4407 STP STP4 P Channel Enhancement Mode MOSFET - 12A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high-side switching. FEATURE PIN CONFIGURATION SOP-8 � � � � � � -30V/-12A, RDS(ON) = 9mΩ @VGS = -20V -30V/-12A, RDS(ON) = 10mΩ @VGS = -10V -30V/-10A, RDS(ON) = 15mΩ @VGS = -5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 1 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Copyright © 2007, Stanson Corp. STP4407 2009. V1 4407 STP STP4 P Channel Enhancement Mode MOSFET - 12A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±23 V ID -12 -10 A IDM -60 A IS -30 A PD 3.1 2.0 W TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 70 ℃/W Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature 2 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Copyright © 2007, Stanson Corp. STP4407 2009. V1 4407 STP STP4 P Channel Enhancement Mode MOSFET - 12A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=-250uA -30 VGS(th) VDS=VGS,ID=-250uA -1.0 IGSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V -3.0 V VDS=0V,VGS=±25V ±100 nA IDSS TJ=55℃ VDS=-30V,VGS=0V -1 VDS=-30V,VGS=0V -5 ID(on) VDS=-5V,VGS=-10V Drain-source OnResistance RDS(on) VGS=-20V,ID=-12A VGS=-10V,ID=-12A VGS=-5V, ID=-10A 9 10 15 mΩ Forward Transconductance gfs VDS=-5V,ID=-10A 26 S Diode Forward Voltage VSD IS=-1.0A,VGS=0V Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current -60 uA A -1 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse TransferCapacitance Crss Turn-On Time Turn-Off Time td(on) tr td(off) tf 30 VDS=-15V,VGS=0V f=1MHz 4.3 nC 10 2076 VDS ==-15V,VGS=0V f=1MHz 400 2500 pF 302 10.4 VDD=15V,RL=1.25Ω ID=-1A,VGEN=-10V RG=3Ω 24 nS 12.6 12 3 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Copyright © 2007, Stanson Corp. STP4407 2009. V1 4407 STP STP4 P Channel Enhancement Mode MOSFET - 12A TYPICAL CHARACTERICTICS 4 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Copyright © 2007, Stanson Corp. STP4407 2009. V1 4407 STP STP4 P Channel Enhancement Mode MOSFET - 12A TYPICAL CHARACTERICTICS 5 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Copyright © 2007, Stanson Corp. STP4407 2009. V1 4407 STP STP4 P Channel Enhancement Mode MOSFET - 12A PACKAGE OUTLINE SOP-8P 6 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Copyright © 2007, Stanson Corp. STP4407 2009. V1