Transistors IC SMD Type Product specification BCX51,BCX52,BCX53 Features High current (max. 1 A). Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage BCX51 Symbol Rating Unit VCBO -45 V BCX52 -60 V BCX53 -100 V -45 V BCX52 -60 V BCX53 -80 V BCX51 Emitter-base voltage VCEO VEBO -5 V Collector current IC -1 A Peak collector current ICM -1.5 A Peak base current IBM -200 mA Total power dissipation Ptot 1.3 W Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient Rth(j-a) 94 K/W Thermal resistance from junction to solder point Rth(j-s) 14 K/W http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification BCX51,BCX52,BCX53 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Testconditons Min Typ Max VCB = -30 V, IE = 0 -100 nA ìA nA VCB = -30 V, IE = 0; Tj = 125 -10 Emitter cutoff current IEBO VEB = -5 V, IC = 0 -100 DC current gain hFE IC = -5 mA; VCE = -2 V 63 IC = -150 mA; VCE = -2 V 63 DC current gain BCX51-10,BCX52-10,BCX53-10 hFE BCX51-16,BCX52-16,BCX53-16 250 IC = -500 mA; VCE = -2 V 40 IC = -150 mA; VCE = -2 V 63 160 IC = -150 mA; VCE = -2 V 100 250 VCE(sat) IC = -500 mA; IB = -50 mA Collector-emitter saturation voltage Base to emitter voltage VBE Transition frequency fT Unit -500 IC = -500 mA; VCE = -2 V -1 IC = -10 mA; VCE = -5 V; f = 100 MHz 50 mV V MHz hFE Classification TYPE BCX51 BCX51-10 BCX51-16 Marking AA AC AD TYPE BCX52 BCX52-10 BCX52-16 Marking AE AG AM TYPE BCX53 BCX53-10 BCX53-16 Marking AH AK AL http://www.twtysemi.com [email protected] 4008-318-123 2 of 2