STANSON STC6332

6332
STC
STC6332
N&P Pair Enhancement Mode MOSFET
0.95A / -1A
DESCRIPTION
The STC6332 is the N & P-Channel enhancement mode power field effect transistor
using high cell density DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance and provide superior switching
performance. This device is particularly suited for low voltage application such as
notebook computer power management and other battery powered circuits, where
high-side switching, low in-line power loss and resistance to transient are needed.
PIN CONFIGURATION
T-363/SC-70-6L
SO
SOT-363/SC-70-6L
PART MARKING
FEATURE
N-Channel
�
20V/0.95A, RDS(ON) = 380mΩ (Typ.)
@VGS = 4.5V
�
20V/0.75A, RDS(ON) = 450mΩ
@VGS = 2.5V
�
20V/0.65A, RDS(ON) = 800mΩ
@VGS = 1.8V
P-Channel
�
-20V/-1.0A, RDS(ON) = 520mΩ(Typ.)
@VGS = -4.5V
�
-20V/-0.8A, RDS(ON)= 700mΩ
@VGS = - 2.5V
�
-20V/-0.7A, RDS(ON)= 700mΩ
@VGS = - 1.8V
�
Super high density cell design for
extremely low RDS(ON)
�
Exceptional on-resistance and maximum
DC current capability
�
SOT-363(SC-70-6L) package design
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6332 2009. V1
6332
STC
STC6332
N&P Pair Enhancement Mode MOSFET
0.95A / -1A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
N
Typical
P
Unit
Drain-Source Voltage
VDSS
20
-20
V
Gate-Source Voltage
VGSS
±12
±12
V
ID
1.2
0.9
-1.0
-0.7
A
IDM
4
-3
A
IS
0.6
-0.6
A
TA=25℃
TA=80℃
Continuous Drain Current
(TJ=150℃)
Pulsed Drain Current
Continuous Source Current
(Diode Conduction)
TA=25℃
TA=70℃
Power Dissipation
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction
to Ambient
T≦10Sec
Sready State
PD
0.3
0.19
W
TJ
-55/150
℃
TSTG
-55/150
℃
RθJA
360
400
360
400
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6332 2009. V1
6332
STC
STC6332
N&P Pair Enhancement Mode MOSFET
0.95A / -1A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max Unit
Static
Drain-Source Breakdown
Voltage
VGS=0V,ID=250uA
VGS=0V,ID=-250uA
VDS=VGS,ID=250uA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250uA
VDS=0V,VGS=±12V
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
VDS=20V,VGS=0V
IDSS
VDS=-20V,VGS=0V
Zero Gate Voltage Drain
TJ=55℃
Current
VDS=20V,VGS=0V
VDS=-20V,VGS=0V
VDS≧4.5V,VGS=5V
On-State Drain Current
ID(on)
VDS≦-4.5V,VGS=-5V
VGS=4.5V, ID=0.95A
VGS=-4.5V,ID=-1.0A
VGS=2.5V, ID=0.75A
Drain-source On-Resistance RDS(on)
VGS=-2.5V,ID=-0.8 A
VGS=1.8V, ID=0.65A
VGS=-1.8V,ID=-0.5 A
VDS=10V,ID=1.2A
Forward Tran Conductance
gfs
VDS=-10V,ID=-1.0A
IS=0.5A,VGS=0V
Diode Forward Voltage
VSD
IS=-0.5A,VGS=0V
V(BR)DSS
N
20
P
-20
N 0.35
P -0.35
N
P
N
P
N
P
N
2
P
-2
N
P
N
P
N
P
N
P
N
P
V
1.0
-1.0
100
-100
1
-1
5
-5
0
0.26
0.42
0.38
0.52
0.32
0.58
0.45
0.70
0.42
0.75
0.80
0.95
2.6
1.5
0.8
-0.8
V
nA
uA
A
Ω
S
1.2
-1.2
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
N-Channel
N
VDS=10V,VGS=4.5V P
ID≡1.2A
N
P
P-Channel
VDS=-10V,VGS=-4.5V N
ID≡-1.0A
P
N
N-Channel
P
VDS=10V,RL=20Ω
N
ID=0.5A,RGEN=6Ω
P
VGEN=4.5V
N
P-Channel
P
VDS=-10V,RL=20Ω
ID=-0.5A,RGEN=-6Ω N
P
VGEN=-4.5V
1.2
1.1
0.2
0.3
0.3
0.2
15
18
20
25
25
20
2.0
1.8
12
12
20
20
nC
25
30
30
40
40
30
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6332 2009. V1
nS
6332
STC
STC6332
N&P Pair Enhancement Mode MOSFET
0.95A / -1A
TYPICAL CHARACTERICTICS (N MOS)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6332 2009. V1
6332
STC
STC6332
N&P Pair Enhancement Mode MOSFET
0.95A / -1A
TYPICAL CHARACTERICTICS (N MOS)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6332 2009. V1
6332
STC
STC6332
N&P Pair Enhancement Mode MOSFET
0.95A / -1A
YPICAL CHARACTERICTICS (P MOS)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6332 2009. V1
6332
STC
STC6332
N&P Pair Enhancement Mode MOSFET
0.95A / -1A
TYPICAL CHARACTERICTICS (P MOS)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6332 2009. V1
6332
STC
STC6332
N&P Pair Enhancement Mode MOSFET
0.95A / -1A
SOP-8 PACKAGE OUTLINE
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6332 2009. V1
6332
STC
STC6332
N&P Pair Enhancement Mode MOSFET
0.95A / -1A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6332 2009. V1