TDA7293 120-volt, 100-watt, DMOS audio amplifier with mute and standby Features Multipower BCD technology Very high operating voltage range (±50 V) DMOS power stage High output power (100 W into 8 Ω @ THD =10%, with VS = ±40 V) Muting and stand-by functions No switch on/off noise Very low distortion Very low noise Short-circuit protected (with no input signal applied) Thermal shutdown Clip detector Modularity (several devices can easily be connected in parallel to drive very low impedances) Multiwatt15V class AB amplifier in Hi-Fi field applications, such as home stereo, self powered loudspeakers and Topclass TV. Thanks to the wide voltage range and to the high output current capability it is able to supply the highest power into both 4-Ω and 8-Ω loads. The built-in muting function with turn-on delay simplifies the remote operation avoiding on-off switching noises. Parallel mode is possible by connecting several devices and using pin11. High output power can be delivered to very low impedance loads, so optimizing the thermal dissipation of the system Table 1. Description Device summary Order code The TDA7293 is a monolithic integrated circuit in Multiwatt15 package, intended for use as audio Figure 1. Multiwatt15H Package TDA7293V Multiwatt15V TDA7293HS Multiwatt15H TDA7293 block diagram +Vs C7 100nF C6 1000µF R3 22K C2 22µF BUFFER DRIVER +Vs R2 680Ω C1 470nF IN- 2 IN+ 3 +PWVs 11 7 13 - R1 22K SGND R5 10K MUTE STBY 12 BOOT LOADER C5 22µF 6 10 5 THERMAL SHUTDOWN MUTE VSTBY OUT 4 (**) VMUTE 14 + 9 S/C PROTECTION (*) BOOTSTRAP CLIP DET VCLIP STBY R4 22K C3 10µF C4 10µF 1 8 15 STBY-GND -Vs -PWVs C9 100nF C8 1000µF D97AU805A (*) see Application note (**) for SLAVE function September 2010 Doc ID 6744 Rev 8 -Vs 1/21 www.st.com 21 Contents TDA7293 Contents 1 Pin connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 4 5 6 2/21 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Circuit description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.1 Output Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.2 Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.3 Other Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Applications information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 Applications suggestions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 High efficiency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.3 Bridge application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.4 Modular application (ref. figure 12) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.5 Bootstrap capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.1 Vertically-mounted package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.2 Horizontally-mounted package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Doc ID 6744 Rev 8 TDA7293 1 Pin connections Pin connections Figure 2. Pin connections 15 -VS (POWER) 14 OUT 13 +VS (POWER) 12 BOOTSTRAP LOADER 11 BUFFER DRIVER 10 MUTE 9 STAND-BY 8 -VS (SIGNAL) 7 +VS (SIGNAL) 6 BOOTSTRAP 5 CLIP AND SHORT CIRCUIT DETECTOR 4 SIGNAL GROUND 3 NON INVERTING INPUT 2 INVERTING INPUT 1 STAND-BY GND TAB CONNECTED TO PIN 8 Doc ID 6744 Rev 8 D97AU806 3/21 Electrical specifications TDA7293 2 Electrical specifications 2.1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Supply voltage (no signal) ±60 V V1 VSTANDBY GND voltage referred to -VS (pin 8) 90 V V2 Input voltage (inverting) referred to -VS 90 V V2 - V3 Maximum differential inputs ±30 V V3 Input voltage (non inverting) referred to -VS 90 V V4 Signal GND voltage referred to -VS 90 V V5 Clip detector voltage referred to -VS 120 V V6 Bootstrap voltage referred to -VS 120 V V9 Standby voltage referred to -VS 120 V V10 Mute