ST3414A N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION ST3414A is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 FEATURE 3 D G S 1 2 1.Gate 2.Source 3.Drain 20V/4.2A, RDS(ON) = 45mΩ ( Typ.) @VGS = 4.5V 20V/3.4A, RDS(ON) = 60 mΩ @VGS = 2.5V 20V/2.8A, RDS(ON) = 80 mΩ @VGS = 1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23package design PART MARKING SOT-23 3 14YA 1 Y: Year Code 2 A: Week Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST3414A 2012. V1 ST3414A N Channel Enhancement Mode MOSFET 3.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V ID 3.0 2.2 A IDM 30 A Continuous Source Current (Diode Conduction) IS 1.2 A TA=25℃ TA=70℃ PD 1.25 0.8 W TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 125 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operation Junction Temperature ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST3414A 2012. V1 ST3414A N Channel Enhancement Mode MOSFET 3.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit V(BR)DSS VGS=0V,ID=-250uA 20 VGS(th) VDS=VGS,ID=250uA 0.40 IGSS Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current IDSS V 1.0 V VDS=0V,VGS=±12V ±100 nA VDS=20V,VGS=0V 1 VDS=20V,VGS=0V TJ=55℃ 5 uA Drain-source On-Resistance RDS(on) VGS=4.5V,ID=3.2A VGS=2.5V,ID=2.4A VGS=1.8V,ID=1.8A 0.045 0.060 0.080 Ω Forward Transconductance gfs VDS=4V,ID=3.6V 10 S Diode Forward Voltage VSD IS=1.6A,VGS=0V 0.8 1.2 4.8 8 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Turn-On Time td(on) Turn-Off Time Crss tr td(off) tf VDS=10V VGS=4.5V ID=2.8A VDS=6V VGS=0V f=1MHz VDD=6V RL=6Ω ID=1.0A VGEN=4.5V RG=6Ω 1.0 nC 1.0 485 85 pF 40 8 14 12 18 30 35 12 16 nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST3414A 2012. V1 ST3414A N Channel Enhancement Mode MOSFET 3.0A TYPICAL CHARACTERICTICS (25℃ Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST3414A 2012. V1 ST3414A N Channel Enhancement Mode MOSFET 3.0A TYPICAL CHARACTERICTICS (25℃ Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST3414A 2012. V1 ST3414A N Channel Enhancement Mode MOSFET 3.0A SOT-23- PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST3414A 2012. V1