TGA4706-FC 77 GHz Medium Power Amplifier Key Features • • • • Frequency Range: 76 - 83 GHz Psat: 14 dBm at 77 GHz Gain: 15 dB Bias: Vd = 3.5 V, Vg = +0.2 V, Idq = 125 mA Typical Technology: 0.13 um pHEMT with front-side Cu/Sn pillars Chip Dimensions: 1.86 x 1.37 x 0.38 mm • • Measured Performance Primary Applications Bias conditions: Vd = 3.5 V, Idq = 125 mA, Vg = +0.2 V Typical • • 16 Pout @ 77 GHz (dBm) 14 12 Product Description 10 8 6 4 2 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 Input Power (dBm) The TriQuint TGA4706-FC is a flip-chip medium power amplifier designed to operate at the automotive radar frequencies band. The TGA4706FC is designed using TriQuint’s proven 0.13 µm pHEMT process and front-side Cu / Sn pillar technology for simplified assembly and low interconnect inductance. Die reliability is enhanced by using TriQuint’s BCB polymeric passivation process. Gain The TGA4706-FC typically provides 14 dBm saturated output power with 15 dB small signal gain at 77 GHz. 5 IRL Lead-free and RoHS compliant. 0 ORL 20 15 Gain, IRL, ORL (dB) Automotive Radar E-Band Communication 10 -5 -10 -15 -20 -25 76 77 78 79 80 Frequency (GHz) 81 82 83 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] November 2009 © Rev C TGA4706-FC Table I Absolute Maximum Ratings 1/ Symbol Vd-Vg Parameter Value Drain to Gate Voltage 6V Vd Drain Voltage 4V Vg Gate Voltage Range Id Drain Current 240 mA Ig Gate Current 4 mA Pin Notes 2/ -2 to +0.45 V Input Continuous Wave Power 2/ 15 dBm 2/ 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. Table II Recommended Operating Conditions Symbol 1/ Parameter 1/ Value Vd Drain Voltage 3.5 V Vg Gate Voltage +0.2 V Idq Drain Current (Quiescent) 125 mA See assembly diagram for bias instructions. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] November 2009 © Rev C TGA4706-FC Table III RF Characterization Table Bias conditions: Vd = 3.5 V, Vg = +0.2 V, Idq = 125 mA Typical SYMBOL PARAMETER TEST CONDITIONS MINIMUM NOMINAL UNITS Gain Small Signal Gain f = 76-77 GHz 15 dB IRL Input Return Loss f = 76-77 GHz 4 dB ORL Output Return Loss f = 76-77 GHz 15 dB Psat Saturated Output Power f = 77 GHz 14 dBm Pout Output Power (Input Power=-3dBm) f = 77 GHz 12 dBm 9 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] November 2009 © Rev C TGA4706-FC Table IV Power Dissipation and Thermal Properties Parameter Test Conditions Maximum Power Dissipation Thermal Resistance, θjc Under RF Drive 1/ Value Notes Tbaseplate = 130.0°C Pd = 0.6 W Tchannel = 150°C Tm = 2.4E+7 Hrs 1/ 2/ Vd = 3.5 V Vg = +0.2 V Idq = 125 mA Pd = 0.438 W Tbaseplate = 85°C θjc = 33.3 (°C/W) Tchannel = 93.8°C Tm = 3.2E+10 Hrs Mounting Temperature Refer to Solder Reflow Profiles (pp 10) Storage Temperature -65 to 150°C For a median life of 2.4E+07 hours, Power Dissipation is limited to Pd(max) = (150°C – Tbase°C)/θjc. Channel operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. Median Lifetime (Tm) vs Channel Temperature 1.E+13 1.E+12 Median Lifetime (Hours) 2/ 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 FET11 25 50 75 100 125 150 175 200 Channel Temperature (°C) 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] November 2009 © Rev C TGA4706-FC Measured Data on Flipped Die on Carrier Board Bias conditions: Vd = 3.5 V, Vg = +0.2 V, Idq = 125 mA Typical 20 18 Gain (dB) 16 14 12 10 8 6 70 72 74 76 78 80 Frequency (GHz) 82 84 86 76 78 80 Frequency (GHz) 82 84 86 5 Return Loss (dB) 0 -5 -10 -15 -20 IRL -25 ORL -30 70 72 74 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] November 2009 © Rev C TGA4706-FC Measured Data on Flipped Die on Carrier Board Output Power (dBm) & Gain (dB) Bias conditions: Vd = 3.5 V, Vg = +0.2 V, Idq = 125 mA Typical 20 18 16 14 12 10 8 6 Pout @77 GHz 4 Gain @77 GHz 2 