voltage referred to -VS 120 V V11 Buffer voltage referred to -VS 120 V V12 Bootstrap loader voltage referred to -VS 100 V IO Output peak current 10 A Ptot Power dissipation Tcase = 70°C 50 W Top Operating ambient temperature range 0 to 70 °C Tstg, Tj Storage and junction temperature 150 °C VS Supply voltage (no signal) ±60 V V1 VSTANDBY GND voltage referred to -VS (pin 8) 90 V ±1500 V Thermal data Table 3. Symbol Rthj-case 4/21 Unit VS ESD maximum withstanding voltage range, VESD_HBM test condition CDF-AEC-Q100-002- ”Human body model” 2.2 Value Thermal data Parameter Thermal resistance junction to case Doc ID 6744 Rev 8 Min - Typ 1 Max 1.5 Unit °C/W TDA7293 2.3 Electrical specifications Electrical characteristics The specifications given here were obtained with the conditions VS = ±40 V, RL = 8 Ω, Rg = 50 Ω, Tamb = 25 °C, f = 1 kHz unless otherwise specified. Table 4. . Electrical characteristics Symbol Parameter Test conditions Min Typ Max Unit VS Supply range - ±12 - ±50 V Iq Quiescent current - - 50 100 mA I b Input bias current - - 0.3 1 µA VOS Input offset voltage - -10 - 10 mV IOS Input offset current - - - 0.2 µA d = 1%, RL = 4 Ω, VS = ±29 V 75 80 80 - W d = 10%, RL = 4Ω, VS = ±29 V 90 100 100 - W PO = 5 W, f = 1 kHz - 0.005 - % PO = 0.1 to 50 W, f = 20 Hz to 15 kHz - - 0.1 % PO d Continuous output power Total harmonic distortion (1) ISC Current limiter threshold VS ≤ ±40 V - 6.5 - A SR Slew rate - 5 10 - V/µs GV Open loop voltage gain - - 80 - dB - 29 30 31 dB A = curve - 1 - µV f = 20 Hz to 20 kHz - 3 10 µV (2) GV Closed loop voltage gain eN Total input noise Ri Input resistance - 100 - - kΩ SVR Supply voltage rejection f = 100 Hz, Vripple = 0.5 V RMS - 75 - dB Device mutes - 150 - TS Thermal protection °C Device shuts down - 160 - °C Standby function (ref. to to pin 1) VST on Standby on threshold - - - 1.5 V VST off Standby off threshold - 3.5 - - V ATTst-by Standby attenuation - 70 90 - dB Iq st-by Quiescent current @ standby - - 0.5 1 mA Mute function (ref. to pin 1) VMon Mute on threshold - - - 1.5 V VMoff Mute off threshold - 3.5 - - V ATTmute Mute attenuatIon - 60 80 - dB Doc ID 6744 Rev 8 5/21 Electrical specifications Table 4. TDA7293 Electrical characteristics (continued) Symbol Parameter Test conditions Min Typ Max Unit Clip detector Duty ICLEAK Duty cycle ( pin 5) - d = 1%, RPULLUP = 10 kΩ to 5 V - 10 - % d = 10%, RPULLUP = 10 kΩ to 5 V 30 40 50 % PO = 50 W - - 3 µA Slave function pin 4 (ref. to pin 8) VSlave Slavethreshold - - - 1 V VMaster Master threshold - 3 - - V 1. Tested with optimized applications board (see fig. 3) 2. GVmin ≥ 26dB Note: Pin 11 only for modular connection. Max external load 1 MΩ / 10 pF, only for test purposes Figure 3. 6/21 Typical application PCB and component layout Doc ID 6744 Rev 8 TDA7293 3 Circuit description Circuit description In consumer electronics, an increasing demand has arisen for very high power monolithic audio amplifiers able to match, with a low cost, the performance obtained from the best discrete designs. The task of realizing this linear integrated circuit in conventional bipolar technology is made extremely difficult by the occurence of 2nd breakdown phoenomenon. It limits the safe operating area (SOA) of the power devices, and, as a consequence, the maximum attainable output power, especially in presence of highly reactive loads. Moreover, full exploitation of the SOA translates into a substantial increase in circuit and layout complexity due to the need of sophisticated protection circuits. To overcome these substantial drawbacks, the use of power MOS devices, which are immune from secondary breakdown is highly desirable. The device described has therefore been developed in a mixed bipolar-MOS high voltage technology called BCDII 100/120. 