Product specification DMN100 N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • Mechanical Data • • Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits ESD Protected Gate Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • Case: SC59 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.014 grams (approximate) Drain SC59 D Gate Gate Protection Diode Top View ESD PROTECTED Source G Equivalent Circuit S Top View Ordering Information (Note 3) Part Number DMN100-7-F Notes: Case SC59 Packaging 3000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. Marking Information Date Code Key Year 2006 Code T YM M11 M11 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z 2013 A 2014 B 2015 C 2016 D 2017 E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D http://www.twtysemi.com [email protected] 1 of 2 Product specification DMN100 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current Symbol VDSS VGSS Continuous Continuous Pulsed Value 30 ±20 1.1 4.0 Units V V Value 500 250 -55 to +150 Units mW K/W °C ID A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Min Typ BVDSS 30 @ TJ = 25°C @ TJ = 125°C Max Unit — — V VGS = 0V, ID = 250μA μA VDS = 24V, VGS = 0V IDSS — — 1.0 10 Test Condition Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage IGSS — — ± 100 nA VGS = ± 12V, VDS = 0V VGS(th) 1.0 — V Static Drain-Source On-Resistance RDS (ON) — — 3.0 0.170 0.150 gFS 1.3 2.4 ⎯ S VDS = 10V, ID = 1.0mA VGS = 4.5V, ID = 0.5A VGS = 10V, ID = 1.0A VDS = 10V, ID = 0.5A Ciss Coss Crss Qg Qgs Qgd — — — — — — 150 90 30 5.5 0.8 1.3 — — — — — — pF pF pF nC nC nC tD(ON) tD(OFF) tr tf — — — — 10 25 15 45 — — — — ns ns ns ns VDD = 10V, ID = 0.5A, VGS = 5.0V, RGEN = 50Ω IS ISM VSD trr — — — — — — — 35 0.54 4.0 1.2 — A A V ns — — IF = 1.0A, VGS = 0V IF = 1.0A, di/dt = 50A/μs Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time SOURCE-DRAIN RATINGS (BODY DIODE) Continuous Source Current Pulse Source Current Forward Voltage Reverse Recovery Time Notes: Ω VDS = 10V, VGS = 0V f = 1.0MHz VDS = 24V, ID = 1.0A, VGS = 10V 2. Pulse width ≤ 300μs, duty cycle ≤ 2%. http://www.twtysemi.com [email protected] 2 of 2