IC IC SMD Type MOS Field Effect Transistor KPA1793 Features Low on-state resistance N-channel RDS(on)1 = 69 m MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 72 m MAX. (VGS = 4.0 V, ID = 1.5 A) RDS(on)3 = 107 m MAX. (VGS = 2.5 V, ID = 1.0 A) P-channel RDS(on)1 = 115 m MAX. (VGS = -4.5 V, ID = -1.5 A) RDS(on)2 = 120 m MAX. (VGS = -4.0 V, ID = -1.5 A) RDS(on)3 = 190 m MAX. (VGS = -2.5 V, ID = -1.0 A) Low input capacitance N-channel Ciss = 160 pF TYP. P-channel Ciss = 370 pF TYP. Built-in gate protection diode Small and surface mount package Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0 V) Symbol N-Channel P- Channel Unit VDSS 20 -20 V Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) ID(DC) ID(pulse) Drain Current (pulse) *1 12 V 3 3 A 12 12 A 12 Total Power Dissipation (1 unit) *2 PT 1.7 W Total Power Dissipation (2 units) *2 PT 2 W Channel Temperature Tch 150 Storage Temperature Tstg -55 to +150 *1 PW 10 s, Duty Cycle 1% *2 Mounted on ceramic substrate of 5500 mm2 X 2.2 mm www.kexin.com.cn 1 IC IC SMD Type KPA1793 Electrical Characteristics Ta = 25 Parameter Zero Gate Voltage Drain Current IDSS Gate Leakage Current IGSS Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance VGS(off) | yfs | P- Ch -10 VGS = 12 V, VDS = 0 V N-Ch 10 VGS = 12 V, VDS = 0 V P- Ch 10 VDS = 10 V, ID = 1 mA N-Ch 0.5 1.0 1.5 VDS = -10 V, ID = -1 mA P- Ch -0.5 -1.0 -1.5 VDS = 10 V, ID = 1.5 A N-Ch 1.0 VDS = -10 V, ID = -1.5 A P- Ch 1.0 RDS(on)3 A V S 69 m 72 m VGS = 2.5 V, ID = 1.0A 78 107 m RDS(on)1 VGS = -4.5 V, ID = -1.5 A 75 115 m RDS(on)2 VGS = -4.0 V, ID = -1.5 A 80 120 m RDS(on)3 VGS = -2.5 V, ID = -1.0 A 116 190 m Crss Turn-on Delay Time td(on) tr td(off) tf QG Gate to Source Charge QGS Gate to Drain Charge QGD VF(S-D) Reverse Recovery Time trr Reverse Recovery Charge Qrr www.kexin.com.cn A 57 N-Ch P- Ch N-Channel N-Ch 160 VDS = 10 V,VGS = 0 V,f = 1 MHz P- Ch 370 N-Ch 60 P- Channel P- Ch 110 VDS = -10 V,VGS = 0 V,f = 1 MHz N-Ch 40 P- Ch 40 N-Channel N-Ch 17 VDD = 15 V, ID = 1.5 A,VGS = 4 V P- Ch 120 RG = 10 N-Ch 50 P- Ch 260 P- Channel N-Ch 86 VDD = -15 V, ID = -1.5 A,VGS = -4 V P- Ch 410 RG = 10 N-Ch 80 P- Ch 360 N-Channel N-Ch 3.1 ID = 3.0 A,VDD = 16 V,VGS = 4.0 V P- Ch 3.4 N-Ch 0.7 P- Channel P- Ch 1.3 ID = -3.0 A,VDD = -10 V,VGS = -4.0 V N-Ch 1.4 P- Ch 1.6 IF = 3 A, VGS = 0 V N-Ch 0.86 IF = 3 A, VGS = 0 V P- Ch 0.86 IF = 3 A, VGS = 0 V,di/dt = 50 A/ 2 Unit 55 Reverse Transfer Capacitance Body Diode Forward Voltage Note VDS = -20V, VGS = 0 V VGS = 4.0 V, ID = 1.5 A Coss Total Gate Charge Max 10 VGS = 4.5 V, ID = 1.5 A Output Capacitance Fall Time Typ N-Ch RDS(on)2 Ciss Turn-off Delay Time Min VDS = 20 V, VGS = 0 V RDS(on)1 Input Capacitance Rise Time Testconditons Symbol s N-Ch 70 P- Ch 24 N-Ch 12 P- Ch 1.5 pF pF pF ns ns ns ns nC nC nC V ns nC