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 Input Power (dBm) 180 Drain Current (mA) 170 160 150 140 130 120 110 100 -10 -8 -6 -4 -2 0 2 4 Input Power (dBm) 6 8 10 12 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] November 2009 © Rev C TGA4706-FC Electrical Schematic Vd 100 pF 4, 5, 6 1 9 RF In RF Out TGA4706-FC 11, 12, 13 100 pF Vg Bias Procedures Bias-up Procedure Bias-down Procedure Vg set to -0.6 V Turn off RF supply Vd set to +3.5 V Reduce Vg to -0.6V. Ensure Id ~ 0 mA Adjust Vg more positive until Vg is +0.2 V. Id will be ~ 125 mA Turn Vd to 0 V Apply RF signal to input 7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] November 2009 © Rev C TGA4706-FC Mechanical Drawing 1.860 1.733 1.279 1.513 1.234 0.938 0.936 0.612 0.364 0.605 0.126 Drawing is for chip face-up 1.370 1.245 1.245 3 2 16 1 15 19 0.908 0.778 0.683 0.588 0.458 5 4 7 6 18 17 20 21 8 0.908 9 0.778 0.683 0.588 10 0.458 12 11 14 13 1.733 1.279 1.241 0.969 0.938 0.610 0.364 0.605 0.126 0.126 0.000 0.126 0.000 Units: millimeters Units: millimeters Thickness: 0.380 Die x,y size tolerance: +/- 0.050 Chip edge to pillar dimensions are shown to center of pillar Pillar # 1 RF IN 0.075 Ø Pillar # 9 RF OUT 0.075 Ø Pillar # 4 Vd1 0.075 Ø Pillar # 5 Vd2 0.075 Ø Pillar # 6 Vd3 0.075 Ø Pillar # 11 Vg3 0.075 Ø Pillar # 12 Vg2 0.075 Ø Pillar # 13 Vg1 0.075 Ø Pillar # 2, 8, 10, 15 RF CPW Ground 0.075 Ø Pillar # 3, 7, 14, 16, 17, 18, 19, 20, 21 DC Ground 0.075 Ø GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] November 2009 © Rev C TGA4706-FC Recommended Assembly Diagram Vg 100 pF RFin RFout 100 pF TGA4706-FC Die (flip-chip bonded) Vd Die is flip-chip soldered to a 15 mil thick alumina test substrate GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] November 2009 © Rev C TGA4706-FC Assembly Notes Component placement and die attach assembly notes: • Vacuum pencils and/or vacuum collets are the preferred method of pick up. • Air bridges must be avoided during placement. • Cu pillars on die are 65 um tall with a 22 um tall Sn solder cap. • Recommended board metallization is evaporated TiW followed by nickel/gold at pillar attach interface. Ni is the adhesion layer for the solder and the gold keeps the Ni from oxidizing. The Au should be kept to a minimum to avoid embrittlement; suggested Au / Sn mass ratio must not exceed 8%. • Au metallization is not recommended on traces due to solder wicking and consumption concerns. If Au traces are used, a physical solder barrier must be applied or designed into the pad area of the board. The barrier must be sufficient to keep the solder from undercutting the barrier. Reflow process assembly notes: • Minimum alloying temperatures 245 0C. • Repeating reflow cycles is not recommended due to Sn consumption on the first reflow cycle. • An alloy station or conveyor furnace with an inert atmosphere such as N2 should be used. • Dip copper pillars in “no-clean flip chip” flux prior to solder attach. Suggest using a high temperature flux. Avoid exposing entire die to flux. • If screen printing flux, use small apertures and minimize volume of flux applied. • Coefficient of thermal expansion matching between the MMIC and the substrate/board is critical for long-term reliability. • Devices must be stored in a dry nitrogen atmosphere. • Suggested reflow will depend on board material and density. Typical Reflow Profiles for TriQuint Cu / Sn Pillars Process Sn Reflow Ramp-up Rate 3 0C/sec Flux Activation Time and Temperature 60 – 120 sec @ 140 – 160 0C Time above Melting Point (245 0C) 60 – 150 sec Max Peak Temperature 300 0C Time within 5 0C of Peak Temperature 10 – 20 sec Ramp-down Rate 4 – 6 0C/sec Ordering Information Part Package Style TGA4706-FC GaAs MMIC Die GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] November 2009 © Rev C