3.1 Output Stage The main design task in developping a power operational amplifier, independently of the technology used, is that of realization of the output stage. The solution shown as a principle shematic by Fig6 represents the DMOS unity - gain output buffer of the TDA7293. Figure 4. Schematic of a DMOS unity-gain buffer This large-signal, high-power buffer must be capable of handling extremely high current and voltage levels while maintaining acceptably low harmonic distortion and good behaviour over frequency response; moreover, an accurate control of quiescent current is required. A local linearizing feedback, provided by differential amplifier A, is used to fullfil the above requirements, allowing a simple and effective quiescent current setting. Proper biasing of the power output transistors alone is however not enough to guarantee the absence of crossover distortion. Doc ID 6744 Rev 8 7/21 Circuit description TDA7293 While a linearization of the DC transfer characteristic of the stage is obtained, the dynamic behaviour of the system must be taken into account. A significant aid in keeping the distortion contributed by the final stage as low as possible is provided by the compensation scheme, which exploits the direct connection of the Miller capacitor at the amplifier’s output to introduce a local AC feedback path enclosing the output stage itself. 3.2 Protection In designing a power IC, particular attention must be reserved to the circuits devoted to protection of the device from short circuit or overload conditions. Due to the absence of the 2nd breakdown phenomenon, the SOA of the power DMOS transistors is delimited only by a maximum dissipation curve dependent on the duration of the applied stimulus. In order to fully exploit the capabilities of the power transistors, the protection scheme implemented in this device combines a conventional SOA protection circuit with a novel local temperature sensing technique which " dynamically" controls the maximum dissipation. In addition to the overload protection described above, the device features a thermal shutdown circuit which initially puts the device into a muting state (@ Tϕ = 150 °C) and then into stand-by (@ Tj = 160 °C). Full protection against electrostatic discharges on very pin is included. 3.3 Other Features The device is provided with both standby and mute functions, independently driven by two CMOS logic compatible input pins. The circuits dedicated to the switching on and off of the amplifier have been carefully optimized to avoid any kind of uncontrolled audible transient at the output. The sequence that we recommend during the on/off transients is shown in Figure 8. The application of figure 9 shows the possibility of sing only one command for both st-by and mute functions. On both the pins, the maximum applicable range corresponds to the operating supply voltage. 8/21 Doc ID 6744 Rev 8 TDA7293 Circuit description Figure 5. Suggested turn-on/off sequence +Vs (V) +40 -40 -Vs VIN (mV) VST-BY PIN #9 (V) 5V VMUTE PIN #10 (V) 5V IQ (mA) VOUT (V) OFF ST-BY PLAY ST-BY MUTE OFF MUTE D98AU817 Figure 6. Single signal standby/mute control circuit MUTE MUTE/ ST-BY STBY 20K 10K 30K 1N4148 10µF 10µF D93AU014 Doc ID 6744 Rev 8 9/21 Applications information TDA7293 4 Applications information 4.1 Applications suggestions The recommended values of the external components are those shown on the application circuit of Figure 1 on page 1. Different values can, however, be used and the following table could be useful when choosing alternative values. Table 5. Component Choosing alternative component values