SHENZHENFREESCALE SQR50N06-07L

SQR50N06-07L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
60
RDS(on) () at VGS = 10 V
0.0076
RDS(on) () at VGS = 4.5 V
0.009
ID (A)
• Package with Low Thermal Resistance
• 100 % Rg and UIS Tested
50
Configuration
Single
TO-252
Reverse Lead DPAK
• AEC-Q101 Qualifiedd
D
G
Drain Connected to Tab
G
D
S
S
Top View
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-252 Reverse Lead DPAK
Lead (Pb)-free and Halogen-free
SQR50N06-07L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
Continuous Drain Currenta
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain
Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
50
50
IS
50
IDM
200
IAS
48
EAS
115
PD
UNIT
136
45
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB
Mountc
RthJA
50
RthJC
1.1
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
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SQR50N06-07L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
VDS
VGS = 0 V, ID = 250 μA
60
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
VGS = 0 V
VDS = 60 V
-
-
1.0
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 60 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 60 V, TJ = 175 °C
-
-
250
On-State Drain Currenta
ID(on)
VGS = 10 V
VDS5 V
50
-
-
VGS = 10 V
ID = 20 A
-
0.0064
0.0076
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Drain-Source On-State Resistancea
Forward Transconductanceb
RDS(on)
gfs
VGS = 10 V
ID = 20 A, TJ = 125 °C
-
-
0.0130
VGS = 10 V
ID = 20 A, TJ = 175 °C
-
-
0.0160
VGS = 4.5 V
ID = 20 A
-
0.0078
0.0090
-
82
-
VDS = 15 V, ID = 20 A
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V
VDS = 25 V, f = 1 MHz
-
4455
5570
-
407
510
Reverse Transfer Capacitance
Crss
-
223
280
Total Gate Chargec
Qg
-
80
120
Gate-Source Chargec
Qgs
-
11.1
-
Gate-Drain
Chargec
Gate Resistance
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
VGS = 10 V
VDS = 30 V, ID = 50 A
Qgd
pF
nC
-
15.7
-
1
2
3
td(on)
-
12
18
tr
-
13
20
-
42
63
-
7
11
-
-
200
A
-
0.85
1.5
V
Rg
td(off)
f = 1 MHz
VDD = 30 V, RL = 0.6 
ID  50 A, VGEN = 10 V, Rg = 1 
tf

ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 20 A, VGS = 0 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SQR50N06-07L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
120
120
100
VGS = 10 V thru 4 V
ID - Drain Current (A)
ID - Drain Current (A)
100
80
60
40
20
80
60
TC = 25 °C
40
20
VGS = 3 V
TC = 125 °C
TC = - 55 °C
0
0
0
3
6
9
12
0
15
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
150
1.2
TC = - 55 °C
120
gfs - Transconductance (S)
ID - Drain Current (A)
1.0
0.8
0.6
TC = 25 °C
0.4
TC = 25 °C
90
TC = 125 °C
60
30
0.2
TC = - 55 °C
TC = 125 °C
0
0.0
0
1
2
3
4
0
5
10
VGS - Gate-to-Source Voltage (V)
0.025
40
50
6000
5000
C - Capacitance (pF)
0.020
RDS(on) - On-Resistance (Ω)
30
Transconductance
Transfer Characteristics
0.015
VGS = 4.5 V
0.010
0.005
VGS = 10 V
4000
3000
2000
0
0
20
40
60
Ciss
1000
0.000
80
ID - Drain Current (A)
On-Resistance vs. Drain Current
3/8
20
ID - Drain Current (A)
100
Coss
Crss
0
10
20
30
40
50
VDS - Drain-to-Source Voltage (V)
Capacitance
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60
SQR50N06-07L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.3
ID = 20 A
2.0
ID = 50 A
VDS = 30 V
8
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
10
6
4
2
1.7
VGS = 10 V
1.4
VGS = 4.5 V
1.1
0.8
0
0.5
0
20
40
60
80
100
- 50 - 25
0
Qg - Total Gate Charge (nC)
75
100
125
150
175
TJ - Junction Temperature (°C)
100
0.05
10
0.04
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
50
On-Resistance vs. Junction Temperature
Gate Charge
TJ = 150 °C
1
0.1
25
TJ = 25 °C
0.01
0.03
0.02
TJ = 150 °C
0.01
TJ = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
10
80
VDS - Drain-to-Source Voltage (V)
0.1
VGS(th) Variance (V)
8
On-Resistance vs. Gate-to-Source Voltage
0.5
- 0.3
ID = 5 mA
ID = 250 μA
- 0.7
- 1.1
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
4/8
6
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
- 1.5
- 50 - 25
4
125
150
175
76
ID = 10 mA
72
68
64
60
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
www.freescale.net.cn
SQR50N06-07L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
ID - Drain Current (A)
100
ID Limited
100 μs
1 ms
10
1
0.1
0.01
0.01
10 ms
100 ms
1 s, 10 s, DC
Limited by RDS(on)*
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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1000
SQR50N06-07L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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SQR50N06-07L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TO-252 REVERSE LEAD CASE OUTLINE
A
E
MILLIMETERS
C1
H
D
L2
b2
A1
b
gage plane
height (0.020)
L
L1
L3
A2
b1
E1
C
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.23
2.33
0.088
0.092
A1
0.64
0.89
0.025
0.035
A2
0.03
0.23
0.001
0.009
b
0.71
0.88
0.028
0.035
b1
0.76
1.14
0.030
0.045
b2
5.23
5.44
0.206
0.214
C
0.46
0.58
0.018
0.023
C1
0.46
0.58
0.018
0.023
D
5.97
6.22
0.235
0.245
D1
4.49
5.00
0.177
0.197
E
6.48
6.73
0.255
0.265
E1
4.32
-
0.170
-
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
H
9.65
10.41
0.380
0.410
L
1.40
1.78
0.055
0.070
L1
E1
INCHES
2.74 BSC
0.108 BSC
L2
0.89
1.27
0.035
0.050
L3
1.15
1.52
0.040
0.060
ECN: T-08706-Rev. B, 29-Sep-08
DWG: 5894
D1
e
e1
Note
Dimension L3 for reference only.
7/8
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SQR50N06-07L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s
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freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the
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