ST2306SRG N Channel Enhancement Mode MOSFET 3.2A DESCRIPTION ST2306SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. FEATURE PIN CONFIGURATION SOT-23 3 D G S 1 2 1.Gate 2.Source 3.Drain 30V/3.2A, RDS(ON) = 45m-ohm (Typ.) @VGS = 10.0V 30V/2.0A, RDS(ON) = 62m-ohm @VGS = 4.5V 30V/1.5A, RDS(ON) =92 m-ohm @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PART MARKING SOT-23 3 04YA 1 Y: Year Code 2 A: Process Code ORDERING INFORMATION Part Number Package Part Marking ST2306SRG SOT-23 04YA ※ Process Code : A ~ Z ; a ~ z STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2306SRG 2005. V1 ST2306SRG N Channel Enhancement Mode MOSFET 3.2A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V ID 3.2 2.6 A IDM 10 A Continuous Source Current (Diode Conduction) IS 1.20 A TA=25℃ TA=70℃ PD 1.20 0.8 W TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operation Junction Temperature ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2306SRG 2005. V1 ST2306SRG N Channel Enhancement Mode MOSFET 3.2A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=250uA 30 VGS(th) VDS=VGS,ID=250uA 1.0 IGSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current IDSS V 3.0 V VDS=0V,VGS=±20V ±100 nA VDS=30V,VGS=1.0V 1 VDS=30V,VGS=0V TJ=55℃ 10 Drain-source On-Resistance RDS(on) VGS=10V,ID=3.2A VGS=4.5V,ID=2.0A VGS=2.5V,ID=1.5A Forward Transconductance gfs VDS=4.5V,ID=2.5V Diode Forward Voltage VSD IS=1.25A,VGS=0V uA 0.045 0.062 Ω 4.6 S 0.052 0.067 0.092 0.100 1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Turn-On Time td(on) Turn-Off Time Crss tr td(off) tf VDS=15V VGS=10V ID≡2.5A VDS=15V VGS=0V F=1MHz VDD=15V RL=15Ω ID=1.0A VGEN=10V RG=6Ω 4.5 10 0.8 nC 1.0 240 110 pF 17 8.0 20 12 30 17 35 8.0 20 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2306SRG 2005. V1 nS ST2306SRG N Channel Enhancement Mode MOSFET 3.2A TYPICAL CHARACTERICTICS (25℃ Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2306SRG 2005. V1 ST2306SRG N Channel Enhancement Mode MOSFET 3.2A TYPICAL CHARACTERICTICS (25℃ Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2306SRG 2005. V1 ST2306SRG N Channel Enhancement Mode MOSFET 3.2A SOT-23 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2306SRG 2005. V1