Diodes SMD Type General Purpose PIN Diode KAP50-03(BAP50-03) SOD-323 Unit: mm +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Features Low diode capacitance. Low diode forward resistance. +0.1 2.6-0.1 0.375 +0.05 0.1-0.02 0.475 1.0max Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VR 50 V Continuous reverse voltage Continuous forward current IF 50 mA Total power dissipation TS = 90 Ptot 500 mW Storage temperature Tstg -65 to +150 Tj 150 Rth j-s 85 Junction temperature Thermal resistance from junction to soldering point K/W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Forward voltage VF IF = 50 mA Reverse voltage VR IR = 10 Reverse current IR Diode capacitance Cd Diode forward resistance rD A Min Typ Max Unit 0.95 1.1 V 50 V VR = 50 V 100 nA VR = 0; f = 1 MHz 0.4 VR = 1 V; f = 1 MHz 0.3 0.55 pF VR = 5 V; f = 1 MHz 0.2 0.35 pF IF = 0.5 mA; f = 100 MHz 25 40 IF = 1 mA; f = 100 MHz 14 25 IF = 10 mA; f = 100 MHz 3 5 pF Marking Marking A5 www.kexin.com.cn 1 Diodes SMD Type KAP50-03(BAP50-03) Typical Characteristics Tj = 25 Tj = 25 ; f = 100 MHz. Fig.1 Forward resistance as a function of forward current; typical values. ; f = 100 MHz. Fig.2 Diode capacitance as a function of reverse voltage; typical values. Diode zero biased and inserted in series with a 50 stripline circuit (1) IF = 10 mA. (2) IF = 1 mA. (3) IF = 0.5 mA. Diode inserted in series with a 50 stripline circuit and biased via t analyzer Tee network. Tamb = 25 °C. Fig.3 Insertion loss (|S21|2) of the diode as a function of frequency; typical values. 2 www.kexin.com.cn Tamb = 25 . Fig.4 Isolation (|S21|2) of the diode as a function of frequency; typical values.