SMD Type Product specification FDN361AN General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • 1.8 A, 30 V. RDS(on) = 0.100 Ω @ VGS = 10 V RDS(on) = 0.150 Ω @ VGS = 4.5 V. • Low gate charge ( 2.1nC typical ). • Fast switching speed. • High performance trench technology for extremely low RDS(on). • High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. Applications • DC/DC converter • Load switch • Motor drives D D S TM SuperSOT -3 Absolute Maximum Ratings Symbol S G G o TA=25 C unless otherwise noted Parameter FDN361AN Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage - Continuous V ID Drain Current (Note 1a) ±20 1.8 PD Power Dissipation for Single Operation (Note 1a) 0.5 (Note 1b) 0.46 - Continuous - Pulsed 8 Operating and Storage Junction Temperature Range TJ, Tstg A W -55 to +150 °C °C/W °C/W Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient (Note 1a) 250 Thermal Resistance, Junction-to-Case (Note 1) 75 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 361 FDN361AN 7’’ 8mm 3000 units http://www.twtysemi.com 4008-318-123 1 of 2 SMD Type Product specification FDN361AN DMOS Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V 1 IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA On Characteristics 30 V mV/°C 24 (Note 2) VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 10 V, ID = 1.8 A 1 1.8 3 VGS = 10 V, ID = 1.8 A VGS = 10 V, ID = 1.8 A, TJ = 125°C VGS = 4.5 V, ID = 1.4 A 0.072 0.107 0.105 V mV/°C -4.2 0.1 0.16 0.15 8 Ω A 5 S Dynamic Characteristics Ciss Input Capacitance 220 pF Coss Output Capacitance 50 pF Crss Reverse Transfer Capacitance 20 pF Switching Characteristics VDS = 15 V, VGS = 0 V, f = 1.0 MHz (Note 2) td(on) Turn-On Delay Time VDD = 15 V, ID = 1 A, 3 6 ns t Turn-On Rise Time VGS = 10 V, RGEN = 6.0 Ω 11 22 ns td(off) Turn-Off Delay Time 7 14 ns tf Turn-Off Fall Time 3 6 ns Qg Total Gate Charge VDS = 15 V, ID = 1.8 A, 2.1 4 Qgs Gate-Source Charge VGS = 5 V 0.8 nC Qgd Gate-Drain Charge 0.7 nC nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note 2) 0.75 0.42 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. Cu. b) 270°C/W when mounted on a mininum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% http://www.twtysemi.com 4008-318-123 2 of 2