TRIQUINT TQM879008

TQM879008
1.5-2.7GHz ½ W Digital Variable Gain Amplifier
Applications



3G / 4G Wireless Infrastructure
CDMA, WCDMA, LTE
Repeaters
28-pin 6x6mm leadless SMT package
22 NC
23 GND
24 GND
25 GND
26 GND
27 GND
1.5-2.7 GHz Frequency Range
41.1 dB Maximum Gain at 2.5 GHz
31.5 dB Gain Range in 0.5 dB Steps
+47.5 dBm Output IP3
+27.3 dBm Output P1dB
Fully Internally Matched Module
Integrated Blocking Capacitors, Bias Inductors
3-wire SPI Control Programming
LE 1
21 GND
S
P
I
DATA 2
DSA
20 GND
AMP2
CLK 3
Matching
19 GND
AMP3
18 GND
NC 4
GND 5
17 GND
Matching
RFIN 6
15 GND
Vcc_AMP3 14
GND 13
DC Biasing
GND 12
GND 9
Vcc_AMP1/
Vcc_AMP2 8
GND 11
DC Biasing
GND 7
General Description
16 RFOUT
AMP1
GND 10








Functional Block Diagram
28 Vcc_SPI
Product Features
Backside
Paddle - GND
Pin Configuration
The TQM879008 is a digital variable gain amplifier
(DVGA) featuring high linearity over the entire gain
control range. This amplifier module integrates two gain
blocks, a digital-step attenuator (DSA), and a high linearity
½ W amplifier. The module has the added feature of
integrating all matching components, bias chokes and
blocking capacitors. The internal 6-bit DSA provides a
31.5 dB gain control range in 0.5 dB steps, and is
controlled with a serial periphery interface (SPI TM).
The TQM879008 features variable gain from 10 dB to
41.1dB at 2.5 GHz, +47.5 dBm output IP3, and +27.3 dBm
P1dB. The module operates from a single +5V supply and
is available in a compact 28-pin 6x6 mm leadless SMT
package.
The TQM879008 is pin compatible with the TQM829007
(0.7-1.0GHz, 0.25W DVGA) and TQM879006 (1.42.7GHz, 0.25W DVGA). This allows one to size the right
type of device for specific system level requirements as
well as making the DVGA family ideal for applications
where a common PCB layout is used for different
frequency bands.
Pin #
Symbol
1
2
3
LE
DATA
CLK
4, 22
6
8
14
16
28
NC
RFIN
VCC_AMP1/VCC_AMP2
VCC_AMP3
RFOUT
VCC_SPI
All Other Pins
GND
Ordering Information
Part No.
Description
TQM879008
1.5-2.7 GHz Digital Variable Gain Amp
Fully Assembled Evaluation Board
TQM879008-PCB
Includes USB control board (EVH)
Standard T/R size = 2500 pieces on a 13” reel.
Data Sheet: Rev G 12/10/12
© 2012 TriQuint Semiconductor, Inc.
- 1 of 11-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TQM879008
1.5-2.7GHz ½ W Digital Variable Gain Amplifier
Specifications
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Parameter
Min
Typ
Storage Temperature
RF Input Power, CW, 50Ω,T = 25ºC
Vcc (pins 8, 14, 28)
Digital Input Voltage
-55 to 150 oC
+23 dBm
+5.5 V
Vcc+ 0.5V
Vcc (pins 8, 14, 28)
Case Temperature
Junction Temperature, TJ
4.75
-40
5
Max Units
5.25
85
170
V
C
o
C
o
TJ specified for >106 hours MTTF
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25ºC, +5Vcc, Maximum Gain State.
Parameter
Conditions
Operational Freq Range
Test Frequency
Gain
Gain Control Range
Accuracy Error
Control Interface
Input Return Loss
Output Return Loss
Noise Figure
Output P1dB
Output IP3
I/O Impedance
Supply Voltage
Supply Current
Thermal Resistance, jc
Min
Typ
1500
38
0.5 dB Step Size
All States, 3 wire SPI, 6 states
3-wire serial interface
Maximum Gain State
Pout = +11 dBm/tone, ∆f = 1MHz Spacing
Data Sheet: Rev G 12/10/12
© 2012 TriQuint Semiconductor, Inc.
