TRIQUINT TAT7461

TAT7461
75 Ω RF Amplifier
Applications
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Distribution Amplifiers
Multi-Dwelling Units
Drop Amplifiers
Single-ended Gain Block
Product Features
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SOT-89 package
Functional Block Diagram
50-1000 MHz bandwidth
pHEMT device technology
On-chip negative feedback providing excellent gain
and return loss consistency.
On-chip active bias for consistent bias current and
repeatable performance.
Simple external tuning allows excellent return loss.
6 V supply voltage
130 mA typical current consumption
16.1 dB typical gain
2.3 dB typical NF and < 2.6 dB up to 1000 MHz
+39 dBm typical OIP3
+22 dBm typical P1dB
Low distortion: CSO -72 dBc, CTB -88 dBc
(26 dBmV/ch at output, 80 ch)
SOT-89 package
General Description
The TAT7461 is a 75 Ω RF Amplifier designed for CATV
applications to 1000 MHz. The balance of low noise,
excellent distortion, and high-gain is applicable for drop
and other distribution amplifiers.
The TAT7461 is fabricated using 6-inch GaAs pHEMT
technology to optimize performance and cost. It provides
consistent gain and return loss from the use of extensive
on-chip negative feedback. The TAT7461 also uses an onchip active bias for consistent bias current and repeatable
performance. Simple external tuning allows the TAT7461
to achieve excellent return loss.
4
RF IN
GND
RFOUT
Pin Configuration
Pin #
Symbol
1
2
3
4
RF IN
GND
RF OUT
GND PADDLE
Ordering Information
Part No.
Description
TAT7461
75 Ω High linearity pHEMT amplifier
TAT7461-EB
Amplifier Evaluation Board
(lead-free/RoHS compliant SOT-89 Pkg)
Standard T/R size = 1000 pieces on a 7” reel.
Preliminary Data Sheet: Rev C 04/30/10
© 2010 TriQuint Semiconductor, Inc.
- 1 of 8 -
Disclaimer: Subject to change without noticee
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TAT7461
75 Ω RF Amplifier
Specifications
Absolute Maximum Ratings1
Recommended Operating Conditions
Parameter
Rating
Parameter
Storage Temperature
Device Voltage
Thermal Resistance2 (jnt to case) θjc
-65 to +150 oC
+10 V
42 oC/W
VDD
IDD
TJ (for > 106 hours MTTF)
Min
Typ
100
6
130
Max Units
150
150
V
mA
o
C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Notes:
1. Operation of this device outside the parameter ranges
given above may cause permanent damage.
2. Refer to Thermal Analysis Report TAT7461, Report No.
30-0011 Rev B.
Electrical Specifications
Test conditions unless otherwise noted: 25 ºC, +6 V VDD
Parameter
Operational Frequency Range
Gain
Gain Flatness
Noise Figure
Input Return Loss
Output Return Loss
CSO
CTB
Output IP2
Output IP3
Vsupply
IDD
Conditions
Min
Typical
50
See Note 1.
See Note 1.
See Note 2.
See Note 2.
100
16.1
+/- 0.3
2.3
23
23
-72
-88
+61
+39
+6
130
Max
Units
1000
MHz
dB
dB
dB
dB
dB
dBc
dBc
dBm
dBm
V
mA
150
Notes:
1. 26 dBmV/ch at output, 80 ch flat
2. At 5 dBm/tone
3. Electrical specifications are measured at specified test conditions.
4. Specifications are not guaranteed over all recommended operating conditions.
Preliminary Data Sheet: Rev C 04/30/10
© 2010 TriQuint Semiconductor, Inc.
- 2 of 8 -
Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
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TAT7461
75 Ω RF Amplifier
Device Characterization Data
S PARAMETER
SCHEMATIC
RF
INPUT
RF
OUT
TAT
7461
1
Measured in 50 ohms
Conversion to 75 ohms done in CAD package
Biasing done through Agilent 8753 Test Set
S-Parameter Data
VDD = +6 V, IDD = 130 mA
De-Embedded S-Parameters
0
6
S21
S22
5.5
4.5
4
3.5
3
2.5
K
2
S11, S12, S22 (dB)
-5
5
K Factor
S21 (dB)
De-Embedded S-Parameters
20
18
16
14
12
10
8
6
4
2
0
S11
-10
-15
-20
-25
S12
-30
1.5
1
0
1
2
3
Freq (GHz)
4
Preliminary Data Sheet: Rev C 04/30/10
© 2010 TriQuint Semiconductor, Inc.
5
-35
0
6
- 3 of 8 -
1
2
3
Freq (GHz)
4
5
6
Disclaimer: Subject to change without noticee
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TAT7461
75 Ω RF Amplifier
Application Circuit 50-1000 MHz
APPLICATION VDD
+6v
SCHEMATIC
L2
C4
C1
L4
RF
INPUT
TAT
7461
C3
L1
L3
C2
RF
OUT
1
Notes:
1. See PC Board Layout, page 6 for more information.
Bill of Material
Ref. Desg.
