Transistors IC SMD Type Product specification 2SC3513 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 11 V Emitter-base voltage VEBO 2 V Collector current IC 500 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Collector to base breakdown voltage Testconditons V(BR)CBO IC= 10 mA, IE = 0 Min Typ Max 15 Unit V Collector cutoff current ICEO VCE = 10 V, RBE = 1 ìA Emitter cutoff current IEBO VEB = 1 V, IC = 0 1 ìA Collector cutoff current ICBO VCB = 12 V, IE = 0 1 ìA DC current transfer ratio hFE VCE = 5 V, IC = 20 mA 120 250 Collector output capacitance Cob VCB = 5 V, IE = 0, f = 1 MHz 1.0 1.5 6.0 GHz 50 pF Gain bandwidth product fT VCE = 5 V, IC = 20 mA Power gain PG VCE = 5 V, IC = 20 mA,f = 900 MHz 10 dB Noise figure NF VCE = 5 V, IC = 5 mA,f = 900 MHz 1.6 dB Marking Marking IS- http://www.twtysemi.com [email protected] 4008-318-123 1 of 1