SMD Type Product specification NDS0605 General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 0.18A DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch. -0.18A, -60V. RDS(ON) = 5Ω @ VGS = -10V. Voltage controlled p-channel small signal switch. High density cell design for low RDS(ON) . High saturation current. ___________________________________________________________________________________________ D S G Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter NDS0605 Units VDSS Drain-Source Voltage -60 V VDGR Drain-Gate Voltage (RGS < 1 MΩ) -60 V VGSS Gate-Source Voltage - Continuous ±20 V ID Drain Current - Continuous -0.18 A PD Maximum Power Dissipation - Pulsed -1 TA = 25°C Derate above 25°C TJ,TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/16" from case for 10 seconds 0.36 W 2.9 mW/oC -55 to 150 °C 300 °C 350 °C/W THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type Product specification NDS0605 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min -60 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -10 µA IDSS Zero Gate Voltage Drain Current VDS = -48 V, VGS = 0 V TJ = 125°C V -1 µA -500 µA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA -1 -3 V -0.6 -2.8 ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA TJ = 125°C RDS(ON) Static Drain-Source On-Resistance 5 VGS = -10 V, ID = -0.5 A 7.5 VGS = -4.5 V, ID = -0.25 A TJ = 125°C ID(on) gFS On-State Drain Current Forward Transconductance Ω 10 TJ = 125°C 15 VGS = -10 V, VDS = -10 V -0.6 VGS = -4.5 V, VDS = -10 V -0.25 VDS = -10 V, ID = -0.2 A 0.07 A S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz 60 pF 25 pF 5 pF SWITCHING CHARACTERISTICS (Note 1) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) tf VDD = -30 V, ID = -0.2 A, VGS = -10 V, RGEN = 25 Ω 10 nS 15 nS Turn - Off Delay Time 15 nS Turn - Off Fall Time 20 nS -0.18 A DRAIN-SOURCE DIODE CHARACTERISTICS IS Continuous Source Diode Current ISM Maximum Pulsed Source Diode Current (Note 1) VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.5 A (Note 1) -1 A -1.5 V -1.3 TJ = 125°C Note : 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2