U1
L1, L2
L3
L4
C1
C2
C3, C4
J1, J2
Value
Description
Manufacturer Part Number
880 nH
5.1 nH
2.7 nH
1000 pF
120 pF
0.01 uF
75 Ω High Linearity pHEMT Amplifier
Chip Coil, Vertical Wire Wound Ferrite, 1206, 30 %
Ceramic Chip Ind., Wire-wound, 0402, 5 %
Ceramic Chip Ind., Wire-wound, 0402, 5 %
Ceramic Chip Cap., 0402, 50 V, 10 %, X7R
Ceramic Chip Cap., 0402, 50 V, 5 %, NPO
Ceramic Chip Cap., 0402, 16 V, 10 %, X7R
75 Ω F connector
TriQuint
Murata1
Coilcraft
Coilcraft
AVX1
AVX1
AVX1
Lighthorse1
TAT7461
LQH31HNR88K
0402CS-5N1XJLW
0402CS-2N7XJLW
04025C102KAT2A
04025A121JAT2A
0402YC103KAT
FSF55MGT-P-10A
Notes:
1. Or equivalent.
Preliminary Data Sheet: Rev C 04/30/10
© 2010 TriQuint Semiconductor, Inc.
- 4 of 8 -
Disclaimer: Subject to change without noticee
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TAT7461
75 Ω RF Amplifier
Application Board Typical Performance
VDD = +6 V, IDD = 130 mA
Gain
Input Return Loss
17.0
0
-400
C
+250 C
+850 C
16.8
16.6
-5
-400 C
+250 C
+850 C
-10
S11 (dB)
S21 (dB)
16.4
16.2
16.0
15.8
-15
-20
-25
15.6
-30
15.4
-35
15.2
-40
15.0
0
325
650
Freq (MHz)
975
1300
0
325
CSO & CTB
1300
0
CSO -400 C
CSO +250 C
CSO +850 C
-5
-400 C
+250 C
+850 C
-10
S22 (dB)
-60
CSO & CTB (dBc)
975
Output Return Loss
80 ch NTSC @ +32 dBmV/ch FLAT Output
-50
650
Freq (MHz)
-70
-80
-15
-20
-25
CTB -400 C
CTB +250 C
CTB +850 C
-90
-30
-35
-100
-40
0
100
200
300
Freq (MHz)
400
500
600
0
325
650
Freq (MHz)
975
1300
Noise Figure
4
-400 C
+250 C
+850 C
3.5
3
NF (dB)
2.5
2
1.5
1
0.5
0
0
Preliminary Data Sheet: Rev C 04/30/10
© 2010 TriQuint Semiconductor, Inc.
250
500
Freq (MHz)
- 5 of 8 -
750
1000
Disclaimer: Subject to change without noticee
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TAT7461
75 Ω RF Amplifier
Applications Information
PC Board Layout
Core is .062” FR-4, єr = 4.7. Metal layers are 1-oz copper.
The pad pattern shown has been developed and tested for
optimized assembly at TriQuint Semiconductor. The PCB
land pattern has been developed to accommodate lead and
package tolerances. Since surface mount processes vary
from company to company, careful process development
is recommended.
For further technical information, refer to:
http://www.triquint.com/TAT7461
Mechanical Information
Package Information and Dimensions
This package is lead-free/RoHS-compliant. The plating
material on the leads is 100 % Matte Tin. It is compatible
with both lead-free
(maximum 260 °C reflow
temperature) and lead (maximum 245 °C reflow
temperature) soldering processes.
The TAT7461 will be marked with a “TAT7461”
designator and an 8 digit alphanumeric lot code
(XXXXYYWW). The first four digits are the lot code
(XXXX). The last four digits are a date code consisting of
the year and work week (YYWW) of assembly.
Preliminary Data Sheet: Rev C 04/30/10
© 2010 TriQuint Semiconductor, Inc.
- 6 of 8 -
Disclaimer: Subject to change without noticee
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TAT7461
75 Ω RF Amplifier
Mounting Configuration
Notes:
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35 mm (#80/.0135”) diameter drill and
have a final, plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
3. RF trace width depends upon the PC board material and construction.
4. All dimensions are in millimeters (inches). Angles are in degrees.
Product Compliance Information
ESD Information
Solderability
Compatible with the latest version of J-STD-020, Lead
free solder, 260 °C.
ESD Rating:
Value:
Test:
Standard:
Class 1 A
Passes ≥ 450 V min.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating:
Value:
Test:
Standard:
Class IV
Passes ≥ 1000 V min.
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
MSL Rating
Level 3 at +260 °C convection reflow.
The part is rated Moisture Sensitivity Level 3 at 260 °C per
JEDEC standard IPC/JEDEC J-STD-020.
Preliminary Data Sheet: Rev C 04/30/10
© 2010 TriQuint Semiconductor, Inc.
- 7 of 8 -
Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
®
TAT7461
75 Ω RF Amplifier
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
TriQuint:
Web: www.triquint.com
Email: [email protected]
Tel:
Fax:
+1.707.526.4498
+1.707.526.1485
For technical questions and application information:
Email: [email protected]
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint
assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained
herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with
the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest
relevant information before placing orders for TriQuint products. The information contained herein or any use of such
information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property
rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
Preliminary Data Sheet: Rev C 04/30/10
© 2010 TriQuint Semiconductor, Inc.
- 8 of 8 -
Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
®