SYNC-POWER SPN3009

SPN3009
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN3009 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology. The SPN3009 has
been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
APPLICATIONS
z High Frequency Synchronous Buck Converter
z DC/DC Power System
z Load Switch
FEATURES
PIN CONFIGURATION
‹
‹
‹
‹
‹
30V/30A, RDS(ON)= 7.5mΩ@VGS=10V
30V/15A,RDS(ON)= 11.0mΩ@VGS=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-252 package design
TO-252
PART MARKING
2011/08/22 Ver.2
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SPN3009
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
G
Gate
2
S
Source
3
D
Drain
ORDERING INFORMATION
Part Number
Package
Part
SPN3009T252RGB
TO-252
※ SPN3009T252RGB : Tape Reel ; Pb – Free ; Halogen - Free
Marking
SPN3009
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
30
V
Gate –Source Voltage
VGSS
±20
V
Continuous Drain Current
TA=25℃
TA=100℃
ID
51
36
A
Pulsed Drain Current
IDM
120
A
Avalanche Current
IAS
34
A
EAS
130
mJ
PD
2.42
W
TJ
150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient (t≦10s)
RθJA
62
℃/W
Single Pulse Avalanche Energy
Power Dissipation
TA=25℃
Operating Junction Temperature
ELECTRICAL CHARACTERISTICS
2011/08/22 Ver.2
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SPN3009
N-Channel Enhancement Mode MOSFET
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max. Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
Drain-Source On-Resistance
RDS(on)
Forward Transconductance
gfs
Diode Forward Voltage
VSD
Single Pulse Avalanche Energy
EAS
30
1.0
VDS=0V,VGS=±20V
VDS=24V,VGS=0V
VDS=24V,VGS=0V, TJ=55℃
±100
1
5
VDS≥5V,VGS =10V
VGS= 10V,ID=30A
VGS=4.5V,ID=15A
VDS=5V,ID=30A
IS=1A,VGS =0V
VDD=25V, L=0.1mH,
IAS=20A
V
2.5
7.5
11
42
nA
uA
51
A
9
13.5
mΩ
S
1
45
V
mJ
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Time
Turn-Off Time
VDS=15V,VGS=4.5V
ID= 15A
td(off)
tf
nC
4.2
4
VDS=15VGS=0V
f=1MHz
td(on)
tr
10.6
VDD=15V,
ID=15A,VGEN=10V
RG=3.3Ω
1127
pF
194
78
6.4
13
70
127
22.5
45
8
18
TYPICAL CHARACTERISTICS
2011/08/22 Ver.2
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nS
SPN3009
N-Channel Enhancement Mode MOSFET
Fig. 1 Typical Output Characteristics
Fig. 2 Transfer Characteristics
Fig. 3 On-Resistance vs Gate voltage
Fig. 4 Gate Charge Characteristics
Fig. 5 On-Resistance vs Junction Temp
Fig. 6 Vgs vs Junction Temperature
2011/08/22 Ver.2
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SPN3009
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
Fig. 7 Typical Capacitance Characteristics
Fig. 8 Maximum Safe Operation Area
Fig. 9 Effective Transient Thermal Impedance
Fig. 10 Switching Time Waveform
2011/08/22 Ver.2
Fig. 11 Unclamped Inductive Waveform
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SPN3009
N-Channel Enhancement Mode MOSFET
TO-252 PACKAGE OUTLINE
2011/08/22 Ver.2
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SPN3009
N-Channel Enhancement Mode MOSFET
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mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information
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©2011 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved
SYNC Power Corporation
7F-2, No.3-1, Park Street
NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
©http://www.syncpower.com
2011/08/22 Ver.2
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