STMICROELECTRONICS STD6N52K3

STD6N52K3
STF6N52K3
N-channel 525 V, 1 Ω, 5 A, DPAK, TO-220FP
SuperMESH3™ Power MOSFET
Preliminary Data
Features
Type
RDS(on)
max
VDSS
ID
Pw
STD6N52K3
525 V
< 1.2 Ω
5A
70 W
STF6N52K3
525 V
< 1.2 Ω
5 A(1)
25 W
3
3
1. Limited by package
1
2
TO-220FP
■
100% avalanche tested
■
Extremely high dv/dt capability
■
Gate charge minimized
■
Very low intrinsic capacitances
■
Improved diode reverse recovery
characteristics
■
Zener-protected
Figure 1.
1
DPAK
Internal schematic diagram
Application
■
Switching applications
Description
The new SuperMESH3™ series is obtained
through the combination of a further fine tuning of
ST's well established strip-based PowerMESH™
layout with a new optimization of the vertical
structure. In addition to reducing on-resistance
significantly versus previous generation, special
attention has been taken to ensure a very good
dv/dt capability and higher margin in breakdown
voltage for the most demanding application.
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STD6N52K3
6N52K3
DPAK
Tape and reel
STF6N52K3
6N52K3
TO-220FP
Tube
September 2008
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/12
www.st.com
12
Contents
STD6N52K3 - STF6N52K3
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
.............................................. 6
STD6N52K3 - STF6N52K3
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
DPAK
TO-220FP
VDS
Drain-source voltage (VGS = 0)
525
V
VGS
Gate- source voltage
± 30
V
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
ID
IDM
(2)
PTOT
dv/dt
3.15
3.15
A
Total dissipation at TC = 25 °C
70
25
W
0.56
0.2
W/°C
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg
Storage temperature
20
(1)
A
20
VISO
Tj
(1)
Drain current (pulsed)
Derating factor
(3)
5 (1)
5
9
V/ns
--
Max. operating junction temperature
A
2500
V
-55 to 150
°C
150
°C
1. Limited by package
2. Pulse width limited by safe operating area
3. ISD ≤ 6.3 A, di/dt = TBD, VDD = 80% V(BR)DSS.
Table 3.
Symbol
Thermal data
Parameter
DPAK
TO-220FP
Unit
Rthj-case
Thermal resistance junction-case max
1.79
5
°C/W
Rthj-pcb
Thermal resistance junction-pcb max
50
--
°C/W
Rthj-amb
Thermal resistance junction-ambient max
--
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
Table 4.
300
°C
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
TBD
A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50V)
TBD
mJ
3/12
Electrical characteristics
2
STD6N52K3 - STF6N52K3
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
On /off states
Parameter
Drain-source
breakdown voltage
Test conditions
ID = 1 mA, VGS = 0
IDSS
VDS = Max rating
Zero gate voltage
drain current (VGS = 0) VDS = Max rating, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Gate threshold voltage VDS = VGS, ID = 100 µA
RDS(on
Static drain-source on
resistance
Symbol
gfs (1)
Typ.
Max.
Unit
525
V
1
50
µA
µA
± 10
µA
3.75
4.5
V
1.0
1.2
Ω
Typ.
Max.
Unit
VGS = ± 30 V
VGS(th)
Table 6.
Min.
3
VGS = 10 V, ID = 2.5 A
Dynamic
Parameter
Forward
transconductance
Test conditions
Min.
VDS = 15 V, ID = 2.5 A
TBD
S
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz, VGS = 0
TBD
TBD
TBD
pF
pF
pF
Equivalent output
capacitance
VGS = 0, VDS = 0 to 240 V
TBD
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
TBD
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 240 V, ID = 5 A,
VGS = 10 V
(see Figure 3)
TBD
TBD
TBD
nC
nC
nC
Ciss
Coss
Crss
COSS eq(1)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Table 7.
Symbol
td(on)
tr
td(off)
tf
4/12
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 150 V, ID = 3.15 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 2)
Min.
Typ.
TBD
TBD
TBD
TBD
Max
Unit
ns
ns
ns
ns
STD6N52K3 - STF6N52K3
Table 8.
Electrical characteristics
Source drain diode
Symbol
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
ISD = 5 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 7)
TBD
TBD
TBD
ns
nC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 7)
TBD
TBD
TBD
ns
nC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
Test conditions
Min.
Typ.
Max. Unit
6.3
25
A
A
1.6
V
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 9.
Symbol
BVGSO(1)
Gate-source Zener diode
Parameter
Gate-source breakdown
voltage
Test conditions
Igs=± 1 mA (open drain)
Min
Typ
Max Unit
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
5/12
Test circuits
STD6N52K3 - STF6N52K3
3
Test circuits
Figure 2.
Switching times test circuit for
resistive load
Figure 4.
Test circuit for inductive load
Figure 5.
switching and diode recovery times
Unclamped Inductive load test
circuit
Figure 6.
Unclamped inductive waveform
Switching time waveform
6/12
Figure 3.
Figure 7.
Gate charge test circuit
STD6N52K3 - STF6N52K3
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
7/12
Package mechanical data
STD6N52K3 - STF6N52K3
TO-220FP mechanical data
mm.
Dim.
Min.
A
4.40
inch
Typ
Max.
Min.
4.60
0.173
Typ.
0.181
Max.
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.70
0.017
0.027
F
0.75
1.00
0.030
0.039
F1
1.15
1.50
0.045
0.067
F2
1.15
1.50
0.045
0.067
G
4.95
5.20
0.195
0.204
G1
2.40
2.70
0.094
0.106
H
10
10.40
0.393
L2
16
0.409
0.630
28.6
30.6
1.126
L4
9.80
10.60
0.385
1.204
0.417
L5
2.9
3.6
0.114
0.141
L6
15.90
16.40
0.626
0.645
L7
9
9.30
0.354
0.366
Dia
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F2
H
G
G1
Dia
F
F1
L7
L2
L5
1 2 3
L4
7012510-I
8/12
STD6N52K3 - STF6N52K3
Package mechanical data
TO-252 (DPAK) mechanical data
DIM.
mm.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
D1
E
6.20
5.10
6.40
E1
6.60
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
L1
2.80
L2
L4
0.80
0.60
R
V2
1
0.20
0o
8o
0068772_G
9/12
Package mechanical data
5
STD6N52K3 - STF6N52K3
Package mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
10/12
inch
1.5
D1
1.5
E
1.65
MIN.
MAX.
12.1
0.476
1.6
0.059 0.063
1.85
0.065 0.073
0.059
F
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
0.153 0.161
P0
3.9
4.1
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
R
40
W
15.7
1.574
16.3
0.618
0.641
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
18.4
0.645 0.724
0.059
0.795
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
STD6N52K3 - STF6N52K3
6
Revision history
Revision history
Table 10.
Document revision history
Date
Revision
03-Sep-2008
1
Changes
Initial release
11/12
STD6N52K3 - STF6N52K3
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