Suggested value Larger than suggested Purpose Smaller than suggested Increase input impedance Decrease input impedance Decrease of gain Increase of gain Increase of gain Decrease of gain Standby time constant Larger Standby on/off time Smaller standby ON/OFF time; pop noise 10 kΩ Mute time constant Larger mute on/off time Smaller mute on/off time C1 0.47 µF Input DC decoupling - Higher low-frequency cutoff C2 22 µF Feedback DC decoupling - Higher low-frequency cutoff C3 10 µF Mute time constant Larger mute on/off time Smaller mute on/off time C4 10 µF Standby time constant Larger standby on/off time Smaller standby on/off time; pop noise C5 22 µF (3) x N Bootstrapping - Signal degradation at low frequency C6, C8 1000 µF Supply voltage bypass - - C7, C9 0.1 µF Supply voltage bypass - Danger of oscillation R1 (1) 22 kΩ Input resistance R2 680 Ω 22 kΩ Closed loop gain, set to 30 dB (2) R4 22 kΩ R5 R3 (1) 1. R1 = R3 for pop optimization 2. Closed loop gain has to be ³ 26dB 3. Multiply this value by the number, N, of modular parts connected Figure 7. Slave function: pin 4 (Ref to pin 8) Note: If in the application the speakers are connected via long wires, it is a good rule MASTER to add, between the output and GND, a -VS +3V boucherot cell in order to avoid dangerous spurious oscillations if the speakers UNDEFINED -VS +1V terminal are shorted. The suggested boucherot resistor is SLAVE -VS 3.9Ω/2W and the capacitor is 1µF. D98AU821 10/21 Doc ID 6744 Rev 8 TDA7293 4.2 Applications information High efficiency Constraints of implementing high power solutions are the power dissipation and the size of the power supply. These are both due to the low efficiency of conventional AB class amplifier approaches. The circuit below in Figure 8 is a high efficiency amplifier which can be adopted for both hi-fi and car-radio applications. The TDA7293 is a monolithic MOS power amplifier which can be operated with a 100-V supply (120 V with no signal applied) while delivering output currents up to ±6.5 A. This allows the use of this device as a very high-power amplifier (up to 180 W peak power with THD = 10% and RL = 4 Ω); the only drawback is the power dissipation, hardly manageable in the above power range. The typical junction-to-case thermal resistance of the TDA7293 is 1 °C/W (max = 1.5 °C/W). In worst case conditions, to avoid the chip temperature exceeding 150 °C the thermal resistance of the heatsink must be 0.038 °C/W (at a maximum ambient temperature of 50 °C). As the above value is pratically unreachable, a high efficiency system is needed in those cases where the continuous average output power is higher than 50 to 60 W. The TDA7293 was designed to work also in a higher efficiency way. For this reason there are four power supply pins: two intended for the signal part and two for the power part. T1 and T2 are two power transistors that only operate when the output power reaches a certain threshold (for example, 20 W). If the output power increases, these transistors are switched on during the portion of the signal where more output voltage swing is needed, thus "bootstrapping" the power supply pins (13 and 15). The current generators formed by T4, T7, zener diodes Z1, Z2 and resistors R7, R8 define the minimum drop across the power MOS transistors of the TDA7293. L1, L2, L3 and the snubbers C9, R1 and C10, R2 stabilize the loops formed by the "bootstrap" circuits and the output stage of the TDA7293. By considering again a maximum average output power (music signal) of 20 W, in case of the high efficiency application, the thermal resistance value needed from the heatsink is 2.2 °C/W (with VS = ±50 V and RL = 8 Ω). All components (TDA7293 and power transistors T1 and T2) can be placed on a 1.5 °C/W heatsink, with the power darlingtons electrically insulated from the heatsink. Since the total power dissipation is less than that of a usual class AB amplifier, additional cost savings can be obtained while optimizing the power supply, even with a large heatsink. 