6332 STC STC6332 N&P Pair Enhancement Mode MOSFET 0.95A / -1A DESCRIPTION The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed. PIN CONFIGURATION T-363/SC-70-6L SO SOT-363/SC-70-6L PART MARKING FEATURE N-Channel � 20V/0.95A, RDS(ON) = 380mΩ (Typ.) @VGS = 4.5V � 20V/0.75A, RDS(ON) = 450mΩ @VGS = 2.5V � 20V/0.65A, RDS(ON) = 800mΩ @VGS = 1.8V P-Channel � -20V/-1.0A, RDS(ON) = 520mΩ(Typ.) @VGS = -4.5V � -20V/-0.8A, RDS(ON)= 700mΩ @VGS = - 2.5V � -20V/-0.7A, RDS(ON)= 700mΩ @VGS = - 1.8V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � SOT-363(SC-70-6L) package design STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC6332 2009. V1 6332 STC STC6332 N&P Pair Enhancement Mode MOSFET 0.95A / -1A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol N Typical P Unit Drain-Source Voltage VDSS 20 -20 V Gate-Source Voltage VGSS ±12 ±12 V ID 1.2 0.9 -1.0 -0.7 A IDM 4 -3 A IS 0.6 -0.6 A TA=25℃ TA=80℃ Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) TA=25℃ TA=70℃ Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient T≦10Sec Sready State PD 0.3 0.19 W TJ -55/150 ℃ TSTG -55/150 ℃ RθJA 360 400 360 400 ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC6332 2009. V1 6332 STC STC6332 N&P Pair Enhancement Mode MOSFET 0.95A / -1A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0V,ID=250uA VGS=0V,ID=-250uA VDS=VGS,ID=250uA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA VDS=0V,VGS=±12V Gate Leakage Current IGSS VDS=0V,VGS=±12V VDS=20V,VGS=0V IDSS VDS=-20V,VGS=0V Zero Gate Voltage Drain TJ=55℃ Current VDS=20V,VGS=0V VDS=-20V,VGS=0V VDS≧4.5V,VGS=5V On-State Drain Current ID(on) VDS≦-4.5V,VGS=-5V VGS=4.5V, ID=0.95A VGS=-4.5V,ID=-1.0A VGS=2.5V, ID=0.75A Drain-source On-Resistance RDS(on) VGS=-2.5V,ID=-0.8 A VGS=1.8V, ID=0.65A VGS=-1.8V,ID=-0.5 A VDS=10V,ID=1.2A Forward Tran Conductance gfs VDS=-10V,ID=-1.0A IS=0.5A,VGS=0V Diode Forward Voltage VSD IS=-0.5A,VGS=0V V(BR)DSS N 20 P -20 N 0.35 P -0.35 N P N P N P N 2 P -2 N P N P N P N P N P V 1.0 -1.0 100 -100 1 -1 5 -5 0 0.26 0.42 0.38 0.52 0.32 0.58 0.45 0.70 0.42 0.75 0.80 0.95 2.6 1.5 0.8 -0.8 V nA uA A Ω S 1.2 -1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Time Turn-Off Time td(on) tr td(off) tf N-Channel N VDS=10V,VGS=4.5V P ID≡1.2A N P P-Channel VDS=-10V,VGS=-4.5V N ID≡-1.0A P N N-Channel P VDS=10V,RL=20Ω N ID=0.5A,RGEN=6Ω P VGEN=4.5V N P-Channel P VDS=-10V,RL=20Ω ID=-0.5A,RGEN=-6Ω N P VGEN=-4.5V 1.2 1.1 0.2 0.3 0.3 0.2 15 18 20 25 25 20 2.0 1.8 12 12 20 20 nC 25 30 30 40 40 30 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC6332 2009. V1 nS 6332 STC STC6332 N&P Pair Enhancement Mode MOSFET 0.95A / -1A TYPICAL CHARACTERICTICS (N MOS) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC6332 2009. V1 6332 STC STC6332 N&P Pair Enhancement Mode MOSFET 0.95A / -1A TYPICAL CHARACTERICTICS (N MOS) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC6332 2009. V1 6332 STC STC6332 N&P Pair Enhancement Mode MOSFET 0.95A / -1A YPICAL CHARACTERICTICS (P MOS) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC6332 2009. V1 6332 STC STC6332 N&P Pair Enhancement Mode MOSFET 0.95A / -1A TYPICAL CHARACTERICTICS (P MOS) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC6332 2009. V1 6332 STC STC6332 N&P Pair Enhancement Mode MOSFET 0.95A / -1A SOP-8 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC6332 2009. V1 6332 STC STC6332 N&P Pair Enhancement Mode MOSFET 0.95A / -1A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC6332 2009. V1