TAT7461 75 Ω RF Amplifier Applications • • • • Distribution Amplifiers Multi-Dwelling Units Drop Amplifiers Single-ended Gain Block Product Features • • • • • • • • • • • • • • SOT-89 package Functional Block Diagram 50-1000 MHz bandwidth pHEMT device technology On-chip negative feedback providing excellent gain and return loss consistency. On-chip active bias for consistent bias current and repeatable performance. Simple external tuning allows excellent return loss. 6 V supply voltage 130 mA typical current consumption 16.1 dB typical gain 2.3 dB typical NF and < 2.6 dB up to 1000 MHz +39 dBm typical OIP3 +22 dBm typical P1dB Low distortion: CSO -72 dBc, CTB -88 dBc (26 dBmV/ch at output, 80 ch) SOT-89 package General Description The TAT7461 is a 75 Ω RF Amplifier designed for CATV applications to 1000 MHz. The balance of low noise, excellent distortion, and high-gain is applicable for drop and other distribution amplifiers. The TAT7461 is fabricated using 6-inch GaAs pHEMT technology to optimize performance and cost. It provides consistent gain and return loss from the use of extensive on-chip negative feedback. The TAT7461 also uses an onchip active bias for consistent bias current and repeatable performance. Simple external tuning allows the TAT7461 to achieve excellent return loss. 4 RF IN GND RFOUT Pin Configuration Pin # Symbol 1 2 3 4 RF IN GND RF OUT GND PADDLE Ordering Information Part No. Description TAT7461 75 Ω High linearity pHEMT amplifier TAT7461-EB Amplifier Evaluation Board (lead-free/RoHS compliant SOT-89 Pkg) Standard T/R size = 1000 pieces on a 7” reel. Preliminary Data Sheet: Rev C 04/30/10 © 2010 TriQuint Semiconductor, Inc. - 1 of 8 - Disclaimer: Subject to change without noticee Connecting the Digital World to the Global Network ® TAT7461 75 Ω RF Amplifier Specifications Absolute Maximum Ratings1 Recommended Operating Conditions Parameter Rating Parameter Storage Temperature Device Voltage Thermal Resistance2 (jnt to case) θjc -65 to +150 oC +10 V 42 oC/W VDD IDD TJ (for > 106 hours MTTF) Min Typ 100 6 130 Max Units 150 150 V mA o C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Notes: 1. Operation of this device outside the parameter ranges given above may cause permanent damage. 2. Refer to Thermal Analysis Report TAT7461, Report No. 30-0011 Rev B. Electrical Specifications Test conditions unless otherwise noted: 25 ºC, +6 V VDD Parameter Operational Frequency Range Gain Gain Flatness Noise Figure Input Return Loss Output Return Loss CSO CTB Output IP2 Output IP3 Vsupply IDD Conditions Min Typical 50 See Note 1. See Note 1. See Note 2. See Note 2. 100 16.1 +/- 0.3 2.3 23 23 -72 -88 +61 +39 +6 130 Max Units 1000 MHz dB dB dB dB dB dBc dBc dBm dBm V mA 150 Notes: 1. 26 dBmV/ch at output, 80 ch flat 2. At 5 dBm/tone 3. Electrical specifications are measured at specified test conditions. 4. Specifications are not guaranteed over all recommended operating conditions. Preliminary Data Sheet: Rev C 04/30/10 © 2010 TriQuint Semiconductor, Inc. - 2 of 8 - Disclaimer: Subject to change without noticee Connecting the Digital World to the Global Network ® TAT7461 75 Ω RF Amplifier Device Characterization Data S PARAMETER SCHEMATIC RF INPUT RF OUT TAT 7461 1 Measured in 50 ohms Conversion to 75 ohms done in CAD package Biasing done through Agilent 8753 Test Set S-Parameter Data VDD = +6 V, IDD = 130 mA De-Embedded S-Parameters 0 6 S21 S22 5.5 4.5 4 3.5 3 2.5 K 2 S11, S12, S22 (dB) -5 5 K Factor S21 (dB) De-Embedded S-Parameters 20 18 16 14 12 10 8 6 4 2 0 S11 -10 -15 -20 -25 S12 -30 1.5 1 0 1 2 3 Freq (GHz) 4 Preliminary Data Sheet: Rev C 04/30/10 © 2010 TriQuint Semiconductor, Inc. 5 -35 0 6 - 3 of 8 - 1 2 3 Freq (GHz) 4 5 6 Disclaimer: Subject to change without noticee Connecting the Digital World to the Global Network ® TAT7461 75 Ω RF Amplifier Application Circuit 50-1000 MHz APPLICATION VDD +6v SCHEMATIC L2 C4 C1 L4 RF INPUT TAT 7461 C3 L1 L3 C2 RF OUT 1 Notes: 1. See PC Board Layout, page 6 for more information. Bill of Material Ref. Desg. U1 