- 2 of 11-
Units
2700
MHz
MHz
dB
44
31.5
±(0.3+5% of Attenuation setting) Max
6
16
14
3.9
+41
220
Module (junction to case)
2500
41.1
Max
+27.3
+47.5
50
+5
285
320
20.5
dB
dB
Bit
dB
dB
dB
dBm
dBm
Ohm
V
mA
o
C/W
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Connecting the Digital World to the Global Network
®
TQM879008
1.5-2.7GHz ½ W Digital Variable Gain Amplifier
J3-19
GND
J3-20
J3-18
Vcc_AMP
J3-17
J3-16
J3-15
J3-14
J3-13
J3-12
LE
CLK
DATA
J3-11
J3-10
J3-8
J3-9
J3-6
J3-7
J3-5
J3-4
J3-3
J3-2
GND
SPI_Vcc
J3-1
Application Circuit (TQM879008-PCB)
J3
C8
NC
GND
GND
GND
GND
GND
SPI_Vcc
0.1uF
SPI_LE
GND
SPI_DATA
GND
SPI_CLK
GND
U1
6X6_ 28PIN
NC
GND
C8
GND
Vcc_AMP3
GND
GND
GND
GND
J2
0
RF
Output
GND
J2
FB1
FB2
J1
J2
C2
C1
RF
Input
RF_OUT
GND
J1
C2
RF_IN
0
U1
GND
C1
J1
GND
J2
Vcc_AMP1/
AMP2
J1
FB2
FB1
0
C4
0
C4
10 uF
Notes:
1. For PCB Board Layout, see page 9 for more information.
2. All Components are of 0603 size unless stated otherwise.
3. For SPI Timing Diagram, see page 6.
4. 0 Ω jumpers may be replaced with copper traces in the target application layout.
5. Different ground pins are used for SPI (digital) and analog supply voltages.
6. The primary RF microstrip characteristic line impedance is 50 Ω.
7. The single power supply is used to provide supply voltage to AMP1, AMP2 and AMP3.
Bill of Material: TQM879008-PCB
Reference Desg.
Value
U1
Description
Manufacturer
Part Number
1.5 – 2.7 GHz DVGA
TriQuint
TQM879008
C8
0.1 uF
Cap, Chip, 0603, 16V, X7R, 10%
various
C4
10 uF
Cap, Chip, 0603, 6.3V, X5R, 20%
various
C1, C2, FB1, FB2
0Ω
Res, Chip, 0603, 1/16W, 5%
various
Typical Performance, Maximum Gain State
Frequency
GHz
1.5
1.9
2.1
2.3
2.5
2.7
Gain
Input Return Loss
Output Return Loss
Output P1dB
dB
dB
dB
dBm
dBm
41.7
14.6
6.2
+26.3
+43.7
41.8
13.2
9.2
+26.7
+40.3
41.7
11
11.7
+27.8
+40.4
41.5
12
13
+27.8
+43.5
41.1
16
14
+27.3
+48.5
41
20
12
+27
+45
dBm
V
mA
17.6
17.8
18.9
18.8
18.5
18
Output IP3 @ Pout = 11 dBm/tone, ∆f = 1 MHz
WCDMA channel power at 50dBc ACLR
Supply Voltage
Supply Current
Data Sheet: Rev G 12/10/12
© 2012 TriQuint Semiconductor, Inc.
