AON4703 20V P-Channel MOSFET with Schottky Diode General Description The AON4703 uses advanced trench technology to prov ide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidi rectional blocking switch, or for buck converter applications Features VDS (V) = -20V ID = -3.4A (VGS = -4.5V) RDS(ON) < 90mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) RDS(ON) < 160mΩ (VGS = -1.8V) SCHOTTKY VKA (V) = 20V, IF = 1A, VF<0.5V @ 1A DFN 3x2 Top View Bottom Pin 1 A A S G 1 2 3 4 8 7 6 5 D K S A K K D D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C B IDM TA=25°C Continuous Forward Current A TA=70°C B TA=70°C Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Thermal Characteristics Schottky t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C 1/6 ±8 -3.4 V -2.7 A -15 IF PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL Units V IFM TA=25°C Power Dissipation Schottky -20 VKA Schottky reverse voltage Pulsed Forward Current ID MOSFET 20 1.9 V 1.2 A 1.7 7 0.96 1.1 0.62 -55 to 150 -55 to 150 °C Typ 51 88 28 Max 75 110 35 Units 66 95 40 80 130 50 W °C/W °C/W www.freescale.net.cn AON4703 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -20 -1 TJ=55°C -5 IGSS Gate-Body leakage current VDS=0V, VGS=±8V Gate Threshold Voltage VDS=VGS ID=-250µA -0.4 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -15 VGS=-4.5V, ID=-3.4A Static Drain-Source On-Resistance 65 120 mΩ 83 160 mΩ -1 V -2 A IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time VGS=-4.5V, VDS=-10V, ID=-3.4A VGS=-4.5V, VDS=-10V, RL=2.9Ω, RGEN=3Ω Maximum reverse leakage current CT trr Qrr Junction Capacitance Schottky Reverse Recovery Time Schottky Reverse Recovery Charge 745 80 pF pF pF 15 23 Ω 8.5 11 nC 1.2 nC 2.1 nC 7.2 ns 36 ns 53 ns 56 ns 37 49 ns nC 0.5 V 27 0.4 VR=16V VR=16V, TJ=125°C VR=10V IF=1A, dI/dt=100A/µs IF=1A, dI/dt=100A/µs mΩ S 70 VGS=0V, VDS=0V, f=1MHz IF=-3.4A, dI/dt=100A/µs Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-3.4A, dI/dt=100A/µs SCHOTTKY PARAMETERS Forward Voltage Drop IF=1A VF Irm 12 -0.7 560 VGS=0V, VDS=-10V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs A VGS=-1.8V, ID=-1.5A VDS=-5V, ID=-3.4A Gate resistance V VGS=-2.5V, ID=-2.5A IS=-1A,VGS=0V Reverse Transfer Capacitance nA -1 90 Diode Forward Voltage Rg ±100 135 Forward Transconductance Crss -0.65 µA 51 VSD Output Capacitance Units 64 TJ=125°C gFS Coss Max V VDS=-20V, VGS=0V VGS(th) RDS(ON) Typ 0.2 20 44 11 2.5 mA pF 14 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. 2/6 www.freescale.net.cn AON4703 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 25 -3.0V -4.5V 16 12 15 -2.0V -ID(A) -ID (A) VDS=-5V -2.5V 20 8 10 125°C VGS=-1.5V 4 5 165 25°C 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 5 0 90 1 1.5 2 2.5 -VGS(Volts) Figure 2: Transfer Characteristics 3 Normalized On-Resistance 1.4 80 VGS=-2.5V RDS(ON) (mΩ Ω) 0.5 70 60 VGS=-4.5V 50 40 VGS=-2.5V ID=-2.5A 1.3 VGS=-1.8V ID=-1.5A 1.2 VGS=-4.5V ID=-3.4A 1.1 1 0.9 0 2 4 6 8 10 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 180 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 ID=-3.4A 1E+01 140 1E+00 100 125° -IS (A) RDS(ON) (mΩ Ω) 125° 1E-01 25°C 1E-02 1E-03 60 1E-04 25° 20 0 3/6 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1E-05 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 www.freescale.net.cn AON4703 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=-10V ID=-3.4A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1000 800 Ciss 600 400 Crss 1 Coss 200 0 165 0 0 2 4 6 8 10 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 100.0 20 20 TJ(Max)=150°C TA=25°C 100µs 15 10.0 RDS(ON) limited 1ms 0.1s 1.0 Power (W) 10µs -ID (Amps) 15 -VDS (Volts) Figure 8: Capacitance Characteristics 10ms 1s 5 TJ(Max)=150°C TA=25°C DC 0 0.1 0.1 10 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 4/6 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 www.freescale.net.cn AON4703 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 100 1.0E+01 125° f = 1MHz 80 Capacitance (pF) IF (Amps) 1.0E+00 1.0E-01 1.0E-02 60 40 20 25° 1.0E-03 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 VF (Volts) Figure 12: Schottky Forward Characteristics 0.5 10 15 20 VKA (Volts) Figure 13: Schottky Capacitance Characteristics Leakage Current (A) 1.0E-02 0.4 VF (Volts) 5 IF=0.5A 0.3 0.2 0.1 1.0E-03 VR=16V 1.0E-04 1.0E-05 1.0E-06 0 25 50 75 100 Temperature (°C) 125 Figure 14: Schottky Forward Drop vs. Junction Temperature 150 0 25 50 75 100 125 150 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=130°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 5/6 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Schottky Normalized Maximum Transient Thermal Impedance 100 1000 www.freescale.net.cn AON4703 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd + DUT Qgs Vds Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6/6 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn