SSF3018
Feathers:
ID=60A
Advanced trench process technology
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Avalanche Energy 100% test
BV=100V
Rdson=15mohm
Description:
The SSF3018 is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the cell density
and reduces the on-resistance; its typical Rdson can reduce
to 13.8mohm.
Application:
Power switching application
Absolute Maximum Ratings
SSF3018 TOP View (TO220)
Parameter
Max.
Units
ID@Tc=25ْ C
Continuous drain current,VGS@10V
60
ID@Tc=100ْC
Continuous drain current,VGS@10V
50
IDM
Pulsed drain current ①
240
PD@TC=25ْC
Power dissipation
147
W
Linear derating factor
2.0
W/ْ C
VGS
Gate-to-Source voltage
±20
V
EAS
Single pulse avalanche energy ②
480
mJ
EAR
Repetitive avalanche energy
TBD
TJ
Operating Junction and
TSTG
Storage Temperature Range
A
ْC
–55 to +150
Thermal Resistance
RθJC
Parameter
Min.
Typ.
Max.
Units
Junction-to-case
—
0.85
—
ْC/W
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min.
Typ.
BVDSS
Drain-to-Source breakdown voltage
100
—
—
V
VGS=0V,ID=250μA
RDS(on)
Static Drain-to-Source on-resistance
—
13.8
15
mΩ
VGS=10V,ID=30A
VGS(th)
Gate threshold voltage
2.0
4.0
V
VDS=VGS,ID=250μA
gfs
Forward transconductance
42
—
S
VDS=10V,ID=30A
—
1
IDSS
Drain-to-Source leakage current
—
Max. Units
—
—
100
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
Qg
Total gate charge
—
49
—
Qgs
Gate-to-Source charge
—
15
—
IGSS
©Silikron Semiconductor CO. LTD.
2009.7.15
Test Conditions
VDS=100V,VGS=0V
μA
VDS=100V,
VGS=0V,TJ=150ْC
nA
VGS=20V
VGS=-20V
nC
Version: 1.0
ID=10A
VDS=0.5VDSS
page
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SSF3018
Qgd
Gate-to-Drain("Miller") charge
—
11
—
VGS=10V
td(on)
Turn-on delay time
—
27
—
VDS=0.5VDSS
tr
Rise time
—
40
—
td(off)
Turn-Off delay time
—
43
—
tf
Fall time
—
37
—
VGS=10V
Ciss
Input capacitance
—
2650
—
VGS=0V
Coss
Output capacitance
—
335
—
Crss
Reverse transfer capacitance
—
60
—
ID=10A
nS
RG=15Ω
pF
VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current.
IS
ISM
(Body Diode)
Pulsed Source Current
(Body Diode) ①
.
Min.
Typ.
Max.
—
—
60
Units
MOSFET symbol
A
—
—
240
Test Conditions
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.3
V
TJ=25ْC,IS=30A,VGS=0V ③
trr
Reverse Recovery Time
－
59
—
nS
IF=0.5*IS, VGS=0V, VR=0.5*VDSS
Qrr
Reverse Recovery Charge
－
112
—
nC
di/dt=100A/μs ③
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, ID = 37A, VDD = 50V
③ Pulse width≤300μS; duty cycle≤1.5% RG = 25ΩStarting TJ = 25°C
EAS test circuits:
Gate charge test circuit:
BV dss
©Silikron Semiconductor CO. LTD.
2009.7.15
Version: 1.0
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SSF3018
Switch Waveforms:
Switch Time Test Circuit：
Input Admittance
Capacitance
On Resistance vs. Junction Temperature
On Resistance vs. Drain Current
©Silikron Semiconductor CO. LTD.
2009.7.15
Version: 1.0
page
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SSF3018
Gate Charge
Forward Voltage Drop of Intrinsic Diode
Output Characteristics@25℃
Drain Current vs. Case Temperature
Maximum Transient Thermal Impedance
©Silikron Semiconductor CO. LTD.
2009.7.15
Version: 1.0
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SSF3018
TO220 MECHANICAL DATA:
©Silikron Semiconductor CO. LTD.
2009.7.15
Version: 1.0
page
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