STP1N120 N-channel 1200V - 30Ω - 500mA - TO-220 Zener - protected SuperMESH™ Power MOSFET PRELIMINARY DATA General features Type VDSS RDS(on) ID PW STP1N120 1200V < 38Ω 500mA 45W ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ ESD improved capability ■ New high voltage benchmark ■ Gate charge minimized 3 1 2 TO-220 Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STP1N120 P1N120 TO-220 Tube September 2006 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/10 www.st.com 10 Contents STP1N120 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/10 ................................................ 6 STP1N120 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS=0) 1200 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 500 mA ID Drain current (continuous) at TC = 100°C 315 mA 2 A 0.36 W/°C 45 W Tbd V/ns -55 to 150 °C Value Unit Thermal resistance junction-case max 2.78 °C/W Rthj-amb (1) Thermal resistance junction-amb max 62.5 °C/W 300 °C IDM (1) Drain current (pulsed) Derating factor PTOT dv/dt (2) Tj Tstg Total dissipation at TC = 25°C Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD ≤1A, di/dt ≤200A/µs, VDD ≤960 Table 2. Symbol Rthj-case Tl Thermal data Parameter Maximum lead temperature for soldering purpose 1. When mounted on 1inch² FR-4 board, 2 oz Cu Table 3. Avalanche characteristics Symbol Parameter Max value Unit IAS Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) Tbd A EAS Single pulse avalanche energy (starting Tj=25°C, ID=IAS, VDD= 50V) Tbd mJ 3/10 Electrical characteristics 2 STP1N120 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1mA, VGS= 0 Min. Typ. Max. 1200 Unit V VDS = Max rating, VDS = Max rating,Tc=125°C 1 50 µA µA Gate body leakage current (VDS = 0) VGS = ±20V ±10 µA VGS(th) Gate threshold voltage VDS= VGS, ID = 50µA 3.75 4.5 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 0.25A 30 38 Ω Typ. Max. Unit IDSS Zero gate voltage drain current (VGS = 0) IGSS Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd 4/10 On/off states 3 Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =25V, f=1MHz, VGS=0 VDD=960V, ID = 500mA VGS =10V (see Figure 2) Min. 130 22 3 pF pF pF 7 Tbd Tbd nC nC nC STP1N120 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol ISD ISDM VSD(1) trr Qrr IRRM trr Qrr IRRM 1. Switching times Parameter Test conditions Turn-on delay time Rise time Turn-off delay time Fall time Min. Typ. Max. Tbd Tbd Tbd Tbd Tbd Unit ns ns ns ns Source drain diode Parameter Test conditions Min Typ. Source-drain current Source-drain current (pulsed) Forward on voltage ISD=1A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=1A, VDD=100V Reverse recovery time Reverse recovery charge Reverse recovery current di/dt = 50A/µs,Tj=25°C (see Figure 6) ISD=1A,VDD=100V di/dt=50A/µs,Tj=150°C (see Figure 6) Max Unit 500 2 mA A Tbd V Tbd Tbd Tbd ns nC A Tbd Tbd Tbd ns nC A Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 8. Symbol Gate-source zener diode Parameter Test conditions BVGSO (1) Gate-source breakdown voltage Igs ± 1mA, (open drain) Min 30 Typ. Max Unit V 1. The built-in-back zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possibile voltage transients that may occasionally be applied from gate to source. In this respect the zener voltage is appropriate to achieve an efficient and osteffective intervention to protect the device’s integrity. These integrated zener diodes thus avoid the usage of external components. 5/10 Test circuit STP1N120 3 Test circuit Figure 1. Switching times test circuit for resistive load Figure 3. Test circuit for inductive load Figure 4. switching and diode recovery times Unclamped inductive load test circuit Figure 5. Unclamped inductive waveform Switching time waveform 6/10 Figure 2. Figure 6. Gate charge test circuit STP1N120 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 Package mechanical data STP1N120 TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 8/10 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP1N120 5 Revision history Revision history Table 9. Revision history Date Revision 14-Sep-2006 1 Changes First release 9/10 STP1N120 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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