STW56NM60N N-channel 600 V, 0.05 Ω, 45 A TO-247 MDmesh™ II Power MOSFET Preliminary data Features Order code VDSS RDS(on) max ID STW56NM60N 600 V < 0.06 Ω 45 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ 2 Low gate input resistance TO-247 Applications ■ 3 1 Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STW56NM60N 56NM60N TO-247 Tube July 2011 Doc ID 15723 Rev 2 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/11 www.st.com 11 Contents STW56NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2/11 .............................................. 6 Doc ID 15723 Rev 2 STW56NM60N 1 Electrical ratings Electrical ratings Table 2. Symbol Absolute maximum ratings Parameter Value Unit VDS Drain-source voltage (VGS = 0) 600 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 45 A ID Drain current (continuous) at TC = 100 °C 28 A Drain current (pulsed) 180 A Total dissipation at TC = 25 °C 300 W IAS Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) TBD A EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAS, VDD=50 V) TBD mJ 15 V/ns - 55 to 150 °C 150 °C Value Unit 0.42 °C/W IDM (1) PTOT dv/dt (2) Tstg Tj Peak diode recovery voltage slope Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤11 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 50 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Doc ID 15723 Rev 2 3/11 Electrical characteristics 2 STW56NM60N Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Drain-source V(BR)DSS breakdown voltage (VGS = 0) ID = 1 mA, Min. Typ. Max. Unit 600 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 600 V VDS = 600 V, TC = 125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 22.5 A 0.05 0.06 Ω Table 5. Symbol Ciss Coss Crss Coss eq. (1) Qg Qgs Qgd 2 Dynamic Parameter Test conditions Min. Typ. Max. Unit Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 4800 320 4.5 - pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 480 V - TBD - pF Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 45 A, VGS = 10 V, (see Figure 3) - 150 TBD TBD - nC nC nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 4/11 Doc ID 15723 Rev 2 STW56NM60N Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 22 A RG = 4.7 Ω VGS = 10 V (see Figure 2) Min. Typ. Max. Unit - TBD TBD TBD TBD - ns ns ns ns Min Typ. Max Unit - 45 180 A A 1.6 V Source drain diode Parameter Test conditions ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 45 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 45 A, di/dt = 100 A/µs VDD = 100 V (see Figure 4) - TBD TBD TBD ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 45 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 4) - TBD TBD TBD ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 15723 Rev 2 5/11 Test circuits STW56NM60N 3 Test circuits Figure 2. Switching times test circuit for resistive load Figure 3. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 4. AM01469v1 Test circuit for inductive load Figure 5. switching and diode recovery times A A D.U.T. FAST DIODE B B Unclamped inductive load test circuit L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 6. Unclamped inductive waveform AM01471v1 Figure 7. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 6/11 0 Doc ID 15723 Rev 2 10% AM01473v1 STW56NM60N 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 15723 Rev 2 7/11 Package mechanical data Table 8. STW56NM60N TO-247 mechanical data mm Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 8/11 Max. 5.50 Doc ID 15723 Rev 2 STW56NM60N Figure 8. Package mechanical data TO-247 drawing 0075325_F Doc ID 15723 Rev 2 9/11 Revision history 5 STW56NM60N Revision history Table 9. 10/11 Document revision history Date Revision Changes 30-Nov-2010 1 First release 18-Jul-2011 2 Section 4: Package mechanical data has been updated. Minor text changes. Doc ID 15723 Rev 2 STW56NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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