Transistors IC SMD Type Product specification 2SD2122S TO-252 Features +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low frequency power amplifier. 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO 180 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V Collector current IC 1.5 A Peak collector current ICP 3 A W Collector power dissipation TC = 25 PC 18 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC = 1 mA, IE = 0 180 V Collector to emitter breakdown voltage V(BR)CEO IC = 10 mA, RBE = 120 V Emitter to base breakdown voltage V(BR)EBO IE = 1 mA, IC = 0 5 V Collector cutoff current ICBO DC current transfer ratio * hFE VCB = 160 V, IE = 0 10 VCE = 5 V,IC = 150 mA 60 VCE = 5 V,IC = 500 mA 30 200 VCE(sat) IC = 500 mA,IB = 50 mA Collector to emitter saturation voltage ìA 1 Base to emitter voltage VBE VCE = 5 V,IC = 150 mA Gain bandwidth product fT VCE = 5 V,IC = 150 mA 180 MHz VCB = 10 V, IE = 0,f = 1 MHz 14 pF Collector output capacitance Cob 1.5 V V * Pulse test hFE Classification Marking B C hFE 60 120 100 200 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1