SMD Type Product specification FDN352AP Features General Description ■ –1.3 A, –30V –1.1 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V RDS(ON) = 300 mΩ @ VGS = –4.5V This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. ■ High performance trench technology for extremely low RDS(ON). ■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package. Applications ■ Notebook computer power management D D S G G S SuperSOT™-3 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –30 V VGSS Gate-Source Voltage ±25 V ID Drain Current – Continuous –1.3 A – Pulsed –10 Power Dissipation for Single Operation PD 0.5 W 0.46 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C 250 °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case 75 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 52AP FDN352AP 7’’ 8mm 3000 units http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type Product specification FDN352AP Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆ TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA IGSS Gate–Body Leakage VGS = ±25V, VDS = 0 V ±100 nA –2.5 V –30 V mV/°C –17 On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆ TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C RDS(on) Static Drain–Source On–Resistance VGS = –10 V, ID = –1.3 A VGS = –4.5 V, ID = –1.1 A VGS = –4.5 V, ID = –1.1 A, TJ = 125°C 150 250 330 gFS Forward Transconductance VDS = –5 V, ID = –0.9 A 2.0 S VDS = –15 V, VGS = 0 V, f = 1.0 MHz 150 pF –0.8 –2.0 mV/°C 4 180 300 400 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance 40 pF Crss Reverse Transfer Capacitance 20 pF Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = –10 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω VDS = –10V, ID = –0.9 A, VGS = –4.5 V 4 8 ns 15 28 ns 10 18 ns 1 2 ns 1.4 1.9 nC 0.5 nC 0.5 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –0.42 A trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge IF = –3.9 A, dIF/dt = 100 A/µs http://www.twtysemi.com [email protected] –0.42 –0.8 –1.2 A V 17 ns 7 nC 4008-318-123 2 of 2