STMICROELECTRONICS STE140NF20D

STE140NF20D
N-channel 200 V, 10 mΩ typ., 140 A STripFET™ II Power MOSFET
(with fast diode) in an ISOTOP package
Datasheet − production data
Features
Type
VDSS
RDS(on) max
ID
STE140NF20D
200 V
< 0.012 Ω
140 A
■
Exceptional dv/dt capability
■
Low gate charge
■
100% avalanche tested
Applications
ISOTOP
Switching applications
Description
This Power MOSFET is produced using
STMicroelectronics’ unique STripFETTM process,
which is specifically designed to minimize input
capacitance and gate charge. The device offers
extremely fast switching performance thanks to
the intrinsic fast body diode, making the device
ideal for hard switching topologies.
Table 1.
Figure 1.
Internal schematic diagram
Device summary
Order code
Marking
Package
Packaging
STE140NF20D
140NF20D
ISOTOP
Tube
October 2012
This is information on a product in full production.
Doc ID 15299 Rev 4
1/13
www.st.com
13
Contents
STE140NF20D
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/13
.............................................. 9
Doc ID 15299 Rev 4
STE140NF20D
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
200
V
VGS
Gate-source voltage
± 20
V
ID
Drain current (continuous) at TC = 25 °C
140
A
ID
Drain current (continuous) at TC=100 °C
88
A
IDM(1)
Drain current (pulsed)
560
A
PTOT
Total dissipation at TC = 25 °C
500
W
IAR(2)
Avalanche current, repetitive or not repetitive
140
A
EAS(3)
Single pulse avalanche energy
800
mJ
dv/dt(4)
Peak diode recovery voltage slope
25
V/ns
2500
V
- 55 to 150
°C
Value
Unit
0.25
°C/W
40
°C/W
VISO
TJ
Tstg
Insulation winthstand voltage (AC-RMS)
Operating junction temperature
Storage temperature
1. Pulse width limited by safe operating area
2. Pulse width limited by Tjmax
3. Strating Tj = 25 °C, ID = IAR, VDD = 50 V
4. ISD ≤ 140 A, di/dt ≤ 1000 A/µs, VDD ≤ 80% V(BR)DSS
Table 3.
Thermal resistance
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-amb
Thermal resistance junction-ambient
Doc ID 15299 Rev 4
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Electrical characteristics
2
STE140NF20D
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 200 V,
VDS = 200 V, TC = 125 °C
10
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
3
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 70 A
10
12
mΩ
Min.
Typ.
Max.
Unit
-
11100
2190
334
-
pF
pF
pF
-
1525
-
pF
-
1139
-
pF
V(BR)DSS
Table 5.
Symbol
Ciss
Coss
Crss
Co(tr) (1)
Co(er)
(2)
200
2
V
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f=1 MHz,
VGS=0
Equivalent capacitance time
related
Equivalent capacitance
energy related
VDS = 0 to 160 V, VGS = 0,
Rg
Intrinsic gate resistance
f = 1 MHz open drain
-
1.4
-
Ω
Qg
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 160 V, ID = 140 A,
VGS= 10 V
(see Figure 16)
-
338
47
183
-
nC
nC
nC
Qgs
Qgd
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/13
Doc ID 15299 Rev 4
STE140NF20D
Electrical characteristics
Table 6.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Table 7.
Symbol
VDD = 100 V, ID= 70 A,
RG=4.7 Ω, VGS =10 V
(see Figure 15)
Min.
Typ.
Max.
Unit
-
232
218
283
250
-
ns
ns
ns
ns
Min.
Typ.
Max.
Unit
Source drain diode
Parameter
Test conditions
Source-drain current
-
140
A
(1)
Source-drain current (pulsed)
-
560
A
(2)
Forward on voltage
ISD = 140 A, VGS=0
-
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 140 A,
di/dt = 100 A/µs,
VDD= 60 V
-
190
1.4
14
ns
nC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 140 A,
di/dt = 100 A/µs,
VDD= 60 V, Tj=150 °C
-
257
2.4
18
ns
µC
A
ISD
ISDM
VSD
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
trr
Qrr
IRRM
trr
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15299 Rev 4
5/13
Electrical characteristics
STE140NF20D
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 5.
Transfer characteristics
!-V
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4J #
4C #
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3
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,I PER
M AT
ITE IO
D NI
BY N
M THI
AX SA
2 RE
A
IS
—S
—S
MS
MS
Figure 4.
6$36
Output characteristics
!-V
)$
!
6'36
!-V
)$
!
6$36
6
6
6
Figure 6.
6$36
Gate charge vs gate-source voltage Figure 7.
!-V
6$3
6'3
6 6$3
6
6$$6
)$!
6'36
Static drain-source on-resistance
!-V
2$3ON
/HM
6'36
6/13
1GN#
Doc ID 15299 Rev 4
)$!
STE140NF20D
Figure 8.
Electrical characteristics
Capacitance variations
Figure 9.
!-V
#
P&
Output capacitance stored energy
!-V
%OSS
—*
#ISS
#OSS
#RSS
6$36
Figure 10. Normalized gate threshold voltage
vs temperature
!-V
6'3TH
NORM
6$36
Figure 11. Normalized on resistance vs
temperature
!-V
2$3ON
NORM
6'36
)$!
)$—!
4* #
Figure 12. Source-drain diode forward
characteristics
4* #
Figure 13. Normalized BVDSS vs temperature
!-V
63$
6
4* #
!-V
"6$33
NORM
)$M!
4* #
4* #
)3$!
Doc ID 15299 Rev 4
4* #
7/13
Electrical characteristics
STE140NF20D
Figure 14. Maximum avalanche energy vs
starting Tj
!-V
%!3
M*
)$!
6$$6
8/13
4* #
Doc ID 15299 Rev 4
STE140NF20D
3
Test circuits
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 17. Test circuit for inductive load
Figure 18. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 19. Unclamped inductive waveform
AM01471v1
Figure 20. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID 15299 Rev 4
10%
AM01473v1
9/13
Package mechanical data
4
STE140NF20D
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 8.
ISOTOP mechanical data
mm
Dim.
Min.
10/13
Typ.
Max.
A
11.76
12.19
A1
8.92
9.58
B
7.80
8.18
C
0.76
0.84
C2
1.98
2.13
D
38
38.20
D1
31.50
31.70
E
25.20
25.45
E2
24.59
25.07
G
14.91
15.09
G1
12.57
12.83
F
4.09
4.19
F1
4.67
4.93
φP
4.09
4.27
P1
4.06
4.32
Q
26.54
26.90
R
3.94
4.42
S
30.12
30.30
T
3.30
3.61
U
6.88
7.09
Doc ID 15299 Rev 4
STE140NF20D
Figure 21.
Package mechanical data
ISOTOP drawing
0041565_Rev_I
Doc ID 15299 Rev 4
11/13
Revision history
5
STE140NF20D
Revision history
Table 9.
Document revision history
Date
Revision
27-Jan-2009
1
First release
18-Jan-2010
2
Document status promoted from preliminary data to datasheet.
01-Jul-2010
3
Inserted VISO parameter in Table 2: Absolute maximum ratings
4
Updated: Figure 1, 5, 6, 10, 11, 13.
Updated: ISD value in note 4 (below Table 2: Absolute maximum
ratings).
Updated: IDSS and IGSS values (test conditions) in Table 4: On/off
states.
Updated: Section 4: Package mechanical data.
Minor text changes.
17-Oct-2012
12/13
Changes
Doc ID 15299 Rev 4
STE140NF20D
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