4.3 Bridge application Another application suggestion is the bridge configuration, where two TDA7293 are used. In this application, the value of the load must not be lower than 8 Ω for dissipation and current capability reasons. A suitable field of application includes hi-fi/TV subwoofer realizations. The main advantages offered by this solution are: z High power performance with limited supply voltage level. z Considerably higher output power even with high load values, such as 16 Ω. With RL = 8 Ω and VS = ±25 V, the maximum output power obtainable is 150 W, whilst with RL = 16 Ω and VS = ±40 V, the maximum Pout is 200 W. Doc ID 6744 Rev 8 11/21 Applications information 4.4 TDA7293 Modular application (ref. figure 12) The modular application is where several devices operate in parallel. The modular application allows very high power be delivered to very low-impedance loads. In this type of application one device acts as a master and the others as slaves. The slave power stages are driven by the master device and work in parallel together while the input and the gain stages of the slave devices are disabled. The figure below shows the connections required to configure two devices to work together. 4.5 z The master chip connections are the same as the normal single ones. z The outputs can be connected together without the need of any ballast resistor. z The slave SGND pin must be tied to the negative supply. z The slave STANDBY and MUTE pins must be connected to the master STANDBY and MUTE pins. z The bootstrap lines must be connected together and the bootstrap capacitor must be increased: for N devices the bootstrap capacitor must be 22 µF times N. z The slave IN pin must be connected to the negative supply. Bootstrap capacitor For compatibility purpose with the previous devices of the family, the bootstrap capacitor can be connected either between the bootstrap pin (6) and the output pin (14) or between the bootstrap pin (6) and the bootstrap loader pin (12). When the bootstrap is connected between pins 6 and 14 the maximum supply voltage in the presence of an output signal is limited to 100 V, due the bootstrap capacitor overvoltage. When the bootstrap is connected between pins 6 and 12 the maximum supply voltage extends to the full voltage that the technology can stand, in this case 120 V. This is accomplished by the clamp introduced at the bootstrap loader pin (12). This pin follows the output voltage up to 100 V and remains clamped at 100 V for higher output voltages. This feature lets the output voltage swing up to a gate-source voltage from the positive supply (VS -3 to 6 V). 12/21 Doc ID 6744 Rev 8 TDA7293 Applications information Figure 8. High-efficiency applications circuit +50V D6 1N4001 T1 BDX53A T3 BC394 R4 270 D1 BYW98100 +25V R17 270 L1 1µH D3 1N4148 C12 330nF R20 20K C1 1000µF 63V C3 100nF C5 1000µF 35V C7 100nF R22 10K C9 330nF IN C2 1000µF 63V 13 TDA7293 C13 10µF 9 ST-BY R21 20K 7 2 4 PLAY GND C4 100nF C6 1000µF 35V R23 10K C8 100nF R2 2 C10 330nF D5 1N4148 R15 10K 10 C14 10µF D2 BYW98100 -25V D7 1N4001 R6 20K C11 22µF R7 3.3K L3 5µH OUT R18 270 C15 22µF R8 3.3K 12 8 C16 1.8nF 14 6 1 R3 680 R16 13K R13 20K R14 30K T5 BC393 Z1 3.9V 3 R12 13K R1 2 R5 270 T4 BC393 C17 1.8nF Pot 15 Z2 3.9V L2 1µH D4 1N4148 T7 BC394 R19 270 T2 BDX54A T6 BC393 R9 270 T8 BC394 R10 270 R11 20K -50V D97AU807C Figure 9. PCB and