Product specification KCP69 SOT-223 Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 0.1max +0.05 0.90-0.05 High current (max. 1 A) Low voltage (max. 20 V). +0.1 3.00-0.1 +0.15 1.65-0.15 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 1 Base 2 ,4 Collector 3 Emitter 3 2 +0.1 0.70-0.1 2.9 4.6 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -32 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector current (DC) IC -1 A Peak collector current ICM -2 A Peak base current IBM -200 mA PD 1.35 W Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Tamb -65 to +150 Thermal resistance from junction to ambient Rth(j-a) 91 K/W Thermal resistance from junction to solder point Rth(j-s) 10 K/W Total power dissipation Tamb 25 Operating ambient temperature Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Emitter cutoff current IEBO Testconditons Min Typ Max Unit -100 -10 nA IE = 0 A; VCB = -25 V; Tj = 150 IC = 0 A; VEB = -5 V -100 nA IE = 0 A; VCB = -25 V A DC current gain VCE = -10 V; IC = -5 mA hFE DC current gain BCP69-16 85 VCE = -1 V; IC = -1 A 60 VCE = -1 V; IC = -500 mA BCP69-25 Collector-emitter saturation voltage 50 VCE = -1 V; IC = -500 mA VCEsat 375 100 250 160 375 IC = -1 A; IB = -100 mA; -500 VCE = -10 V; IC = -5 mA -620 Base-emitter voltage VBE Collector capacitance Cc IE = ie = 0 A; VCB = -5 V; f = 1 MHz Transition frequency fT IC = -10 mA; VCE = -5 V; f = 100 MHz VCE = -1 V; IC = -1 A mV -1 48 40 mV V pF MHz Marking Marking BCP69 1 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification KCP69 Typlcal Characteristics Fig.1 DC current gain; typical values. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2