDS=-5V 25 20 20 -4V -ID(A) -ID (A) 30 -4.5V 15 -3.5V 10 15 10 125°C 5 5 VGS=-3V 25°C 0 0 0 1 2 3 4 5 0 0.5 60 1.5 2 2.5 3 3.5 4 4.5 5 1.60 Normalized On-Resistance 55 VGS=-4.5V 50 45 RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 40 35 VGS=-10V 30 25 20 ID=-6.6A 1.40 VGS=-10V VGS=-4.5V 1.20 1.00 15 0.80 10 0 5 10 15 20 0 25 25 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 50 1.0E+01 65 1.0E+00 ID=-6.6A 60 1.0E-01 125°C 1.0E-02 50 125°C 45 -IS (A) RDS(ON) (mΩ) 55 1.0E-03 40 1.0E-04 35 25°C 30 25 25°C 1.0E-05 1.0E-06 0.0 20 3 7 / 11 -V6GS (Volts) 4 5 7 8 9 10 Figure 5: On-Resistance vs. Gate-Source Voltage 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AOP604 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=-15V ID=-6.6A 1250 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 0 0 0 4 8 12 16 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 100µs 0.1s 1ms 10ms 1s 20 25 30 TJ(Max)=150°C TA=25°C 20 10 10s DC 0 0.001 0.1 0.1 15 30 Power (W) RDS(ON) limited 1.0 10 40 TJ(Max)=150°C, TA=25°C 10.0 5 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 -ID (Amps) Crss 250 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 8 / 11 www.freescale.net.cn AOP604 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 250 10 f = 1MHz Capacitance (pF) 1 IF (Amps) 200 125°C 0.1 0.01 150 100 50 25°C 0.001 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 VF (Volts) Figure 12: Schottky Forward Characteristics 10 15 20 25 30 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 0.7 100 0.6 Leakage Current (mA) IF=3A 0.5 VF (Volts) 5 0.4 IF=1A 0.3 0.2 10 1 VR=30V 0.1 0.01 0.001 0.1 0 25 50 75 100 125 Temperature (°C) 150 0 175 25 50 75 100 125 150 175 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature Z θJA Normalized Transient Thermal Resistance 10 1 D=Ton/(Ton+Toff ) TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Toff 10 100 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance 9 / 11 www.freescale.net.cn 1000 PDIP-8 (300) Package Data NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±0.100 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.1000 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION NOTE: LG PARTN F A Y W LN - AOS LOGO - PART NUMBER CODE. - FAB LOCATION - ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE PDIP-8 PART NO. CODE PART NO. AOP604 10 / 11 CODE P604 PART NO. CODE PART NO. CODE www.freescale.net.cn PDIP-8 (300) Tube Data PDIP-8 Tube 11 / 11 www.freescale.net.cn