822 STN4 STN4822 Dual N Channel Enhancement Mode MOSFET 8.5A DESCRIPTION STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION SOP-8 FEATURE � � � � � 30V/8.5A, RDS(ON) = 16mΩ (Typ.) @VGS = 10V 30V/6.6A, RDS(ON) = 26mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 Y:Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4822 2009. V1 822 STN4 STN4822 Dual N Channel Enhancement Mode MOSFET 8.5A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V ID 8.5 6.6 A IDM 30 A IS 3.0 A PD 2.0 1.28 W TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 48 Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4822 2009. V1 822 STN4 STN4822 Dual N Channel Enhancement Mode MOSFET 8.5A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ V(BR)DSS VGS=0V,ID=250uA 30 VGS(th) VDS=VGS,ID=250 uA 1.0 IGSS Zero Gate Voltage Drain Current On-State Drain Current Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V 3.0 V VDS=0V,VGS=±20V 100 nA IDSS TJ=55℃ VDS=24V,VGS=0V 1 VDS=24V,VGS=0V 5 ID(on) VDS≥10V,VGS=5V Drain-source On-Resistance RDS(on) VGS=10V, ID=8.5A VGS=4.5V, ID=6.6A 20 Forward Tran Conductance gfs VDS=5.0V,ID=8.5A 23 Diode Forward Voltage VSD IS=1.0A,VGS=0V 0.76 1.0 15 23 Gate Leakage Current 1.8 30 uA 0 13 17 26 A mΩ S V Dynamic Total Gate Charge Qg VDS=15V,VGS=10V ID=8.5A Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.78 Input Capacitance Ciss 805 Output Capacitance Coss Reverse TransferCapacitance Crss Turn-On Time td(on) Turn-Off Time tr td(off) VDS=15.0V,VGS=0V f=1MHz 2.6 nC 1200 145 pF 112 VDS=15V,RL=1.8Ω ID=1A,VGEN=10V RG=3Ω tf 5.2 6.5 6 7.5 19.3 25 4.3 6 nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4822 2009. V1 822 STN4 STN4822 Dual N Channel Enhancement Mode MOSFET 8.5A TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4822 2009. V1 822 STN4 STN4822 Dual N Channel Enhancement Mode MOSFET 8.5A TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4822 2009. V1 822 STN4 STN4822 Dual N Channel Enhancement Mode MOSFET 8.5A SOP-8 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4822 2009. V1