TYSEMI BCX52-16

Transistors
IC
SMD Type
Product specification
BCX51,BCX52,BCX53
Features
High current (max. 1 A).
Low voltage (max. 80 V).
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
BCX51
Symbol
Rating
Unit
VCBO
-45
V
BCX52
-60
V
BCX53
-100
V
-45
V
BCX52
-60
V
BCX53
-80
V
BCX51
Emitter-base voltage
VCEO
VEBO
-5
V
Collector current
IC
-1
A
Peak collector current
ICM
-1.5
A
Peak base current
IBM
-200
mA
Total power dissipation
Ptot
1.3
W
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient
Rth(j-a)
94
K/W
Thermal resistance from junction to solder point
Rth(j-s)
14
K/W
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
BCX51,BCX52,BCX53
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
ICBO
Testconditons
Min
Typ
Max
VCB = -30 V, IE = 0
-100
nA
ìA
nA
VCB = -30 V, IE = 0; Tj = 125
-10
Emitter cutoff current
IEBO
VEB = -5 V, IC = 0
-100
DC current gain
hFE
IC = -5 mA; VCE = -2 V
63
IC = -150 mA; VCE = -2 V
63
DC current gain BCX51-10,BCX52-10,BCX53-10
hFE
BCX51-16,BCX52-16,BCX53-16
250
IC = -500 mA; VCE = -2 V
40
IC = -150 mA; VCE = -2 V
63
160
IC = -150 mA; VCE = -2 V
100
250
VCE(sat) IC = -500 mA; IB = -50 mA
Collector-emitter saturation voltage
Base to emitter voltage
VBE
Transition frequency
fT
Unit
-500
IC = -500 mA; VCE = -2 V
-1
IC = -10 mA; VCE = -5 V; f = 100 MHz
50
mV
V
MHz
hFE Classification
TYPE
BCX51
BCX51-10
BCX51-16
Marking
AA
AC
AD
TYPE
BCX52
BCX52-10
BCX52-16
Marking
AE
AG
AM
TYPE
BCX53
BCX53-10
BCX53-16
Marking
AH
AK
AL
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2