Transistors SMD Type Silicon NPN High Voltage Switching Transistor FMMT459 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low saturation voltage - 90mV @ 50mA hFE 0.55 6V reverse blocking capability 2 +0.1 0.95-0.1 +0.1 1.9-0.1 50 @ 30 Ma +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 IC=150mA continuous 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 500 V Collector-emitter voltage VCEV 500 V Collector-emitter voltage VCEO 450 V Emitter-base voltage VEBO 6 V Emitter-collector voltage VECV 6 V Peak pulse current ICM 0.5 A Continuous collector current * 1 IC 0.15 Base current IB 0.2 A 625 mW Power dissipation @ TA=25 * 1 PD Linear derating factor Power dissipation @ TA=25 *2 5 PD Linear derating factor Operating and storage temperature range mW/ 806 mW 6.4 mW/ Tj:Tstg -55 to +150 ?Junction to ambient *1 RèJA 200 /W Junction to ambient *2 RèJA 155 /W *1 For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of 1oz copper, in still air conditions *2 as above measured at t<5secs. www.kexin.com.cn 1 Transistors SMD Type FMMT459 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector-base breakdown voltage BVCBO IC=100ìA Collector-emitter breakdown voltage BVCEV IC=10ìA,0.3V Collector-emitter breakdown voltage * BVCEO IC=10mA Emitter-base breakdown voltage BVEBO IE=100ìA Emitter-base breakdown voltage BVECV IC=1ìA,0.3V Collector-emitter cut-off current ICES VCE=450V Collector-base cut-off current ICBO Emitter-base cut-off current IEBO Static forward current transfer ratio hFE Collector-emitter saturation voltage * VCE(sat) VBC -6V Typ Max Unit 500 700 V 500 700 V 450 500 V 6 8.1 V 6 8.1 V 100 nA VCB=450V 100 nA VEB=5V 100 nA IC=30mA,VCE=10V 50 120 IC=50mA,VCE=10V * 70 IC=20mA,IB=2mA 60 75 mV IC=50mA,IB=6mA 70 90 mV Base-emitter saturation voltage * VBE(sat) IC=50mA,IB=5mA 0.76 0.9 V Base-emitter turn on voltage * VBE(on) IC=50mA,VCE=10V 0.71 0.9 V IC=10mA,VCE=20V,f=20MHz 50 MHz Transition frequency fT Output capacitance Cobo VCB=20V, f=1MHz Turn-on time ton IC=50mA, VCC=100V 113 ns Turn-off time toff IB1=5mA, IB2=10mA 3450 ns * Measured under pulsed conditions. Pulse width = 300 ìs; duty cycle Marking Marking 2 VBE -1V Min 459 www.kexin.com.cn 2% 5 pF