TAT7430B CATV 75 Ω pHEMT High Gain RF Amplifier Applications Single-ended and Push-pull Optical Receivers Low-noise Drop Amplifiers Distribution Amplifiers Multi-Dwelling Units Single-ended Gain Block SOT-89 package Product Features Functional Block Diagram High typical gain of 22 dB in application circuit On-chip active bias for consistent bias current and repeatable performance 50 – 1200 MHz bandwidth Low noise: typical NF < 2.2 dB to 1000MHz Flexible 5 V to 8 V biasing IDD(8V) = 190 mA typical in application circuit +41 dBm typical OIP3 +65 dBm typical OIP2 +22 dBm typical P1dB Low distortion: CSO -61 dBc, CTB -81 dBc (10 dBmV/ch at input, 80 ch NTSC flat) pHEMT device technology SOT-89 package RF IN General Description GND RFOUT Pin Configuration The TAT7430B is a low cost RF amplifier designed for applications from DC to 1200 MHz. The balance of low noise and distortion provides an ideal solution for a wide range of broadband amplifiers used in cable television applications. Pin # Symbol 1 2 3 4 RF IN GND RF OUT GND PADDLE It is particularly well suited for new home networks requiring higher gain for a large number of splits. In addition, the TAT7430B’s combination of high gain, low noise, and good return loss make it an excellent choice for optical receiver applications and low noise front ends. An internal bias circuit mitigates the effect of temperature and process variation. The bias current can be adjusted with an external resistor. It is able to work in low noise applications from a 5 V supply. Ordering Information The TAT7430B is fabricated using 6-inch GaAs pHEMT technology to optimize performance and cost. It provides excellent gain and return loss consistency inherent to the pHEMT process. Part No. Description TAT7430B 75 High linearity pHEMT amplifier TAT7430B-EB Amplifier evaluation board (lead-free/RoHS compliant SOT-89 Pkg) Standard T/R size = 1000 pieces on a 7” reel. Data Sheet: Rev B 03/08/11 © 2011 TriQuint Semiconductor, Inc. - 1 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TAT7430B CATV 75 Ω pHEMT High Gain RF Amplifier Specifications Absolute Maximum Ratings1 Parameter Storage Temperature Device Voltage Recommended Operating Conditions Rating Parameter -65 to +150 oC +10 V Min Vcc Icc TJ (for >106 hours MTTF) 1. Operation of this device outside the parameter ranges given above may cause permanent damage. Typ 5 Max Units 8 190 150 V mA o C Electrical Specifications Test conditions unless otherwise noted: 25ºC case temp, +8V Vsupply, DC to 1200 MHz Parameter Operational Frequency Range Gain Gain Flatness Noise Figure at 1 GHz Input Return Loss Output Return Loss P1dB Output IP3 Output IP2 CSO CTB Idd Thermal Resistance (jnc. to case) jc Conditions Min Typical 50 Max Units 1002 MHz dB dB dB dB dB dBm dBm dBm dBc dBc mA o C/W 22 +/- 0.5 2.0 -22 -18 +22 +41 +65 -61 -81 190 See Note 1. See Note 1. See Note 2. See Note 2. 32 Notes: 1. At -21 dBm/tone at input. 2. 10 dBmV/ch at input, 80 ch flat NTSC 3. Electrical specifications are measured at specified test conditions. 4. Specifications are not guaranteed over all recommended operating conditions. Data Sheet: Rev B 03/08/11 © 2011 TriQuint Semiconductor, Inc. - 2 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TAT7430B CATV 75 Ω pHEMT High Gain RF Amplifier Reference Design DC-1200 MHz Notes: 1. See PC Board Layout, page 5 for more information Bill of Material Ref Des Value Description Manufacturer Part Number U1 R1, R2 R3 R4 C1 C2 C3, C4, C6 C5 L1, L2 L3 L4 TriQuint various various various various various various various various various various Amplifier, SOT-89 20 Ω Thick Film Res., 1206, 1%, 1/4 W 15 kΩ Thick Film Res., 0402, 5%, 1/10 W 5.1 Ω Thick Film Res., 0402, 5%, 1/10 W 150 pF Ceramic Cap, 0603, COG, 16V, 5% 220 pF Ceramic Cap, 0402, COG, 16V, 5% 0.01 uF Ceramic Cap, 0603, X7R, 50V, 10% 47 pF Ceramic Cap, 0402, COG, 16V, 5% 500 nH Ferrite Ind., Vertical Wire-Wound, 1206, 10% 5.6 nH Ceramic Wire-Wound Ind, 0402, 5% 7.5 nH Ceramic Wire-Wound Ind, 0402, 5% Data Sheet: Rev B 03/08/11 © 2011 TriQuint Semiconductor, Inc. - 3 of 7 - TAT7430B Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TAT7430B CATV 75 Ω pHEMT High Gain RF Amplifier Application Board Typical Performance Case temperature noted on graphs. Vsupply = 8V, Icc=190 mA. Gain 25 23 -12 21 S11 (dB) S21 (dB) Input Return Loss -6 -40°C +85°C +25°C 19 17 +85°C +25°C −40°C -18 -24 -30 15 50 250 450 650 850 1050 -36 1250 50 250 Frequency (MHz) 850 1050 1250 +25°C +85°C −40°C -60 +85°C +25°C −40°C -12 CSO -55 CSO (dBc) S22 (dB) -6 -18 -24 -65 -70 -75 -30 -80 50 250 450 650 850 1050 1250 60 160 Frequency (MHz) +85°C +25°C −40°C 460 -82 2 +85°C 1 -86 -90 +25°C −40°C 0 60 160 260 360 460 560 50 Frequency (MHz) Data Sheet: Rev B 03/08/11 © 2011 TriQuint Semiconductor, Inc. 560 3 NF (dB) -78 360 Noise Figure 4 -74 260 Frequency (MHz) CTB -70 CTB (dBc) 650 Frequency (MHz) Output Return Loss 0 450 250 450 650 850 1050 1250 Frequency (MHz) - 4 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TAT7430B CATV 75 Ω pHEMT High Gain RF Amplifier Applications Information PC Board Layout Core is .062” FR-4, єr = 4.7 at 1 MHz. Metal layers are 1-oz copper. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. For further technical information, http://www.triquint.com/TAT7430B Data Sheet: Rev B 03/08/11 © 2011 TriQuint Semiconductor, Inc. Refer to - 5 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TAT7430B CATV 75 Ω pHEMT High Gain RF Amplifier Mechanical Information Package Information and Dimensions This package is lead-free/RoHS-compliant. The plating material on the leads is 100 % Matte Tin. It is compatible with both lead-free (maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes. The TAT7430B will be marked with a “TAT7430B” designator and an alphanumeric lot code. Mounting Configuration Notes: 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35 mm (#80/.0135”) diameter drill and have a final, plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. RF trace width depends upon the PC board material and construction. 4. All dimensions are in millimeters (inches). Angles are in degrees. Data Sheet: Rev B 03/08/11 © 2011 TriQuint Semiconductor, Inc. - 6 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TAT7430B CATV 75 Ω pHEMT High Gain RF Amplifier Product Compliance Information ESD Information Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260 °C. ESD Rating: Value: Test: Standard: Class 1B Passes 600 V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 2000 V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). MSL Rating Level 3 at +260 °C convection reflow JEDEC standard IPC/JEDEC J-STD-020. Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: Fax: +1.707.526.4498 +1.707.526.1485 For technical questions and application information: Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Data Sheet: Rev B 03/08/11 © 2011 TriQuint Semiconductor, Inc. - 7 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network®