L1, L2 L3 L4 C1 C2 C3, C4 J1, J2 Value Description Manufacturer Part Number 880 nH 5.1 nH 2.7 nH 1000 pF 120 pF 0.01 uF 75 Ω High Linearity pHEMT Amplifier Chip Coil, Vertical Wire Wound Ferrite, 1206, 30 % Ceramic Chip Ind., Wire-wound, 0402, 5 % Ceramic Chip Ind., Wire-wound, 0402, 5 % Ceramic Chip Cap., 0402, 50 V, 10 %, X7R Ceramic Chip Cap., 0402, 50 V, 5 %, NPO Ceramic Chip Cap., 0402, 16 V, 10 %, X7R 75 Ω F connector TriQuint Murata1 Coilcraft Coilcraft AVX1 AVX1 AVX1 Lighthorse1 TAT7461 LQH31HNR88K 0402CS-5N1XJLW 0402CS-2N7XJLW 04025C102KAT2A 04025A121JAT2A 0402YC103KAT FSF55MGT-P-10A Notes: 1. Or equivalent. Preliminary Data Sheet: Rev C 04/30/10 © 2010 TriQuint Semiconductor, Inc. - 4 of 8 - Disclaimer: Subject to change without noticee Connecting the Digital World to the Global Network ® TAT7461 75 Ω RF Amplifier Application Board Typical Performance VDD = +6 V, IDD = 130 mA Gain Input Return Loss 17.0 0 -400 C +250 C +850 C 16.8 16.6 -5 -400 C +250 C +850 C -10 S11 (dB) S21 (dB) 16.4 16.2 16.0 15.8 -15 -20 -25 15.6 -30 15.4 -35 15.2 -40 15.0 0 325 650 Freq (MHz) 975 1300 0 325 CSO & CTB 1300 0 CSO -400 C CSO +250 C CSO +850 C -5 -400 C +250 C +850 C -10 S22 (dB) -60 CSO & CTB (dBc) 975 Output Return Loss 80 ch NTSC @ +32 dBmV/ch FLAT Output -50 650 Freq (MHz) -70 -80 -15 -20 -25 CTB -400 C CTB +250 C CTB +850 C -90 -30 -35 -100 -40 0 100 200 300 Freq (MHz) 400 500 600 0 325 650 Freq (MHz) 975 1300 Noise Figure 4 -400 C +250 C +850 C 3.5 3 NF (dB) 2.5 2 1.5 1 0.5 0 0 Preliminary Data Sheet: Rev C 04/30/10 © 2010 TriQuint Semiconductor, Inc. 250 500 Freq (MHz) - 5 of 8 - 750 1000 Disclaimer: Subject to change without noticee Connecting the Digital World to the Global Network ® TAT7461 75 Ω RF Amplifier Applications Information PC Board Layout Core is .062” FR-4, єr = 4.7. Metal layers are 1-oz copper. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. For further technical information, refer to: http://www.triquint.com/TAT7461 Mechanical Information Package Information and Dimensions This package is lead-free/RoHS-compliant. The plating material on the leads is 100 % Matte Tin. It is compatible with both lead-free (maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes. The TAT7461 will be marked with a “TAT7461” designator and an 8 digit alphanumeric lot code (XXXXYYWW). The first four digits are the lot code (XXXX). The last four digits are a date code consisting of the year and work week (YYWW) of assembly. Preliminary Data Sheet: Rev C 04/30/10 © 2010 TriQuint Semiconductor, Inc. - 6 of 8 - Disclaimer: Subject to change without noticee Connecting the Digital World to the Global Network ® TAT7461 75 Ω RF Amplifier Mounting Configuration Notes: 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35 mm (#80/.0135”) diameter drill and have a final, plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. RF trace width depends upon the PC board material and construction. 4. All dimensions are in millimeters (inches). Angles are in degrees. Product Compliance Information ESD Information Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260 °C. ESD Rating: Value: Test: Standard: Class 1 A Passes ≥ 450 V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes ≥ 1000 V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). MSL Rating Level 3 at +260 °C convection reflow. The part is rated Moisture Sensitivity Level 3 at 260 °C per JEDEC standard IPC/JEDEC J-STD-020. Preliminary Data Sheet: Rev C 04/30/10 © 2010 TriQuint Semiconductor, Inc. - 7 of 8 - Disclaimer: Subject to change without noticee Connecting the Digital World to the Global Network ® TAT7461 75 Ω RF Amplifier Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: Fax: +1.707.526.4498 +1.707.526.1485 For technical questions and application information: Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Preliminary Data Sheet: Rev C 04/30/10 © 2010 TriQuint Semiconductor, Inc. - 8 of 8 - Disclaimer: Subject to change without noticee Connecting the Digital World to the Global Network ®