component layout of fig. 8 Doc ID 6744 Rev 8 13/21 Applications information TDA7293 Figure 10. PCB - solder side of the Fig 9 Figure 11. Modular application circuit +Vs C7 100nF C6 1000µF R3 22K MASTER BUFFER DRIVER +Vs C2 22µF R2 680Ω C1 470nF IN- 2 IN+ 3 +PWVs 11 7 13 - R1 22K VMUTE R5 10K SGND 4 MUTE 10 STBY 9 OUT 12 BOOT LOADER 6 MUTE VSTBY 14 + THERMAL SHUTDOWN STBY R4 22K C4 10µF S/C PROTECTION 1 8 15 STBY-GND -Vs -PWVs C9 100nF C3 10µF 5 C10 100nF R7 2Ω C5 47µF BOOTSTRAP CLIP DET C8 1000µF -Vs +Vs C7 100nF C6 1000µF BUFFER DRIVER +Vs IN- 2 IN+ 3 SGND 4 MUTE 10 7 +PWVs 13 11 - SLAVE 9 STBY OUT 12 BOOT LOADER 6 MUTE THERMAL SHUTDOWN STBY S/C PROTECTION 1 8 15 STBY-GND -Vs -PWVs C9 100nF C8 1000µF -Vs 14/21 14 + Doc ID 6744 Rev 8 5 BOOTSTRAP D97AU808D TDA7293 Applications information Figure 12. Modular application PCB and component layout (component side) Figure 13. Modular application PCB and component layout (solder side) Doc ID 6744 Rev 8 15/21 Applications information TDA7293 Figure 14. Distortion vs output power Figure 15. Distortion vs output power Figure 16. Distortion vs frequency Figure 17. Modular application derating rload vs voltage supply (ref. fig. 12) Figure 18. Modular application Pd vs voltage supply (ref. fig. 12) Figure 19. Output power vs. supply voltage 16/21 Doc ID 6744 Rev 8 TDA7293 5 Package mechanical data Package mechanical data The TDA7293 comes with a choice of two 15-pin packages, Multiwatt15V and Multiwatt15H. The package sizes and outline drawings are given below. 5.1 Vertically-mounted package Figure 20. Multiwatt15V package DIM. mm MIN. TYP. inch MAX. MIN. TYP. A5 MAX. 0.197 B 2.65 C 1.6 D OUTLINE AND MECHANICAL DATA 0.104 0.063 1 0.039 E 0.49 0.55 0.019 F 0.66 0.75 0.026 0.022 G 1.02 1.27 1.52 0.040 0.050 0.060 G1 17.53 17.78 18.03 0.690 0.700 0.710 H1 19.6 0.030 0.772 H2 20.2 0.795 L 21.9 22.2 22.5 0.862 0.874 0.886 L1 21.7 22.1 22.5 0.854 0.87 0.886 L2 17.65 18.1 0.695 L3 17.25 17.5 17.75 0.679 0.689 0.699 L4 10.3 10.7 10.9 0.406 0.421 0.429 0.191 0.713 L7 2.65 2.9 0.104 M 4.25 4.55 4.85 0.167 0.179 0.114 M1 4.73 5.08 5.43 0.186 0.200 S 1.9 2.6 0.075 0.102 S1 1.9 2.6 0.075 0.102 Dia1 3.65 3.85 0.144 0.152 0.214 Multiwatt15 (Vertical) 0016036 J Doc ID 6744 Rev 8 17/21 Package mechanical data 5.2 TDA7293 Horizontally-mounted package Figure 21. Multiwatt15H outline 18/21 Doc ID 6744 Rev 8 TDA7293 Package mechanical data Table 6. Multiwatt15H dimensions Dimension in mm Dimension in inch Ref Notes Min Typ Max Min Typ Max A - - 5.00 - - 0.197 - B - - 2.65 - - 0.104 - C - - 1.60 - - 0.063 - E 0.49 - 0.55 0.019 - 0.022 - F 0.66 - 0.75 0.026 - 0.030 - G 1.02 1.27 1.52 0.040 0.050 0.060 - G1 17.53 17.78 18.03 0.690 0.700 0.710 - H1 19.60 - 20.20 0.772 - 0.795 - H2 19.60 - 20.20 0.772 - 0.795 - L1 17.80 18.00 18.20 0.701 0.709 0.717 - L2 2.30 2.50 2.80 0.091 0.098 0.110 - L3 17.25 17.50 17.75 0.679 0.689 0.699 - L4 10.30 10.70 10.90 0.406 0.421 0.429 - L5 2.70 3.00 3.30 0.106 0.118 0.130 - L7 2.65 - 2.90 0.104 - 0.114 - N - - - - - - - P - - - - - - - R - 1.50 - - 0.059 - - R1 - - - - - - - S 1.90 - 2.60 0.075 - 0.102 - S1 1.90 - 2.60 0.075 - 0.102 - V - - - - - - - Diam.1 3.65 - 3.85 0.144 - 0.152 - In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 6744 Rev 8 19/21 Revision history 6 TDA7293 Revision history Table 7. 20/21 Document revision history Date Revision Jan-2004 7 Aug-2004 7.1 24-Sep-2010 8 Changes First Issue in EDOCS Stylesheet update. No content change Updated package dimensions for Multiwatt15H in Table 6 on page 19 Updated presentation throughout document. Doc ID 6744 Rev 8 TDA7293 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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