Product specification DMP2130L P-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • Mechanical Data • • Low RDS(ON): • 75 mΩ @VGS = -4.5V • 110 mΩ @VGS = -2.7V • 125 mΩ @VGS = -2.5V Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 1, 2 and 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT23 Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Weight: 0.008 grams (approximate) • • • • Drain SOT23 D Gate Top View Internal Schematic Top View S G Source Ordering Information (Note 4) Part Number DMP2130L-7 Notes: Case SOT23 Packaging 3000/Tape & Reel 1. No purposefully added lead. Halogen and Antimony Free. 2. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants. MP1 Date Code Key Year Code Month Code 2007 U Jan 1 http://www.twtysemi.com YM Marking Information MP1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: U = 2007) M = Month (ex: 9 = September) 2008 V Feb 2 Mar 3 2009 W Apr 4 May 5 [email protected] 2010 X Jun 6 Jul 7 2011 Y Aug 8 Sep 9 2012 Z Oct O Nov N Dec D 1 of 2 Product specification DMP2130L Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) Continuous Symbol VDSS VGSS TA = 25°C TA = 70°C Value -20 ±12 -3.0 -2.4 -15 2.0 ID Pulsed Drain Current (Note 6) Body-Diode Continuous Current (Note 5) IDM IS Unit V V A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5); Steady-State Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 1.4 90 -55 to +150 Unit W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage On State Drain Current (Note 7) TJ = 25°C Static Drain-Source On-Resistance (Note 7) Forward Transconductance (Note 7) Diode Forward Voltage (Note 7) Maximum Body-Diode Continuous Current (Note 5) DYNAMIC PARAMETERS (Note 8) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS VGS(th) ID (ON) -20 ⎯ ⎯ -0.6 -15 ⎯ ⎯ -1 ±100 -1.25 ⎯ 75 110 125 V μA nA V A RDS (ON) ⎯ ⎯ ⎯ ⎯ ⎯ 51 87 99 gFS VSD IS ⎯ ⎯ ⎯ 7.3 0.79 ⎯ ⎯ -1.26 1.7 S V A Qg Qgs Qgd tD(on) tr tD(off) tf Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 7.3 2.0 1.9 12 20 38 41 443 128 101 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC nC nC ns ns ns ns pF pF pF mΩ Test Condition ID = -250μA, VGS = 0V VDS = -20V, VGS = 0V VDS = 0V, VGS = ±12V VDS = VGS, ID = -250μA VGS = -4.5V, VDS = -5V VGS = -4.5V, ID = -3.5A VGS = -2.7V, ID = -3.0A VGS = -2.5V, ID = -2.6A VDS = -10V, ID = -3.0A IS = -1.7A, VGS = 0V ⎯ VGS = -4.5V, VDS = -10V, ID = -3.0A VGS = -4.5V, VDS = -10V, ID = -3.0A VGS = -4.5V, VDS = -10V, ID = -3.0A VDS = -10V, VGS = -4.5V, RL = 10Ω, RG = 6Ω VDS = -16V, VGS = 0V f = 1.0MHz 3. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s. 4. Repetitive Rating, pulse width limited by junction temperature. 5. Test pulse width t = 300μs. 6. Guaranteed by design. Not subject to production testing. http://www.twtysemi.com [email protected] 2 of 2