- 3 of 11-
+5
285
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TQM879008
1.5-2.7GHz ½ W Digital Variable Gain Amplifier
Typical Performance Plots
Gain vs. Freq over Attenuation States
45
Gain vs. Freq over Temperature
45
Maximum Gain State
40
43
30
Gain (dB)
Gain (dB)
35
25
20
0dB
0.5dB
1dB
2dB
15
4dB
8dB
16dB
31.5dB
41
+85°C
+25°C
−40°C
39
37
10
Temp. = 25oC
5
1.5
1.7
1.9
2.1
2.3
35
2.5
2.7
1.5
1.7
1.9
Frequency (GHz)
S11 vs. Freq over Attenuation States
0
2.1
2.3
2.7
S11 vs. Freq over Temperature
0
Maximum Gain State
0dB
0.5dB
1dB
2dB
4dB
8dB
16dB
31.5dB
-5
+85°C
+25°C
−40°C
-5
S11 (dB)
-10
Gain (dB)
2.5
Frequency (GHz)
-15
-10
-15
-20
-20
-25
Temp. = 25oC
-30
-25
1.5
1.7
1.9
2.1
2.3
2.5
2.7
1.5
1.7
1.9
Frequency (GHz)
S22 vs. Freq over Attenuation States
0
2.1
2.3
2.5
2.7
Frequency (GHz)
S22 vs. Freq over Temperature
0
Maximum Gain State
Temp. = 25oC
S22 (dB)
Gain (dB)
+85°C
+25°C
−40°C
-5
-5
-10
-15
0dB
0.5dB
1dB
2dB
4dB
8dB
16dB
31.5dB
-10
-15
-20
-20
-25
-25
1.5
1.7
1.9
2.1
2.3
2.5
2.7
Data Sheet: Rev G 12/10/12
© 2012 TriQuint Semiconductor, Inc.
1.5
1.7
1.9
2.1
2.3
2.5
2.7
Frequency (GHz)
Frequency (GHz)
- 4 of 11-
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TQM879008
1.5-2.7GHz ½ W Digital Variable Gain Amplifier
OIP3 vs. Temperature
55
Max gain state
28
P1dB (dBm)
50
OIP3 (dBm)
P1dB vs. Temperature
29
+85°C
+25°C
−40°C
1 MHz Tone Spacing
Pout/Tone = 11dBm
45
40
27
26
+85°C
+25°C
−40°C
25
Max gain state
35
24
2.3
2.4
2.5
2.6
2.7
2.3
2.4
Frequency (GHz)
OIP3 vs. Frequency
55
1 MHz Tone Spacing
Pout/Tone = 11dBm
2.6
2.7
P1dB vs. Frequency
29
Max gain state
Max gain state
28
P1dB (dBm)
50
OIP3 (dBm)
2.5
Frequency (GHz)
45
40
27
26
25
35
24
1.5
1.7
1.9
2.1
2.3
2.5
2.7
1.5
1.7
Frequency (GHz)
2.1
2.3
2.5
2.7
Frequency (GHz)
ACLR vs. Output Power vs. Frequency
-45
1.9
Noise Figure vs. Frequency
6
WCDMA 3GPP TM 1+64 DPCH
5MHz offset, PAR = 10.2dB @ 0.01% probability
3.84MHz Bandwidth
Max gain state
+25°C
5
4
NF (dB)
ACLR (dBc)
-50
-55
3
2
1500MHz
-60
1900MHz
1
2100MHz
2300MHz
Max gain state
2600MHz
-65
0
15
16
17
18
19
Pout (dBm)
Data Sheet: Rev G 12/10/12
© 2012 TriQuint Semiconductor, Inc.
1.5
1.7
1.9
2.1
2.3
2.5
2.7
Frequency (GHz)
- 5 of 11-
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TQM879008
1.5-2.7GHz ½ W Digital Variable Gain Amplifier
Serial Control Interface
SERIN (MSB in First 6-Bit Word) Control Logic Truth Table
6-Bit Control Word to DSA
MSB
D5
1
1
1
1
1
1
0
0
D4
1
1
1
1
1
0
1
0
D3
1
1
1
1
0
1
1
0
D2
1
1
1
0
1
1
1
0
D1
1
1
0
1
1
1
1
0
LSB
D0
1
0
1
1
1
1
1
0
Attenuation
State
Reference : IL
0.5 dB
1 dB
2 dB
4 dB
8 dB
16 dB
31.5 dB
Any combination of the possible 64 states will provide an attenuation of approximately
the sum of bits selected
Serial Control Interface Timing Diagram
CLK is disabled when LE is high
D5-D0
MSB-LSB
D5-D0
MSB-LSB
LE
tPLO
CLK
SERIN
tSDSUP
Data Sheet: Rev G 12/10/12
© 2012 TriQuint Semiconductor, Inc.
