SMD Type Product specification FDN306P General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –2.6 A, –12 V. Applications • Fast switching speed • Battery management • High performance trench technology for extremely low RDS(ON) • Load switch RDS(ON) = 40 mΩ @ VGS = –4.5 V RDS(ON) = 50 mΩ @ VGS = –2.5 V RDS(ON) = 80 mΩ @ VGS = –1.8 V • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint • Battery protection D D S TM SuperSOT -3 Absolute Maximum Ratings Symbol S G G o TA=25 C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage –12 V VGSS Gate-Source Voltage ±8 V ID Drain Current –2.6 –10 A PD Maximum Power Dissipation (Note 1a) 0.5 W (Note 1b) 0.46 – Continuous (Note 1a) – Pulsed TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) 250 °C/W (Note 1) 75 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 306 FDN306P 7’’ 8mm 3000 units http://www.twtysemi.com [email protected] 4008-318-123 1of 2 SMD Type Product specification FDN306P Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA,Referenced to 25°C VDS = –10 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA VDS = VGS, ID = –250 µA –1.5 V On Characteristics ID = –250 µA –12 V –3 mV/°C (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) gFS –0.4 –0.6 ID = –250 µA,Referenced to 25°C 2.5 30 39 54 40 On–State Drain Current VGS = –4.5 V, ID = –2.6 A VGS = –2.5 V, ID = –2.3 A VGS = –1.8V, ID = –1.8 A VGS = –4.5 V, ID = –2.6A , TJ=125°C VGS = –4.5 V, VDS = –5 V Forward Transconductance VDS = –5 V, ID = –2.6 A 10 VDS = –6 V, f = 1.0 MHz V GS = 0 V, 1138 pF 454 pF 302 pF mV/°C 40 50 80 54 –10 mΩ A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDD = –6 V, VGS = –4.5 V, VDS = –6 V, VGS = –4.5 V ID = –1 A, RGEN = 6 Ω ID = –2.6 A, 11 20 ns 10 20 ns 38 61 ns 35 56 ns 12 17 nC 2 nC 3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –0.42 (Note 2) –0.6 –0.42 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% http://www.twtysemi.com [email protected] 4008-318-123 2of 2