MOSFET SMD Type Product specification 2SK3456 TO-263 Unit: mm +0.1 1.27-0.1 Features Low gate charge +0.1 1.27-0.1 +0.2 4.57-0.2 MAX. (VGS = 10 V, ID = 6.0 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS(on) = 0.60 Avalanche capability ratings Surface mount package available +0.2 2.54-0.2 +0.2 15.25-0.2 Low on-state resistance +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 30 V +0.2 8.7-0.2 Gate voltage rating 5.60 QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A) 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V ID 12 A Idp * 36 A Drain current Power dissipation TC=25 100 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 1.5 TA=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Symbol IDSS VDS=500V,VGS=0 Min IGSS VGS= 30V,VDS=0 VDS=10V,ID=1mA 2.5 Yfs VDS=10V,ID=6.0A 2.0 RDS(on)1 VGS=10V,ID=6.0A Ciss Output capacitance Coss Reverse transfer capacitance Turn-on delay time Rise time tr Turn-off delay time toff Fall time tf Typ Max 10 VGS(off) Input capacitance 100 3.5 Unit A A V S 0.48 0.60 1620 pF 250 pF Crss 10 pF ton 24 ns 18 ns Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD http://www.twtysemi.com Testconditons VDS=10V,VGS=0,f=1MHZ ID=6.0A,VGS(on)=10V,RG=10 ,VDD=150V ID =12A, VDD =400V, VGS = 10 V [email protected] 50 ns 15 ns 30 nC 9 nC 11 nC 4008-318-123 1 of 1