TYSEMI FMMT459

Transistors
SMD Type
Product specification
FMMT459
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
Low saturation voltage - 90mV @ 50mA
hFE
0.55
6V reverse blocking capability
2
+0.1
0.95-0.1
+0.1
1.9-0.1
50 @ 30 Ma
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
IC=150mA continuous
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
500
V
Collector-emitter voltage
VCEV
500
V
Collector-emitter voltage
VCEO
450
V
Emitter-base voltage
VEBO
6
V
Emitter-collector voltage
VECV
6
V
Peak pulse current
ICM
0.5
A
Continuous collector current * 1
IC
0.15
Base current
IB
0.2
A
625
mW
Power dissipation @ TA=25 * 1
PD
Linear derating factor
Power dissipation @ TA=25 *2
5
PD
Linear derating factor
Operating and storage temperature range
mW/
806
mW
6.4
mW/
Tj:Tstg
-55 to +150
?Junction to ambient *1
RèJA
200
/W
Junction to ambient *2
RèJA
155
/W
*1 For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of 1oz copper, in
still air conditions
*2 as above measured at t<5secs.
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
SMD Type
Product specification
FMMT459
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector-base breakdown voltage
BVCBO
IC=100ìA
Collector-emitter breakdown voltage
BVCEV
IC=10ìA,0.3V
Collector-emitter breakdown voltage *
BVCEO
IC=10mA
VBE -1V
Min
Typ
Max
Unit
500
700
V
500
700
V
450
500
V
6
8.1
V
6
8.1
V
Emitter-base breakdown voltage
BVEBO
IE=100ìA
Emitter-base breakdown voltage
BVECV
IC=1ìA,0.3V
Collector-emitter cut-off current
ICES
VCE=450V
Collector-base cut-off current
ICBO
VCB=450V
100
nA
Emitter-base cut-off current
IEBO
VEB=5V
100
nA
Static forward current transfer ratio
hFE
Collector-emitter saturation voltage *
VCE(sat)
VBC -6V
100
IC=30mA,VCE=10V
50
nA
120
IC=50mA,VCE=10V *
70
IC=20mA,IB=2mA
60
75
mV
IC=50mA,IB=6mA
70
90
mV
Base-emitter saturation voltage *
VBE(sat) IC=50mA,IB=5mA
0.76
0.9
V
Base-emitter turn on voltage *
VBE(on) IC=50mA,VCE=10V
0.71
0.9
V
IC=10mA,VCE=20V,f=20MHz
50
MHz
Transition frequency
fT
Output capacitance
Cobo
VCB=20V, f=1MHz
Turn-on time
ton
IC=50mA, VCC=100V
113
ns
Turn-off time
toff
IB1=5mA, IB2=10mA
3450
ns
* Measured under pulsed conditions. Pulse width = 300 ìs; duty cycle
5
pF
2%
Marking
Marking
459
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2