TYSEMI 2SK3456

MOSFET
SMD Type
Product specification
2SK3456
TO-263
Unit: mm
+0.1
1.27-0.1
Features
Low gate charge
+0.1
1.27-0.1
+0.2
4.57-0.2
MAX. (VGS = 10 V, ID = 6.0 A)
0.1max
+0.1
1.27-0.1
+0.2
5.28-0.2
RDS(on) = 0.60
Avalanche capability ratings
Surface mount package available
+0.2
2.54-0.2
+0.2
15.25-0.2
Low on-state resistance
+0.1
0.81-0.1
2.54
+0.2
2.54-0.2
30 V
+0.2
8.7-0.2
Gate voltage rating
5.60
QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A)
5.08
1 Gate
+0.2
0.4-0.2
+0.1
-0.1
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
500
V
Gate to source voltage
VGSS
30
V
ID
12
A
Idp *
36
A
Drain current
Power dissipation
TC=25
100
PD
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
W
1.5
TA=25
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Symbol
IDSS
VDS=500V,VGS=0
Min
IGSS
VGS= 30V,VDS=0
VDS=10V,ID=1mA
2.5
Yfs
VDS=10V,ID=6.0A
2.0
RDS(on)1
VGS=10V,ID=6.0A
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Turn-on delay time
Rise time
tr
Turn-off delay time
toff
Fall time
tf
Typ
Max
10
VGS(off)
Input capacitance
100
3.5
Unit
A
A
V
S
0.48
0.60
1620
pF
250
pF
Crss
10
pF
ton
24
ns
18
ns
Total Gate Charge
QG
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
http://www.twtysemi.com
Testconditons
VDS=10V,VGS=0,f=1MHZ
ID=6.0A,VGS(on)=10V,RG=10
,VDD=150V
ID =12A, VDD =400V, VGS = 10 V
[email protected]
50
ns
15
ns
30
nC
9
nC
11
nC
4008-318-123
1 of 1