tLESUP
tSDHLD
- 6 of 11-
tLEPW
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TQM879008
1.5-2.7GHz ½ W Digital Variable Gain Amplifier
Serial Control Timing Characteristics
Test conditions: 25ºC
Min
Parameter
Condition
Clock Frequency
LE Setup Time, tLESUP
LE Pulse Width, tLEPW
SERIN set-up time, tSDSUP
50% Duty Cycle
after last CLK rising edge
SERIN hold-time, tSDHLD
LE Pulse Spacing tLE
Propagation Delay tPLO
after CLK rising edge
LE to LE pulse spacing
LE to Parallel output valid
before CLK rising edge
Max
Units
10
MHz
ns
ns
ns
10
30
10
10
630
30
ns
ns
ns
Min
Max
Units
0
2.1
0.8
Vcc
V
V
-10
+10
µA
Serial Control DC Logic Characteristics
Test conditions: 25ºC
Parameter
Condition
Input Low Voltage, VIL
Input High Voltage, VIH
Input Current, IIH / IIL
Data Sheet: Rev G 12/10/12
© 2012 TriQuint Semiconductor, Inc.
On SERIN, LE and CLK
- 7 of 11-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TQM879008
1.5-2.7GHz ½ W Digital Variable Gain Amplifier
Detailed Device Description
The TQM879008 is a 50 Ω internally matched digital variable gain amplifier (DVGA) featuring high linearity over the entire
gain control range. The amplifier module features the integration of two gain block, a digital-step attenuator (DSA), along
with a high linearity ½ W amplifier. The module is unconditionally stable. Internal blocking capacitors and bias structures
keep external parts count to a minimum. The DVGA has an operational frequency range from 1.5-2.7 GHz.
For any further technical questions, please email to [email protected].
Functional Schematic Diagram
SPI
AMP1
M.N.
AMP2
AMP3
M.N.
DSA
Where M = Matching Network.
Chain Analysis Table
The chain analysis of DVGA module is shown below in the table. This table provides the typical performance of individual
stages in the module as well as overall module performance.
Function
Individual Stage Performance
AMP1
DSA
AMP2
AMP3
Overall
Performance
Gain (dB)
NF (dB)
OIP3 (dBm)
P1dB (dBm)
14
3.9
30
15
-1.8
1.8
55
28.5
14
2.0
40
22
15
4.5
48
27.4
41.1
3.9
47.5
27.3
Icc (mA)
60
2.0
85
140
285
Data Sheet: Rev G 12/10/12
© 2012 TriQuint Semiconductor, Inc.
- 8 of 11-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
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TQM879008
1.5-2.7GHz ½ W Digital Variable Gain Amplifier
22 NC
23 GND
24 GND
25 GND
26 GND
27 GND
28 Vcc_SPI
Pin Configuration and Description
LE 1
21 GND
S
P
I
DATA 2
DSA
20 GND
AMP2
Matching
19 GND
AMP3
CLK 3
18 GND
NC 4
GND 5
17 GND
Matching
RFIN 6
1
LE
2
DATA
3
4, 22
6
CLK
N/C
RFIN
VCC_AMP1/
VCC_AMP2
15 GND
Vcc_AMP3 14
GND 13
DC Biasing
GND 12
GND 11
GND 9
Vcc_AMP1/
Vcc_AMP2 8
Symbol
GND 10
DC Biasing
GND 7
Pin
16 RFOUT
AMP1
Backside
Paddle - GND
Description
14
VCC_AMP3
16
RFOUT
Serial Latch Enable Input. When LE is high, latch is clear and content of SPI control the attenuator.
When LE is low, data in SPI is latched.
Serial data input. The data and clock pins allow the data to be entered serially into SPI and is
independent of Latch state.
Serial clock input.
No connect or open. This pin is not connected in this module
Input, matched to 50 ohms. Internally DC blocked.
Supply Voltage to AMP1 and AMP2. This pin is connected internally to bypass capacitors followed
by inductor inside the module.
