TYSEMI KI2306

IC
MOSFET
SMD Type
Product specification
KI2306
SOT-23-3
Unit: mm
+0.2
2.9-0.2
+0.1
0.4-0.05
■ Features
● RDS(ON) =0.030Ω@V GS =10V
1
0.55
● RDS(ON) =0.052Ω@V GS =2.5V
+0.2
1.6 -0.1
+0.2
2.8-0.2
● RDS(ON) =0.035Ω@V GS =4.5V
0.4
3
2
+0.1
0.95-0.1
+0.2
1.9-0.2
+0.2
1.1 -0.1
D
+0.05
0.1-0.01
1.Base
1.
Gate
0-0.1
G
+0.1
0.38-0.1
2.Emitter
2.
Source
3.
Drain
3.collector
S
■ Absolute Maximum Ratings Ta = 25℃ Unless Otherwise Noted
Parameter
Symbol
5sec
Steady State
Drain-source voltage
V DS
30
Gate-source voltage
V GS
±12
Continuous drain current
@TA =25℃
ID
@ TA=70 ℃
Pulsed drain current
Maximum Power dissipation
@TA=25℃
PD
@ TA =70 ℃
Maximum Body-Diode Continuous Current
Is
Thermal Resistance-Junction to Case (Note 1)
Maximum Junction to Ambient (Note 1)
R θJC
t ≤10 sec
RθJA
Steady State
Operating junction and storage temperature range
V
4
3.16
3.5
2.7
IDM
Unit
A
20
1.25
0.75
0.8
0.48
1.04
0.62
W
A
65
℃/W
70
95
Tj,Tstg
-55 to +150
℃
Note: 1. The device mounted on 1in2 FR4 board with 2 oz copper
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IC
MOSFET
SMD Type
Product specification
KI2306
■ Electrical Characteristics Ta = 25℃ Unless Otherwise Noted
Parameter
Symbol
Drain-source breakdown voltage
V DSS
Zero gate voltage drain current
IDSS
Testconditons
Gate threshold voltage
V DS = 0 V, VGS = ± 12V
VGS(th)
V DS = V GS , I D = 250 µA
= 10 V,
ID
Max
Unit
V
1
= 0 V, TJ = 55 ℃
I GSS
V GS
Drain-source on-state resistance (Note 2)
Typ
30
V DS = 30V, VGS = 0 V
V DS =30V, VGS
Gate-body leakage
Min
V GS = 0 V, ID = 250 µA
µA
10
0.7
± 100
nA
1.4
V
= 4.0 A
0.024 0.030
RDS(ON) V GS = 4.5 V, ID =3.5 A
0.027 0.035
V GS = 2.5V, I D =2.8 A
Ω
0.037 0.052
ID(on)
V DS ≥ 5 V, V GS = 10 V
Forward transconductance
g fs
V DS = 4.5 V, ID = 4.0 A
6.9
S
gate charge
Qg
V DS = 15V ,VGS =10V , ID= 4.0A
13
nC
V DS = 15V ,VGS = 4.5 V , ID= 4.0 A
2.9
On-state drain current (Note 2)
20
A
Total gate charge
Qg
Gate-source charge
Q gs
Gate-drain charge
Qgd
Gate Resistance
Rg
Input capacitance
C iss
Output capacitance
Coss
Reverse transfer capacitance
Crss
15
td(on)
9
Turn-on time
tr
Turn-off time
td(off)
6.3
2.4
f = 1 MHz
0.6
V SD
Ω
380
V DS = 15V ,VGS = 0 , f = 1 MHz
V DD = 15V , R L = 15Ω ,
ID = 1A , VGEN =-10V , RG = 6Ω
pF
64
14
ns
33
tf
Diode Forward Voltage
nC
3
IS =1.25A, V GS=0V
0.8
1.2
V
Notes: 2. Pulse test: pulse width ≦300us, duty cycle ≦2%
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[email protected]
4008-318-123
2 of 4
IC
MOSFET
SMD Type
Product specification
KI2306
■ Typical Characteristics
Gate Charge
V GS - Gate-to-Source Voltage (V)
10
VDS = 15V
ID = 3.5 A
8
6
4
2
0
0
2
4
6
8
10
Qg - Total Gate Charge (nC)
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4008-318-123
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IC
MOSFET
SMD Type
Product specification
KI2306
■ Typical Characteristics
Single Pulse Power
12
10
Power (W)
8
6
TA = 25_C
4
2
0
0.01
0.1
1
10
100
500
Time (sec)
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4 of 4