SMD Type Product specification FDN86246 150 V, 1.6 A, 261 m: Features General Description Max rDS(on) = 261 m: at VGS = 10 V, ID = 1.6 A Max rDS(on) = 359 m: at VGS = 6 V, ID = 1.4 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Application PD Switch Fast switching speed 100% UIL tested RoHS Compliant MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage -Continuous ID (Note 1a) -Pulsed PD TJ, TSTG Units V ±20 V 1.6 6 Single Pulse Avalanche Energy EAS Ratings 150 (Note 3) 13 Power Dissipation (Note 1a) 1.5 Power Dissipation (Note 1b) 0.6 Operating and Storage Junction Temperature Range -55 to +150 A mJ W °C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient (Note 1) 75 (Note 1a) 80 °C/W Package Marking and Ordering Information Device Marking 246 http://www.twtysemi.com Device FDN86246 Package SSOT-3 Reel Size 7 ’’ Tape Width 8 mm 4008-318-123 Quantity 3000 units 1 of 2 SMD Type Product specification FDN86246 Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 PA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 150 V 106 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2 3.4 -9 mV/°C VGS = 10 V, ID = 1.6 A 195 261 VGS = 6 V, ID = 1.4 A 242 359 VGS = 10 V, ID = 1.6 A, TJ = 125 °C 359 481 VDS = 10 V, ID = 1.6 A 4 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 75 V, VGS = 0 V, f = 1 MHz 168 225 pF 21 30 pF 1.6 5 pF : 0.9 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time 4.5 10 VDD = 75 V, ID = 1.6 A, VGS = 10 V, RGEN = 6 : 1.1 10 ns 8 16 ns 2.9 10 ns 2.9 5 nC 1.6 3 nC tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V VGS = 0 V to 5 V Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 75 V, ID = 1.6 A ns 0.9 nC 0.8 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 1.6 A (Note 2) IF = 1.6 A, di/dt = 100 A/Ps 0.83 1.3 V 44 70 ns 29 47 nC Notes: 1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design. a) 80 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 180 °C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 3 A, VDD = 150 V, VGS = 10 V. http://www.twtysemi.com 4008-318-123 2 of 2