Supply Voltage to AMP3. This pin is connected internally to bypass capacitors followed by inductor
inside the module.
Output, matched to 50 ohms. Internally DC blocked.
28
VCC_SPI
Supply voltage for SPI and DSA chip. This pin is connected to bypass capacitor internally.
All other Pins
GND
RF/DC Ground Connection
8
PC Board Specifications
PCB Material and Stack-up
Nelco N-4000-13
εr=3.7 typ.
0.014"
0.062 ± 0.006
Finished Board
Thickness
1 oz. Cu top layer
1 oz. Cu inner layer
Core
1 oz. Cu inner layer
0.014"
Nelco N-4000-13
1 oz. Cu bottom layer
Data Sheet: Rev G 12/10/12
© 2012 TriQuint Semiconductor, Inc.
- 9 of 11-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TQM879008
1.5-2.7GHz ½ W Digital Variable Gain Amplifier
Mechanical Information
Package Information and Dimensions
Markings:
2X
.10 C
TERMINAL #1
IDENTIFIER
6.0±0.1
Part Number: TQM879008
Lot Code: ‘YY’ is the year of manufacture
‘WW’ is the work week
‘AaXXXX’ is the Assembly code
28X 0.10
4
TERMINAL #1
IDENTIFIER
28X 0.70 Pitch
0.70
0.10
TriQuint
6.0±0.1
5.35
0.70
2.10
(1X) shape
0.10
YYWW
.10 C
C A B
2.10
TQM879008
9005
YYWW
CCCC
AXXXXX
2X
4
(28X) 0.450x X 0.400y
2.10
C A B
2.10
GND/THERMAL PAD
5
.10 C
28X
1.02±0.08
.08 C
SEATING PLANE
5
C
1.
2.
3.
4.
5.
All dimensions are in millimeters. Angles are in degrees.
Except where noted, this part outline conforms to JEDEC standard MO-270, Issue B (Variation DAE) for extra thin profile,
fine pitch, internal stacking module (ISM).
Dimension and tolerance formats conform to ASME Y14.4M-1994.
The contact pin numbering convention and pin 1 identifier conform to JESD 95-1 SPP-012.
Coplanarity applies to the exposed ground/thermal pad as well as the contact pins.
PCB Mounting Pattern
30X 3
PACKAGE
OUTLINE
1
28X 0.40
0.70 PITCH
0.35
28X 0.73
4.20
0.76
0.38
0.66
4.20
COMPONENT SIDE
Notes:
1.
2.
3.
4.
All dimensions are in millimeters. Angles are in degrees.
Use 1 oz. copper minimum for top and bottom layer metal.
Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. We recommend a
0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25mm (0.10”).
Ensure good package backside paddle solder attach for reliable operation and best electrical performance.
Data Sheet: Rev G 12/10/12
© 2012 TriQuint Semiconductor, Inc.
- 10 of 11-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TQM879008
1.5-2.7GHz ½ W Digital Variable Gain Amplifier
Product Compliance Information
ESD Information
Solderability
Compatible with both lead-free (maximum 260 °C
reflow temperature) and tin/lead (maximum 245 °C
reflow temperature) soldering processes.
ESD Rating:
Value:
Test:
Standard:
Class 1C
Passes  1000 V to < 2000 V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
ESD Rating:
Value:
Test:
Standard:
Class IV
Passes  1000 V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
This product also has the following attributes:
 Halogen Free (Chlorine, Bromine)
 Antimony Free
 TBBP-A (C15H12Br402) Free
 PFOS Free
 SVHC Free
MSL Rating
The part is rated Moisture Sensitivity Level 3 at 260°C per JEDEC
standard IPC/JEDEC J-STD-020.
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
TriQuint:
Web: www.triquint.com
Email: [email protected]
Tel:
Fax:
+1.503.615.9000
+1.503.615.8902
For technical questions and application information:
Email: [email protected]
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint
assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained
herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with
the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest
relevant information before placing orders for TriQuint products. The information contained herein or any use of such
information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property
rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
Data Sheet: Rev G 12/10/12
© 2012 TriQuint Semiconductor, Inc.
- 11 of 11-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®