SPN3009 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3009 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN3009 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS z High Frequency Synchronous Buck Converter z DC/DC Power System z Load Switch FEATURES PIN CONFIGURATION 30V/30A, RDS(ON)= 7.5mΩ@VGS=10V 30V/15A,RDS(ON)= 11.0mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252 package design TO-252 PART MARKING 2011/08/22 Ver.2 Page 1 SPN3009 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 S Source 3 D Drain ORDERING INFORMATION Part Number Package Part SPN3009T252RGB TO-252 ※ SPN3009T252RGB : Tape Reel ; Pb – Free ; Halogen - Free Marking SPN3009 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current TA=25℃ TA=100℃ ID 51 36 A Pulsed Drain Current IDM 120 A Avalanche Current IAS 34 A EAS 130 mJ PD 2.42 W TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient (t≦10s) RθJA 62 ℃/W Single Pulse Avalanche Energy Power Dissipation TA=25℃ Operating Junction Temperature ELECTRICAL CHARACTERISTICS 2011/08/22 Ver.2 Page 2 SPN3009 N-Channel Enhancement Mode MOSFET (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance RDS(on) Forward Transconductance gfs Diode Forward Voltage VSD Single Pulse Avalanche Energy EAS 30 1.0 VDS=0V,VGS=±20V VDS=24V,VGS=0V VDS=24V,VGS=0V, TJ=55℃ ±100 1 5 VDS≥5V,VGS =10V VGS= 10V,ID=30A VGS=4.5V,ID=15A VDS=5V,ID=30A IS=1A,VGS =0V VDD=25V, L=0.1mH, IAS=20A V 2.5 7.5 11 42 nA uA 51 A 9 13.5 mΩ S 1 45 V mJ Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time VDS=15V,VGS=4.5V ID= 15A td(off) tf nC 4.2 4 VDS=15VGS=0V f=1MHz td(on) tr 10.6 VDD=15V, ID=15A,VGEN=10V RG=3.3Ω 1127 pF 194 78 6.4 13 70 127 22.5 45 8 18 TYPICAL CHARACTERISTICS 2011/08/22 Ver.2 Page 3 nS SPN3009 N-Channel Enhancement Mode MOSFET Fig. 1 Typical Output Characteristics Fig. 2 Transfer Characteristics Fig. 3 On-Resistance vs Gate voltage Fig. 4 Gate Charge Characteristics Fig. 5 On-Resistance vs Junction Temp Fig. 6 Vgs vs Junction Temperature 2011/08/22 Ver.2 Page 4 SPN3009 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 7 Typical Capacitance Characteristics Fig. 8 Maximum Safe Operation Area Fig. 9 Effective Transient Thermal Impedance Fig. 10 Switching Time Waveform 2011/08/22 Ver.2 Fig. 11 Unclamped Inductive Waveform Page 5 SPN3009 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE 2011/08/22 Ver.2 Page 6 SPN3009 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2011 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2011/08/22 Ver.2 Page 7